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Kaveh F Niazi, 59925 Hilldale Ave, Berkeley, CA 94708

Known as:
Kaveh Farzad Niazi Kaveh S Niazi Yaveh S Niazi
Related to:
Mansour Niazi 90 Kayvan Niazi 52 Fereshteh Niazi

Kaveh Niazi Phones & Addresses

925 Hilldale Ave, Berkeley, CA 94708    510-5271108   

Oakland, CA   

New York, NY   

Santa Clara, CA   

Duluth, MN   

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Kaveh F Niazi

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Skills

Semiconductors • Thin Films • Research • Project Management • Program Management • Analysis • Strategy • Qualitative Research • Microsoft Office • Teaching • Microsoft Excel • Business Strategy • English • Statistics • Jmp • Product Development • Cvd • Photography • Arabic • Applied Physics • Physics • Higher Education • Computer Science • Editing • Historian • Management • Science • Strategic Planning

Languages

Arabic • Persian

Interests

Christianity • Kids • Exercise • Investing • Gardening • Electronics • Home Improvement • Reading • Music • Automobiles • Family Values • Movies • Collecting • Home Decoration

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Kaveh F Niazi

Location:
925 Hilldale Ave, Berkeley, CA 94708
Industry:
Research
Skills:
Semiconductors, Thin Films, Research, Project Management, Program Management, Analysis, Strategy, Qualitative Research, Microsoft Office, Teaching, Microsoft Excel, Business Strategy, English, Statistics, Jmp, Product Development, Cvd, Photography, Arabic, Applied Physics, Physics, Higher Education, Computer Science, Editing, Historian, Management, Science, Strategic Planning
Interests:
Christianity
Kids
Exercise
Investing
Gardening
Electronics
Home Improvement
Reading
Music
Automobiles
Family Values
Movies
Collecting
Home Decoration
Languages:
Arabic
Persian

Publications & IP owners

Us Patents

High-Permeability Magnetic Shield For Improved Process Uniformity In Nonmagnetized Plasma Process Chambers

US Patent:
6447651, Sep 10, 2002
Filed:
Mar 7, 2001
Appl. No.:
09/800798
Inventors:
Tetsuya Ishikawa - Santa Clara CA
Kaveh Niazi - Santa Clara CA
Tsutomu Tanaka - Santa Clara CA
Canfeng Lai - Fremont CA
Robert Duncan - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 1435
US Classification:
2041921, 20429811, 20429816
Abstract:
A method and apparatus for forming a layer on a substrate in a process chamber during a plasma deposition process are provided. A plasma is formed in a process chamber, a process gas with precursor gases suitable for depositing the layer are flowed into the process chamber, and a magnetic field having a strength less than about 0. 5 gauss is attenuated within the process chamber. Attenuation of such a magnetic field results in an improvement in the degree of process uniformity achieved during the deposition.

Method Of Reducing Plasma Charge Damage For Plasma Processes

US Patent:
6660662, Dec 9, 2003
Filed:
Jan 26, 2001
Appl. No.:
09/771203
Inventors:
Tetsuya Ishikawa - Santa Clara CA
Alexandros T. Demos - San Ramon CA
Feng Gao - Mountain View CA
Kaveh F. Niazi - Santa Clara CA
Michio Aruga - Inba-Gun, JP
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2144
US Classification:
438787, 438680, 438681, 438788
Abstract:
A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.

Apparatus For Reducing Plasma Charge Damage For Plasma Processes

US Patent:
7036453, May 2, 2006
Filed:
Sep 8, 2003
Appl. No.:
10/658350
Inventors:
Tetsuya Ishikawa - Santa Clara CA, US
Alexandros T. Demos - San Ramon CA, US
Feng Gao - Mountain View CA, US
Kaveh F. Niazi - Santa Clara CA, US
Michio Aruga - Inba-Gun, JP
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
US Classification:
118723R, 118715, 438787, 438788
Abstract:
A method is provided for depositing a thin film on a substrate in a process chamber with reduced incidence of plasma charge damage. A process gas containing a precursor gases suitable for forming a plasma is flowed into a process chamber, and a plasma is generated from the process gas to deposit the thin film on the substrate. The precursor gases are flowed into the process chamber such that the thin film is deposited at the center of the substrate more rapidly than at an edge of the substrate.

Process Kit

US Patent:
6189483, Feb 20, 2001
Filed:
May 29, 1997
Appl. No.:
8/865567
Inventors:
Tetsuya Ishikawa - Santa Clara CA
Padmanabhan Krishnaraj - Mountainview CA
Kaveh Niazi - Santa Clara CA
Hiroji Hanawa - Sunnyvale CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 2100
US Classification:
118723E
Abstract:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Multi-Zone Rf Inductively Coupled Source Configuration

US Patent:
6083344, Jul 4, 2000
Filed:
May 29, 1997
Appl. No.:
8/865432
Inventors:
Hiroji Hanawa - Sunnyvale CA
Tetsuya Ishikawa - Santa Clara CA
Manus Wong - San Jose CA
Shijian Li - San Jose CA
Kaveh Niazi - Santa Clara CA
Kenneth Smyth - Sunnyvale CA
Fred C. Redeker - Fremont CA
Troy Detrick - Los Altos CA
Jay Dee Pinson - San Jose CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H05H 100
US Classification:
156345
Abstract:
The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Rf Plasma Source For Material Processing

US Patent:
6239553, May 29, 2001
Filed:
Apr 22, 1999
Appl. No.:
9/296934
Inventors:
Mike Barnes - San Ramon CA
Tetsuya Ishikawa - Santa Clara CA
Kaveh Niazi - Santa Clara CA
Tsutomu Tanaka - Santa Clara CA
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01J 724
H05B 3126
US Classification:
31511151
Abstract:
The present invention provides a plasma source that maintains a low coil voltage in the vicinity of the plasma tube, thereby reducing the capacitive coupling between the coil and the plasma and significantly reducing the erosion from the internal surfaces of the plasma tube. The plasma source generally comprises a coil having a first coil segment and a second coil segment, an RF power source connected to the coil and an enclosure disposed between the first coil segment and the second coil segment. The invention also provides a method for generating a plasma, comprising: disposing an enclosure between a first coil segment and a second coil segment; introducing a gas into the enclosure; and supplying an RF power to the coil segments to excite the gas into a plasma state. The invention provides a variety of coil operations, including symmetrical coil configuration, asymmetrical coil configuration with the matching networks adjusted to provide a low voltage near the plasma chamber, self-resonant configuration, grounded coil center configuration having coil segments driven in parallel and physically grounded near the plasma chamber, and pairs configurations having a plurality of coil segment pairs driven in series or parallel.

Possible Relatives

Abdul H Niazi  Ghazala I Niazi  Hamid R Niazi  Kayvan F Niazi  Kaveh A Hossein 

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