Kelly K Malone, 441317 Alston Ave UNIT 101, Fort Worth, TX 76104

7187081, Mar 6, 2007

Oct 31, 2003

10/699238

Elbert E. Huang - Tarrytown NY, US
Kaushik A. Kumar - Beacon NY, US
Kelly Malone - Poughkeepsie NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Muthumanickam Sankarapandian - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 29/40

257759, 257774, 438970

Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SiNCOH, where 0. 05≦v≦0. 8, 0≦w≦0. 9, 0. 05≦x≦0. 8, 0≦y≦0. 3, 0. 05≦z≦0. 8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.

7396758, Jul 8, 2008

Jan 3, 2007

11/619502

Elbert E. Huang - Tarrytown NY, US
Kaushik A. Kumar - Beacon NY, US
Kelly Malone - Poughkeepsie NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Muthumanickam Sankarapandian - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 21/4763

438623, 257E21135

Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SiNCOH, where 0. 05≦v≦0. 8, 0≦w≦0. 9, 0. 05≦x≦0. 8, 0≦y≦0. 3, 0. 05≦z≦0. 08 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.

7879717, Feb 1, 2011

Jun 17, 2008

12/140854

Elbert E. Huang - Tarrytown NY, US
Kaushik A. Kumar - Beacon NY, US
Kelly Malone - Poughkeepsie NY, US
Dirk Pfeiffer - Dobbs Ferry NY, US
Muthumanickam Sankarapandian - Yorktown Heights NY, US
Christy S. Tyberg - Mahopac NY, US

International Business Machines Corporation - Armonk NY

H01L 21/00

438637, 438970

Interconnect structures having buried etch stop layers with low dielectric constants and methods relating to the generation of such buried etch stop layers are described herein. The inventive interconnect structure comprises a buried etch stop layer comprised of a polymeric material having a composition SiNCOH, where 0. 05≦v≦0. 8, 0≦w≦0. 9, 0. 05≦x≦0. 8, 0≦y≦0. 3, 0. 05≦z≦0. 8 for v+w+x+y+z=1; a via level interlayer dielectric that is directly below said buried etch stop layer; a line level interlayer dielectric that is directly above said buried etch stop layer; and conducting metal features that traverse through said via level dielectric, said line level dielectric, and said buried etch stop layer.

8637412, Jan 28, 2014

Aug 19, 2011

13/214157

Alfred Grill - White Plains NY, US
Kelly Malone - Newburgh NY, US
Son Van Nguyen - Schenectady NY, US
Vishnubhai Vitthalbhai Patel - Yorktown Heights NY, US
Hosadurga Shobha - Niskayuna NY, US

International Business Machines Corporation - Armonk NY

H01L 21/31
H01L 21/469

438778, 257288

A first PECVD process incorporating a silicon oxide precursor alone and then with an organo-silicon precursor with increasing flow while the flow of the silicon oxide precursor is reduced to zero provides a graded carbon adhesion layer whereby the content of C increases with layer thickness and a second PECVD process incorporating an organo-silicon precursor including an organic porogen provides a multiphase ultra-low k dielectric. The multiphase ultra-low k PECVD process uses high frequency radio frequency power just above plasma initiation in a PECVD chamber. An energy post treatment is also provided. A porous SiCOH dielectric material having a k less than 2. 7 and a modulus of elasticity greater than 7 GPa is formed.