Career records & work history
Medicine Doctors
Kelvin K Chan, 49340 Santa Monica Ave, Menlo Park, CA 94025
Kelvin Chan Phones & Addresses
340 Santa Monica Ave, Menlo Park, CA 94025
411 Sherwood Way, Menlo Park, CA 94025
Atherton, CA
San Francisco, CA
Pebble Beach, CA
Moraga, CA
Mountain View, CA
Bensenville, IL
2451 23Rd Ave, San Francisco, CA 94116 415-8472516
Work
Company:
Mini-e.com
Address:
2451 23Rd Avenue - San Francisco, San Francisco, CA 94115
Phones:
415-2420844
Position:
Cfo
Industries:
Direct Mail Advertising Services
Education
Degree:
High school graduate or higher
Mentions for Kelvin K Chan
Kelvin Chan resumes & CV records
Resumes
Kelvin Chan - Albany, CA
Work:
Large, Alameda County Public Health Commission, CA Nov 2013 to 2000
Commissioner NHS Cambridgeshire Aug 2010 to Sep 2013
Principal Investigator and Independent Consultant NHS Cambridgeshire Aug 2010 to Sep 2011
Independent Consultant Bixby Center for Population Health and Sustainability - Berkeley, CA Mar 2009 to Aug 2009
Bixby Fellow Primary Care Information Project, Bureau of Health Care - New York, NY Sep 2007 to Aug 2008
Associate Staff Analyst Primary Care Information Project, Bureau of Health Care - New York, NY Jan 2008 to Jun 2008
Independent Consultant National Hemophilia Foundation - New York, NY May 2006 to Aug 2007
Manager of Research Harvard University - Cambridge, MA May 2003 to May 2006
Laboratory and Grant Administrator Centers for Behavioral and Preventive Medicine - Providence, RI May 2000 to May 2003
Clinical Research Associate
Commissioner NHS Cambridgeshire Aug 2010 to Sep 2013
Principal Investigator and Independent Consultant NHS Cambridgeshire Aug 2010 to Sep 2011
Independent Consultant Bixby Center for Population Health and Sustainability - Berkeley, CA Mar 2009 to Aug 2009
Bixby Fellow Primary Care Information Project, Bureau of Health Care - New York, NY Sep 2007 to Aug 2008
Associate Staff Analyst Primary Care Information Project, Bureau of Health Care - New York, NY Jan 2008 to Jun 2008
Independent Consultant National Hemophilia Foundation - New York, NY May 2006 to Aug 2007
Manager of Research Harvard University - Cambridge, MA May 2003 to May 2006
Laboratory and Grant Administrator Centers for Behavioral and Preventive Medicine - Providence, RI May 2000 to May 2003
Clinical Research Associate
Education:
University of Cambridge 2014
Doctor of Philosophy in Public Health and Primary Care Columbia University 2008
Master of Public Health in Management and Health Policy Harvard University 2006
Comparative World Religions Brown University 2003
Bachelor of Arts in Community Health
Doctor of Philosophy in Public Health and Primary Care Columbia University 2008
Master of Public Health in Management and Health Policy Harvard University 2006
Comparative World Religions Brown University 2003
Bachelor of Arts in Community Health
Kelvin Chan - Austin, TX
Work:
EBAY, INC 2011 to 2000
Manager, Acquisition Integration - Billing and Payments INFOSYS CONSULTING, INC - Fremont, CA 2009 to 2011
Senior Associate, High Tech Practice ROLAND BERGER STRATEGY CONSULTANTS 2008 to 2008
Senior Consultant (Internship) NETAPP, INC - Sunnyvale, CA 2004 to 2007
Manager, Program Management, NetApp Global Services CISCO SYSTEMS, INC - San Jose, CA 2002 to 2004
Project Manager, Cisco.com CISCO SYSTEMS, INC. - San Jose, CA 1999 to 2002
IT Analyst, Global Sales Training and Support
Manager, Acquisition Integration - Billing and Payments INFOSYS CONSULTING, INC - Fremont, CA 2009 to 2011
Senior Associate, High Tech Practice ROLAND BERGER STRATEGY CONSULTANTS 2008 to 2008
Senior Consultant (Internship) NETAPP, INC - Sunnyvale, CA 2004 to 2007
Manager, Program Management, NetApp Global Services CISCO SYSTEMS, INC - San Jose, CA 2002 to 2004
Project Manager, Cisco.com CISCO SYSTEMS, INC. - San Jose, CA 1999 to 2002
IT Analyst, Global Sales Training and Support
Education:
THE UNIVERSITY OF CHICAGO BOOTH SCHOOL OF BUSINESS - Chicago, IL 2007 to 2009
Master of Business Administration in Entrepreneurship, Strategic Management, and Finance UNIVERSITY OF CALIFORNIA AT BERKELEY - Berkeley, CA 1995 to 1999
Bachelor of Arts in Economics
Master of Business Administration in Entrepreneurship, Strategic Management, and Finance UNIVERSITY OF CALIFORNIA AT BERKELEY - Berkeley, CA 1995 to 1999
Bachelor of Arts in Economics
Skills:
PMP
Kelvin Chan - Bethesda, MD
Work:
Emergent BioSolutions Apr 2012 to 2000
Financial Analyst, Corporate Development & Treasury Citigroup - San Francisco, CA Jul 2010 to Apr 2012
Investment Banking Analyst, Global Healthcare Group Singapore Armed Forces Medical Corps - Singapore Apr 2004 to Jun 2006
National Service 3rd Sergeant, Chemical Defense Group
Financial Analyst, Corporate Development & Treasury Citigroup - San Francisco, CA Jul 2010 to Apr 2012
Investment Banking Analyst, Global Healthcare Group Singapore Armed Forces Medical Corps - Singapore Apr 2004 to Jun 2006
National Service 3rd Sergeant, Chemical Defense Group
Education:
University of Wisconsin - Madison, WI 2006 to 2010
BA in Finance, Molecular Biology
BA in Finance, Molecular Biology
Kelvin Chan
Work:
Sprout Labs Sep 2011 to 2000
iOS/Cocos2D Software Engineer/Partner Oracle USA Jan 2010 to 2000
Project Leader Oracle USA Jun 2008 to 2000
Senior Software Engineer Oracle Canada (and formerly Siebel Canada) - Ontario, CA Apr 2003 to Jun 2008
Senior Software Developer Siebel Systems, Inc - San Mateo, CA Jul 2001 to Mar 2003
Software Developer Chronos Asset Management - Cambridge, MA Feb 2001 to May 2001
Quantitative Hedge Fund Trader/Software Programmer Boston University Dept of Physics - Boston, MA Sep 1999 to Jun 2000
Research Assistant MIT Dept of Earth, Atmospheric, and Planetary Sciences - Cambridge, MA Jun 1996 to Jun 1999
Research Assistant/Teaching Assistant/Unix System Administrator Physics Department at Northeastern University - Boston, MA Jul 1994 to Jul 1995
Undergraduate Research Assistant Polaroid Corporation Cambridge and Waltham - Waltham, MA 1995 to 1995
Software Programmer
iOS/Cocos2D Software Engineer/Partner Oracle USA Jan 2010 to 2000
Project Leader Oracle USA Jun 2008 to 2000
Senior Software Engineer Oracle Canada (and formerly Siebel Canada) - Ontario, CA Apr 2003 to Jun 2008
Senior Software Developer Siebel Systems, Inc - San Mateo, CA Jul 2001 to Mar 2003
Software Developer Chronos Asset Management - Cambridge, MA Feb 2001 to May 2001
Quantitative Hedge Fund Trader/Software Programmer Boston University Dept of Physics - Boston, MA Sep 1999 to Jun 2000
Research Assistant MIT Dept of Earth, Atmospheric, and Planetary Sciences - Cambridge, MA Jun 1996 to Jun 1999
Research Assistant/Teaching Assistant/Unix System Administrator Physics Department at Northeastern University - Boston, MA Jul 1994 to Jul 1995
Undergraduate Research Assistant Polaroid Corporation Cambridge and Waltham - Waltham, MA 1995 to 1995
Software Programmer
Education:
MASSACHUSETTS INSTITUTE OF TECHNOLOGY Cambridge - Cambridge, MA 1999
Masters of Science in Geophysics MIT Earth 1996 to 1997
Sciences Departmental Fellowship NORTHEASTERN UNIVERSITY Boston - Boston, MA Jun 1996
Bachelor of Science in Physics/Mathematics UNIVERSITY OF TORONTO Toronto - Toronto, ON
Dept. of Computer Science
Masters of Science in Geophysics MIT Earth 1996 to 1997
Sciences Departmental Fellowship NORTHEASTERN UNIVERSITY Boston - Boston, MA Jun 1996
Bachelor of Science in Physics/Mathematics UNIVERSITY OF TORONTO Toronto - Toronto, ON
Dept. of Computer Science
Publications & IP owners
Us Patents
Method Of Improving Initiation Layer For Low-K Dielectric Film By Digital Liquid Flow Meter
US Patent:
7410916, Aug 12, 2008
Filed:
Nov 21, 2006
Appl. No.:
11/562021
Inventors:
Dustin W. Ho - Fremont CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Alexandros T. Demos - Fremont CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Alexandros T. Demos - Fremont CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/31
US Classification:
438780, 438784, 257E21271
Abstract:
A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
Method Of Improving Initiation Layer For Low-K Dielectric Film By Digital Liquid Flow Meter
US Patent:
7947611, May 24, 2011
Filed:
Jul 9, 2008
Appl. No.:
12/170248
Inventors:
Dustin W. Ho - Fremont CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Alexandros T. Demos - Fremont CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Juan Carlos Rocha-Alvarez - Sunnyvale CA, US
Alexandros T. Demos - Fremont CA, US
Kelvin Chan - Santa Clara CA, US
Nagarajan Rajagopalan - Santa Clara CA, US
Visweswaren Sivaramakrishnan - Cupertino CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/31
US Classification:
438780, 438784, 257E2124, 257E21273
Abstract:
A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection valve, vaporizing the organosilicon compound and flowing the organosilicon compound and a carrier gas into the processing chamber, maintaining the organosilicon flow rate to deposit an initiation layer, flowing a porogen compound from a bulk storage container through a digital liquid flow meter at a porogen flow rate to a vaporization injection valve, vaporizing the porogen compound and flowing the porogen compound and a carrier gas into the processing chamber, increasing the organosilicon flow rate and the porogen flow rate while depositing a transition layer, and maintaining a second organosilicon flow rate and a second porogen flow rate to deposit a porogen containing organosilicate dielectric layer.
Uv Assisted Silylation For Recovery And Pore Sealing Of Damaged Low K Films
US Patent:
8492170, Jul 23, 2013
Filed:
Apr 25, 2011
Appl. No.:
13/093351
Inventors:
Bo Xie - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US
Kang Sub Yim - Palo Alto CA, US
Thomas Nowak - Cupertino CA, US
Kelvin Chan - San Jose CA, US
Alexandros T. Demos - Fremont CA, US
Kang Sub Yim - Palo Alto CA, US
Thomas Nowak - Cupertino CA, US
Kelvin Chan - San Jose CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/30
US Classification:
438 4, 438597, 438795
Abstract:
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and silylation compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
Methods To Promote Adhesion Between Barrier Layer And Porous Low-K Film Deposited From Multiple Liquid Precursors
US Patent:
2010001, Jan 21, 2010
Filed:
Jul 15, 2008
Appl. No.:
12/173659
Inventors:
Kelvin Chan - San Jose CA, US
Kang Sub Yim - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US
Kang Sub Yim - Santa Clara CA, US
Alexandros T. Demos - Fremont CA, US
International Classification:
H01L 21/31
US Classification:
438778, 257E2124
Abstract:
A method for processing a substrate is provided, wherein a first organosilicon precursor, a second organosilicon precursor, a porogen, and an oxygen source are provided to a processing chamber. The first organosilicon precursor comprises compounds having generally low carbon content. The second organosilicon precursor comprises compounds having higher carbon content. The porogen comprises hydrocarbon compounds. RF power is applied to deposit a film on the substrate, and the flow rates of the various reactant streams are adjusted to change the carbon content as portions of the film are deposited. In one embodiment, an initial portion of the deposited film has a low carbon content, and is therefore oxide-like, while successive portions have higher carbon content, becoming oxycarbide-like. Another embodiment features no oxide-like initial portion. Post-treating the film generates pores in portions of the film having higher carbon content.
Superimposition Of Rapid Periodic And Extensive Post Multiple Substrate Uv-Ozone Clean Sequences For High Throughput And Stable Substrate To Substrate Performance
US Patent:
2010001, Jan 28, 2010
Filed:
Jul 23, 2008
Appl. No.:
12/178523
Inventors:
Sang In Yi - San Jose CA, US
Kelvin Chan - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Alexandros T. Demos - Fremont CA, US
Kelvin Chan - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Alexandros T. Demos - Fremont CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B08B 7/00
US Classification:
134 1, 134 56 R
Abstract:
A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
Superimposition Of Rapid Periodic And Extensive Post Multiple Substrate Uv-Ozone Clean Sequences For High Throughput And Stable Substrate To Substrate Performance
US Patent:
2011010, May 5, 2011
Filed:
Jan 10, 2011
Appl. No.:
12/987948
Inventors:
Sang In Yi - San Jose CA, US
Kelvin Chan - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Alexandros T. Demos - Fremont CA, US
Kelvin Chan - San Jose CA, US
Thomas Nowak - Cupertino CA, US
Alexandros T. Demos - Fremont CA, US
International Classification:
B08B 7/00
US Classification:
134 1
Abstract:
A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
Low-K Dielectric Damage Repair By Vapor-Phase Chemical Exposure
US Patent:
2014000, Jan 2, 2014
Filed:
May 28, 2013
Appl. No.:
13/903483
Inventors:
Kelvin CHAN - San Ramon CA, US
Alexandros T. DEMOS - Fremont CA, US
Alexandros T. DEMOS - Fremont CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01L 21/263
US Classification:
438798
Abstract:
A method for repairing and lowering the dielectric constant of low-k dielectric layers used in semiconductor fabrication is provided. In one implementation, a method of repairing a damaged low-k dielectric layer comprising exposing the porous low-k dielectric layer to a vinyl silane containing compound and optionally exposing the porous low-k dielectric layer to an ultraviolet (UV) cure process.
Method And Hardware For Cleaning Uv Chambers
US Patent:
2014005, Feb 27, 2014
Filed:
Aug 19, 2013
Appl. No.:
13/970176
Inventors:
Alexandros T. DEMOS - Fremont CA, US
Kelvin CHAN - San Ramon CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Scott A. HENDRICKSON - Brentwood CA, US
Abhijit KANGUDE - Santa Clara CA, US
Inna TUREVSKY - Santa Clara CA, US
Mahendra CHHABRA - San Jose CA, US
Thomas NOWAK - Cupertino CA, US
Daping YAO - Portland OR, US
Bo XIE - San Jose CA, US
Daemian RAJ - San Jacino CA, US
Kelvin CHAN - San Ramon CA, US
Juan Carlos ROCHA-ALVAREZ - San Carlos CA, US
Scott A. HENDRICKSON - Brentwood CA, US
Abhijit KANGUDE - Santa Clara CA, US
Inna TUREVSKY - Santa Clara CA, US
Mahendra CHHABRA - San Jose CA, US
Thomas NOWAK - Cupertino CA, US
Daping YAO - Portland OR, US
Bo XIE - San Jose CA, US
Daemian RAJ - San Jacino CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
B08B 7/00
US Classification:
134 11, 15634534
Abstract:
A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NFand Oto remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.
Isbn (Books And Publications)
What Practitioners Of Tcm Should Know: A Philosophical Introduction For Medical Doctors
Author:
Kelvin Chan
ISBN #:
0820477419
Interactions Between Chinese Herbal Medicinal Products And Orthodox Drugs
Author:
Kelvin Chan
ISBN #:
9057024136
The Way Forward For Chinese Medicine
Author:
Kelvin Chan
ISBN #:
9058232158
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