Keith K Wong7222 E Gainey Ranch Rd UNIT 128, Scottsdale, AZ 85258

6436823, Aug 20, 2002

Oct 5, 2000

09/679738

Cyril Cabral, Jr. - Ossining NY
Chung-Ping Eng - Hopewell Junction NY
Lynne Marie Gignac - Beacon NY
Christian Lavoie - Ossining NY
Patricia ONeil - Wappingers Falls NY
Kirk David Peterson - Essex Junction VT
Tina Wagner - Newburgh NY
Yun-Yu Wang - Poughquag NY
Keith Wong - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

H01L 2144

438686, 438570, 438637, 438653, 438680, 257384

A method for forming a TiN layer on top of a metal silicide layer in a semiconductor structure without the formation of a thick amorphous layer containing Ti, Co and Si and the structure formed are provided. In the method, after a Ti layer is deposited on top of a metal silidide layer, a dual-step annealing process is conducted in which a low temperature annealing in a forming gas (or ammonia) at a temperature not higher than 500Â C. is first conducted for less than 2 hours followed by a high temperature annealing in a nitrogen-containing gas (or ammonia) at a second temperature not lower than 500Â for less than 2 hours to form the TiN layer. The present invention method prevents the problem usually caused by a thick amorphous material layer of TiâSiâCo which produces weakly bonded Ti which reacts with fluorine atoms from WF during a subsequent CVD W deposition process and causes liner failure due to a volume expansion of the amorphous material. The maximum thickness of the amorphous material layer formed by the present invention method is less than 5 nm which minimizes the line failure problem.

6816061, Nov 9, 2004

Sep 15, 2000

09/663533

Keith K. Wong - Paradise Valley AZ, 85253

G08B 522

340 746, 340 759, 340 758, 340 748, 340 755, 34082529, 340 751, 340 752

A communication system ( ) uses commercial, mass market paging transmission facilities ( ) to deliver messages ( â) to a population of reception devices ( ). Each reception device ( ) includes a display screen ( ) at which lines ( ) of national and local news and advertising, a banner advertising box ( ) and a clock ( ) are displayed. Line buttons ( â) are aligned with the displayed lines ( ). The reception device ( ) is configured so that a user may press a line button ( â) aligned with a particular line ( ) scrolling on the display screen ( ) to view additional details related to the subject matter of the particular line ( ). Selected lines ( ) include alert activating codes ( ) which signal the reception device ( ), when enabled, to activate an alert which attracts the users attention to those selected lines ( ).

D505402, May 24, 2005

Oct 3, 2003

29/191243

Keith K. Wong - Paradise Valley AZ, US

1403

D14125, D14126

7144490, Dec 5, 2006

Nov 18, 2003

10/707047

Tien-Jen Cheng - Bedford NY, US
David E. Eichstadt - North Salem NY, US
Jonathan H. Griffith - Lagrangeville NY, US
Sarah H. Knickerbocker - Hopewell Junction NY, US
Rosemary A. Previti-Kelly - Burlington VT, US
Roger A. Quon - Rhinebeck NY, US
Kamalesh K. Srivastava - Wappingers Falls NY, US
Keith Kwong-Hon Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

C25D 5/02
C25D 7/12

205118, 205122, 205123, 205136, 205157

A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.

2002012, Sep 12, 2002

Jan 12, 2001

09/760240

Cyril Cabral - Ossining NY, US
Lawrence Clevenger - LaGrangeville NY, US
Louis Hsu - Fishkill NY, US
Keith Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01C001/012

338/308000, 338/307000, 338/309000

A high density resistor structure and a method for forming the structure are disclosed. The high density resistor structure can be constructed by an electrically insulative substrate; a refractory metal-silicon-nitrogen layer deposited on the top surface; and at least one resistor element patterned in the refractory metal-silicon-nitrogen layer in a plane parallel to the top surface. The method can be carried out by first providing the electrically insulative semiconductor substrate or a glass substrate, then sputter-depositing a TaSiN layer having a thickness between 200 and 2000 on top of the substrate; and then forming by a reactive ion etching technique at least one resistor element in the TaSiN film in a plane that is parallel to the top surface of the substrate.

2002013, Sep 19, 2002

Jan 12, 2001

09/760245

Cyril Cabral - Ossining NY, US
Lawrence Clevenger - LaGrangeville NY, US
Louis Hsu - Fishkill NY, US
Keith Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L029/94
H01L029/76
H01L031/062
H01L031/113

257/368000

A semiconductor structure that includes at least one circuit element of a fuse, a diffusion barrier or a capacitor that is formed by refractory metal-silicon-nitrogen is disclosed. A method for fabricating such semiconductor structure that includes a fuse element, a diffusion barrier, a resistor or a capacitor by a refractory metal-silicon-nitrogen material is further disclosed. A suitable refractory metal-silicon-nitrogen material to be used is TaSiN which provides a wide range of resistivity by changing the ratio of Ta:Si:N. The invention provides the benefit that the various components of diffusion barriers, fuses, capacitors and resistors may be formed by a single deposition process of a TaSiN layer, the various components are then selectively masked and treated by either heat-treating or ion-implantation to vary their resistivity selectively while keeping the other shielded elements at the same resistivity.

2002018, Dec 12, 2002

Jun 1, 2001

09/872603

Cyril Cabral - Ossining NY, US
Lawrence Clevenger - LaGrangeville NY, US
Louis Hsu - Fishkill NY, US
Keith Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L029/76
H01L031/062
H01L031/113

257/368000

A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to sputter deposit a first refractory metal-silicon-nitrogen layer on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. Ngas is then flown into the sputtering chamber until that the concentration of Ngas in the chamber is at least 35% to sputter deposit a second refractory metal-silicon-nitrogen layer on top of the first refractory metal-silicon-nitrogen layer. The Ngas flow is then stopped to sputter deposit a third refractory metal-silicon-nitrogen layer on top of the second refractory metal-silicon-nitrogen layer. The multi-layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into a capacitor.

2003010, Jun 12, 2003

Jan 16, 2003

10/346437

Cyril Cabral - Ossining NY, US
Lawrence Clevenger - LaGrangeville NY, US
Louis Hsu - Fishkill NY, US
Keith Wong - Wappingers Falls NY, US

International Business Machines Corporation - Armonk NY

H01L027/108
H01L029/76

257/306000

A method for forming a refractory metal-silicon-nitrogen capacitor in a semiconductor structure and the structure formed are described. In the method, a pre-processed semiconductor substrate is first positioned in a sputtering chamber. Ar gas is then flown into the sputtering chamber to sputter deposit a first refractory metal-silicon-nitrogen layer on the substrate from a refractory metal silicide target, or from two targets of a refractory metal and a silicon. Ngas is then flown into the sputtering chamber until that the concentration of Ngas in the chamber is at least 35% to sputter deposit a second refractory metal-silicon-nitrogen layer on top of the first refractory metal-silicon-nitrogen layer. The Ngas flow is then stopped to sputter deposit a third refractory metal-silicon-nitrogen layer on top of the second refractory metal-silicon-nitrogen layer. The multi-layer stack of the refractory metal-silicon-nitrogen is then photolithographically formed into a capacitor.