Karl D Schuh, 61131 Molina Dr, Santa Cruz, CA 95060

7254617, Aug 7, 2007

Dec 6, 2002

10/313861

Karl Schuh - Santa Cruz CA, US
Chris Hawkinson - Fullerton CA, US
Scott Ruple - Gilbert AZ, US
Tom Volden - Newport Beach CA, US

G06F 9/00
G06F 12/00

709214, 709216, 709205, 709217, 711118, 711120, 711148

A distributed cache module that allows for a distributed cache between multiple servers of a network without using a central cache manager. The distributed cache module transmits each message with a logical timestamp. The distributed cache module of a server that receives the message will delay forwarding of the message to, for example, a client computer, if preceding timestamps are not received. This insures a correct order of timestamped messages without requiring a central manager to allocate and control the transmission of the messages within the network. Each distributed cache module will request and possibly retrieve data from the cache of another server in response to a file request for the data. The data of a file may be accessed by a plurality of servers joined in a file context.

2008018, Aug 7, 2008

Jul 28, 2007

11/829886

Karl Schuh - Santa Cruz CA, US
Chris Hawkinson - Fullerton CA, US
Scott Ruple - Gilbert AZ, US
Tom Volden - Newport Beach CA, US

G06F 15/167

709214

A distributed cache module that allows for a distributed cache between multiple servers of a network without using a central cache manager. The distributed cache module transmits each message with a logical timestamp. The distributed cache module of a server that receives the message will delay forwarding of the message to, for example, a client computer, if preceding timestamps are not received. This insures a correct order of timestamped messages without requiring a central manager to allocate and control the transmission of the messages within the network. Each distributed cache module will request and possibly retrieve data from the cache of another server in response to a file request for the data. The data of a file may be accessed by a plurality of servers joined in a file context.

2013012, May 16, 2013

Mar 30, 2012

13/436639

Karl David SCHUH - Santa Cruz CA, US
Karl Huan-Yao KO - Sunnyvale CA, US
Aloysius C. Ashley WIJEYERATNAM - Newark CA, US
Steven GASKILL - Campbell CA, US
Thad OMURA - Los Altos CA, US
Sumit PURI - Fremont CA, US
Jeremy Isaac Nathaniel WERNER - San Jose CA, US

LSI CORPORATION - Milpitas CA

G11C 29/08

714718

A Solid-State Disk (SSD) Manufacturing Self Test (MST) capability enables an SSD manufacturer to generate and load tests onto SSDs, run the tests, and gather results. The SSDs self execute the loaded tests when powered up. The self executing is while coupled to a host that loaded the tests or while coupled to a rack unable to load the tests but enabled to provide power to the SSDs. The rack is optionally cost-reduced to enable cost-efficient parallel testing of relatively larger numbers of SSDs for production. The host writes the tests to an ‘input’ SMART log of each SSD, and each SSD writes results to a respective included ‘output’ SMART log. The commands include write drive, erase drive, SATA PHY burn-in, delay, and stress mode. The SSD MST capability is optionally used in conjunction with an SSD virtual manufacturing model.

5333138, Jul 26, 1994

Mar 11, 1992

7/849740

John H. Richards - San Jose CA
Karl D. Schuh - San Jose CA

MiniStor Peripherals International Limited - San Jose CA

G06F 1100
G11B 1504

371 7

Apparatus for preventing data corruption on a disk due to mechanical shock occurring during the write process to the disk includes a mechanical shock sensor to sense mechanical shocks having a magnitude exceeding a predetermined threshold. Write disable circuitry responsive to the mechanical shock sensor interrupts the write current to the disk drive write head. Repositioning circuitry then repositions the data head over the original data track and the incomplete data that was interrupted by the mechanical shock is rewritten. A method for preventing data corruption on a disk due to mechanical shock experienced by a disk drive during the write process to the disk includes the steps of sensing a mechanical shock having a magnitude exceeding a predetermined threshold; storing information identifying the data being written at the onset of the sensed shock; interrupting the write current to the write head; repositioning the data head to the original track; and rewriting the data which was interrupted because of the sensed shock.

5367652, Nov 22, 1994

Feb 2, 1990

7/474474

Jeffrey A. Golden - Boulder Creek CA
Karl D. Schuh - Scotts Valley CA

G11B 1518
G06F 306

395499

A disc drive translation and defect management method and apparatus. The method and apparatus includes an index table to translate a host computer's logical cylinder request into an arbitrarily designated physical cylinder location in the disc drive system. Once the physical cylinder is located, the physical head and sector location is determined with a quick, relatively simple mathematical translation. If a defect is present on the indexed physical cylinder in question, the index table provides a defect flag and a pointer which points into a predetermined entry of a defect table. The selected entry in the defect table provides a defect offset value for the physical location in question. The offset value is added to the physical cylinder, head and sector location to push it into a defect-free physical location.

2022039, Dec 8, 2022

Aug 18, 2022

17/820792

- Boise ID, US
Karl Schuh - Santa Cruz CA, US
Mustafa N. Kaynak - San Diego CA, US
Xiangang Luo - Fremont CA, US
Shane Nowell - Boise ID, US
Devin Batutis - San Jose CA, US
Sivagnanam Parthasarathy - Carlsbad CA, US
Sampath Ratnam - Boise ID, US
Jiangang Wu - Milpitas CA, US
Peter Feeley - Boise ID, US

G11C 16/30
G11C 7/04
G11C 16/26
G11C 16/34
G11C 16/32
G11C 16/10

A voltage shift for memory cells of a block family at a memory device is measured. The block family is associated with a first voltage offset. An adjusted amount of voltage shift is determined for the memory cells based on the measured voltage shift and a temporary voltage shift offset associated with a difference between a current temperature and a prior temperature for the memory device. The block family is associated with a second voltage offset in view of the adjusted voltage shift.

2022038, Dec 1, 2022

Aug 8, 2022

17/883538

- Boise ID, US
Sampath K. RATNAM - Boise ID, US
Shane NOWELL - Boise ID, US
Sivagnanam PARTHASARATHY - Carlsbad CA, US
Mustafa N. KAYNAK - San Diego CA, US
Karl D. SCHUH - Santa Cruz CA, US
Peter FEELEY - Boise ID, US
Jiangang WU - Milpitas CA, US

G11C 16/10
G11C 16/20
G11C 16/32
G11C 16/30
G11C 16/26
G11C 16/34

A processing device of a memory sub-system is configured to detect a power on event that is associated with a memory device and indicates that power has been restored to the memory device; estimate a duration of a power off state preceding the power on event associated with the memory device; and update voltage bin assignments of a plurality of blocks associated with the memory device based on the duration of the power off state.

2022037, Nov 24, 2022

Aug 4, 2022

17/880980

- Boise ID, US
Shane Nowell - Boise ID, US
Mustafa N. Kaynak - San Diego CA, US
Karl D. Schuh - Santa Cruz CA, US
Jiangang Wu - Milpitas CA, US
Devin M. Batutis - San Jose CA, US
Xiangang Luo - Fremont CA, US

G11C 16/34
G06F 3/06
G06F 11/07
G11C 16/26

A system includes a memory device and a processing device. The processing device performs, at a first frequency, a first scan of a page of a block family that measures a first data state metric and identifies a specific bin corresponding to a measured value for the first data state metric. Processing device updates a bin, to which the page is assigned, to match the specific bin. Processing device performs, at a second frequency higher than the first frequency, a second scan of the page to measure a second data state metric for read operations performed using a threshold voltage offset value from each of multiple bins. Processing device updates the bin, to which the page is assigned for the specified die, to match a second bin having the threshold voltage offset value that yields a lowest read bit error rate from the second scan.