Kenneth J Radigan DeceasedFremont, CA
Kenneth Radigan Phones & Addresses
Fremont, CA
16220 Redwood Lodge Rd, Los Gatos, CA 95033
Mountain View, CA
Santa Clara, CA
Mentions for Kenneth J Radigan
Publications & IP owners
Us Patents
Tri-Level Resist Process For Fine Resolution Photolithography
US Patent:
4732841, Mar 22, 1988
Filed:
Mar 24, 1986
Appl. No.:
6/843340
Inventors:
Kenneth J. Radigan - Los Gatos CA
Assignee:
Fairchild Semiconductor Corporation - Cupertino CA
International Classification:
G03F 726
US Classification:
430311
Abstract:
A multilayer photoresist system for defining very small features on a semiconductor substrate relies on forming a planarization layer directly over the substrate. An image transfer layer is formed over the planarization layer, and a photoresist imaging layer formed over the image transfer layer. The image transfer layer comprises an organic or inorganic resin which has been cured in a non-oxidated plasma. It has been found that such a curing technique provides a particularly smooth and defect-free image transfer layer. Very thin photoresist imaging layers may thus be formed over the image transfer layer, allowing very high lithographic resolution in the imaging layer. The resulting high resolution openings may then be transferred downward to the image transfer layer and planarization layer by etching, allowing the formation of very small geometries on the substrate surface.
Corrosion Inhibition Of Aluminum Or Aluminum Alloy Film Utilizing Bromine-Containing Plasma
US Patent:
4351696, Sep 28, 1982
Filed:
Oct 28, 1981
Appl. No.:
6/315693
Inventors:
Kenneth J. Radigan - Mountain View CA
Assignee:
Fairchild Camera & Instrument Corp. - Mountain View CA
International Classification:
H01L 21306
US Classification:
156643
Abstract:
Bromine-containing plasma is utilized to inhibit corrosion of aluminum or aluminum alloy films which have been etched utilizing a chlorinated plasma.
Process For Patterning Metal Connections On A Semiconductor Structure By Using A Tungsten-Titanium Etch Resistant Layer
US Patent:
4267012, May 12, 1981
Filed:
Apr 30, 1979
Appl. No.:
6/034781
Inventors:
John M. Pierce - Palo Alto CA
William I. Lehrer - Los Altos CA
Kenneth J. Radigan - Mountain View CA
William I. Lehrer - Los Altos CA
Kenneth J. Radigan - Mountain View CA
Assignee:
Fairchild Camera & Instrument Corp. - Mountain View CA
International Classification:
H01L 21283
H01L 21308
H01L 21308
US Classification:
156643
Abstract:
A process for patterning regions on a semiconductor structure comprises the steps of forming a first layer of an alloy of tungsten and titanium on the semiconductor structure, forming a conductive layer of aluminum or chemically similar material on the surface of the tungsten-titanium alloy, removing the undesired portions of the conductive layer by etching with a plasma and removing the thereby exposed portions of the tungsten-titanium alloy layer by chemical etching.
Method Of Etching Refractory Metal Film On Semiconductor Structures Utilizing Triethylamine And H.sub.2 O.sub.2
US Patent:
4443295, Apr 17, 1984
Filed:
Jun 13, 1983
Appl. No.:
6/503976
Inventors:
Kenneth J. Radigan - Mountain View CA
James M. Cleeves - Redwood City CA
James M. Cleeves - Redwood City CA
Assignee:
Fairchild Camera & Instrument Corp. - Mountain View CA
International Classification:
H01L 21308
US Classification:
156657
Abstract:
A method is disclosed of etching a refractory metal layer on a semiconductor structure comprising subjecting it to a mixture of a Lewis base and an oxidizing agent. In the preferred embodiment a method is described for etching a tungsten-titanium layer on a semiconductor structure by immersing it in a mixture of triethylamine and hydrogen peroxide.
NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.