BackgroundCheck.run
Search For

Kent J Cooper, 649407 Scenic Bluff Dr, Austin, TX 78733

Known as:
Kent Jeffrey Cooper Kentrey J Cooper Cooper J Kent
Related to:
Ross G Cooper 34 Cedric D Cooper 44 Tracy W Cooper 52 Tressa A Cooper 46 Sally Cooper 36 Kenyatta P Cooper 52 Sheila K Cooper 64

Kent Cooper Phones & Addresses

9407 Scenic Bluff Dr, Austin, TX 78733    512-9702336   

Indian Harbour Beach, FL   

Los Angeles, CA   

9407 Scenic Bluff Dr, Austin, TX 78733    512-7712269   

Work

Company: Capstone properties Address: Po Box 320945, Cocoa Beach, FL 32932 Industries: Real Estate Agents and Managers

Education

Degree: Doctor of Jurisprudence/Juris Doctor (J.D.) School / High School: University of Texas School of Law

Ranks

Licence: Texas - Eligible To Practice In Texas Date: 1997

Emails

k***[email protected]
Get Report
Control this profile

Mentions for Kent J Cooper

Career records & work history

Lawyers & Attorneys

Kent Cooper Photo 1

Kent Jeffrey Cooper - Lawyer

Address:
Law Office of Kent J. Cooper
512-8528091 (Office)
Licenses:
Texas - Eligible To Practice In Texas 1997
Education:
University of Texas School of LawDegree Doctor of Jurisprudence/Juris Doctor (J.D.)Graduated 1997
Specialties:
Intellectual Property - 100%
Kent Cooper Photo 2

Kent Jeffrey Cooper, Austin TX - Lawyer

Address:
5204 E Ben White Blvd, Austin, TX 78741
Phone:
512-6023451 (Phone)
Experience:
27 years
Specialties:
Intellectual Property
Jurisdiction:
Texas (1997)
Law School:
University Of Texas
Education:
University Of Texas, JD
Memberships:
Texas State Bar (1997)

Medicine Doctors

Kent J. Cooper

Specialties:
Family Medicine, Obstetrics & Gynecology
Work:
Kent J Cooper MD
2401 S Tucker Ave STE 2, Pittsburg, KS 66762
620-2316280 (phone) 620-2316342 (fax)
Education:
Medical School
University of Kansas School of Medicine
Graduated: 1973
Procedures:
Arthrocentesis, Cesarean Section (C-Section), Circumcision, Vaccine Administration, Vaginal Delivery
Conditions:
Acute Upper Respiratory Tract Infections, Anxiety Phobic Disorders, Attention Deficit Disorder (ADD), Pneumonia, Abdominal Hernia, Abnormal Vaginal Bleeding, Acne, Acute Bronchitis, Acute Conjunctivitis, Acute Otitis Externa, Acute Pancreatitis, Acute Pharyngitis, Acute Renal Failure, Acute Sinusitis, Allergic Rhinitis, Alopecia Areata, Anemia, Anorexia Nervosa, Atopic Dermatitis, Atrial Fibrillation and Atrial Flutter, Bell's Palsy, Benign Neoplasm of Breast, Benign Prostatic Hypertrophy, Breast Disorders, Bronchial Asthma, Candidiasis, Cirrhosis, Complicating Pregnancy or Childbirth, Conditions of Pregnancy and Delivery, Constipation, Contact Dermatitis, Dehydration, Dermatitis, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Epilepsy, Erectile Dysfunction (ED), Fractures, Dislocations, Derangement, and Sprains, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Gout, Hearing Loss, Hemorrhoids, Hypertension (HTN), Hyperthyroidism, Hypothyroidism, Infectious Mononucleosis, Inguinal Hernia, Intervertebral Disc Degeneration, Irritable Bowel Syndrome (IBS), Keratitis, Labyrinthitis, Lateral Epicondylitis, Menopausal and Postmenopausal Disorders, Migraine Headache, Obstructive Sleep Apnea, Osteoarthritis, Otitis Media, Overweight and Obesity, Parkinson's Disease, Peptic Ulcer Disease, Peripheral Nerve Disorders, Plantar Fascitis, Plantar Warts, Poisoning by Drugs, Meds, or Biological Substances, Premenstrual Syndrome (PMS), Psoriasis, Restless Leg Syndrome, Rotator Cuff Syndrome and Allied Disorders, Sciatica, Sexually Transmitted Diseases (STDs), Skin and Subcutaneous Infections, Spinal Stenosis, Tension Headache, Thyroiditis, Tinea Unguium, Undescended and Retractile Testicle, Varicose Veins, Venous Embolism and Thrombosis, Viral Pneumonia
Languages:
English, Spanish
Description:
Dr. Cooper graduated from the University of Kansas School of Medicine in 1973. He works in Pittsburg, KS and specializes in Family Medicine and Obstetrics & Gynecology. Dr. Cooper is affiliated with Via Christi Hospital Of Pittsburgh.

License Records

Kent Lee Cooper

Licenses:
License #: 12396 - Expired
Category: Emergency Medical Care
Issued Date: Dec 31, 1997
Effective Date: Jul 15, 1999
Expiration Date: Dec 31, 2000
Type: EMT

Kent P Cooper

Phone:
941-6566754
Licenses:
License #: 266 - Expired
Category: Health Care
Issued Date: Jun 12, 1992
Effective Date: Feb 22, 2006
Expiration Date: Jan 31, 2004
Type: Limited License Medical Doctor

Kent Cooper resumes & CV records

Resumes

Kent Cooper Photo 53

Owner At Cooper & Company, Inc.

Position:
Owner at Cooper & Company, Inc
Location:
Los Gatos, California
Industry:
Real Estate
Work:
Cooper & Company, Inc - 718 University Avenue, Suite 217, Los Gatos, CA 95032 since Feb 1990
Owner Cunningham Asociates Mar 1986 - Feb 1990
Salesman
Education:
Santa Clara University 1983 - 1985
Bachelor of Science, Sociology West Valley College 1981 - 1982
Associate of Arts, General Studies
Skills:
Real Estate, Property Management, Negotiation, Microsoft Office, Contract Negotiation, Real Estate Development, Investment Properties, Commercial Real Estate
Interests:
Baseball, Outdoors, Real Estate Investing, Family, Technology,
Kent Cooper Photo 54

Director Of Patents & Licensing At Advanced Micro Devices

Position:
Director of Patents & Licensing at Advanced Micro Devices
Location:
Austin, Texas Area
Industry:
Semiconductors
Work:
Advanced Micro Devices since Jun 2002
Director of Patents & Licensing Motorola 1997 - 2002
Patent Attorney Motorola 1993 - 1997
Patent Agent Motorola 1989 - 1993
Process Engineer
Education:
Colorado State University
MS, Chemical Engineering Dartmouth College
BA, Engineering Science The University of Texas at Austin
JD, Intellectual Property
Kent Cooper Photo 55

Owner At Law Office Of Kent J. Cooper

Position:
Owner at Law Office of Kent J. Cooper
Location:
Austin, Texas Area
Industry:
Law Practice
Work:
Law Office of Kent J. Cooper since Nov 2012
Owner F&B, LLP Mar 2009 - Oct 2012
Partner Advanced Micro Devices Jun 2002 - Feb 2009
Director of Patents & Licensing Motorola Semiconductor Nov 1997 - Jun 2002
Patent Attorney
Education:
Dartmouth College 1978 - 1982
BA, Engineering Sciences Colorado State University
MS, Chemical Engineering The University of Texas School of Law
JD, Intellectual Property
Kent Cooper Photo 56

Kent Cooper

Location:
United States
Kent Cooper Photo 57

Kent Cooper

Location:
United States
Kent Cooper Photo 58

President At Capstone Properties

Location:
Melbourne, Florida Area
Industry:
Commercial Real Estate
Kent Cooper Photo 59

Kent Cooper

Location:
United States

Publications & IP owners

Us Patents

In Situ Water And Soil Remediation Method And System

US Patent:
6502633, Jan 7, 2003
Filed:
Mar 26, 2001
Appl. No.:
09/817803
Inventors:
Kent Cooper - Merritt Island FL, 32953
James Carey - Viera FL, 32940
Robert J. Crim - Melbourne FL, 32940
International Classification:
A62D 300
US Classification:
166245, 1661775, 166271, 166370, 210747, 210908, 210909, 4051283, 4051285, 4051294
Abstract:
The remediation treatment creates environmentally neutral species from hydrocarbon contaminants. For soils having a low porosity, fissures are created in the site by, for example, fluid, i. e. , hydraulic or pneumatic, fracturing. A catalyst is injected into the site and is permitted to diffuse through the site. An oxidizing agent is then introduced into the site to release a free radical in a Fenton-type reaction. The compounds react to release a free radical, which acts upon the contaminants to form environmentally neutral species. Diffusion of both compounds is aided by turbulence induced in the groundwater. A pH-adjusting compound is added to optimize reaction conditions. Reaction vapors are collected above ground, filtered, and vented to the atmosphere, reducing the chance for gas pressure buildup and possibly dangerous, potentially explosive conditions.

Self-Aligned Under-Gated Thin Film Transistor And Method Of Formation

US Patent:
5158898, Oct 27, 1992
Filed:
Nov 19, 1991
Appl. No.:
7/794279
Inventors:
James D. Hayden - Austin TX
Kent J. Cooper - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 21265
H01L 21465
US Classification:
437 21
Abstract:
A self-aligned, under-gated TFT device (10). A base layer (14) is formed. A conductive layer (16) is formed overlying the base layer (14). A dielectric layer (18) is formed overlying the conductive layer (16). A sacrificial layer (20) is formed overlying the dielectric layer (18). The layers (16, 18, and 20) are etched to form a "pillar" region. A dielectric layer (22) and a planar layer (24), which both overlie the "pillar" region, are etched back to form a substantially planar surface and expose a top portion of the sacrificial layer (20). The sacrificial layer (20) is removed and a conductive layer (28) is formed overlying conductive region (16) and planar layer (22). Conductive layer (28) is used to form a self-aligned TFT device (10) via the formation of a source region (33) and a drain region (34) adjacent an aligned plug region (32).

Contact Structure And Method Of Formation

US Patent:
6285073, Sep 4, 2001
Filed:
May 30, 1995
Appl. No.:
8/453689
Inventors:
Kent J. Cooper - Austin TX
Scott S. Roth - Austin TX
International Classification:
H01L 2906
US Classification:
257648
Abstract:
The horizontal surface area required to contact semiconductor devices, in integrated circuits fabricated with trench isolation, is minimized without degrading contact resistance by utilizing the vertical surface area of the trench sidewall. A trench isolation region (40) is formed within the semiconductor substrate (12). A doped region (74, 96) is then formed such that it abuts the trench sidewall (24). A portion (56, 110) of the trench sidewall (24), abutting the doped region (74, 96), is then exposed by forming a recess (55, 112) within the trench isolation region (40). A conductive member (66, 114, 118) is then formed such that it is electrically coupled to the doped region (74, 96) along the exposed trench sidewall, as well as along the major surface (13) of the semiconductor substrate (12), and results in the formation of a low resistance contact structure.

Self-Aligned Thin Film Transistor

US Patent:
5308997, May 3, 1994
Filed:
Jun 22, 1992
Appl. No.:
7/902216
Inventors:
Kent J. Cooper - Austin TX
Scott S. Roth - Austin TX
James D. Hayden - Austin TX
Howard C. Kirsch - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 2904
H01L 31036
H01L 2701
US Classification:
257 57
Abstract:
A thin film transistor with self-aligned source and drain regions is fabricated, in one embodiment, by forming an opening (124) in a dielectric layer (118) which overlies a substrate (116). A semiconductive sidewall spacer (130) is formed around the perimeter (126) of the opening (124) and adjacent to the sidewall (128) of the opening (124). A first electrode region (120) is electrically coupled to a first portion of the semiconductive sidewall spacer (130) at a first location along the perimeter (126) of the opening (124) which lies only in the second lateral half of the opening (124). A second electrode region (122) is electrically coupled to a second portion of the semiconductive sidewall spacer (130) at a second location along the perimeter (126) of the opening (124) which lies only in the first lateral half of the opening (124). A dielectric layer (132) is formed adjacent to the semiconductive sidewall spacer (130). A control electrode (134) is formed adjacent to the dielectric layer (132).

Process Forming An Integrated Circuit

US Patent:
5377139, Dec 27, 1994
Filed:
Dec 11, 1992
Appl. No.:
7/990341
Inventors:
Craig S. Lage - Austin TX
Frank K. Baker - Austin TX
James D. Hayden - Austin TX
Kent J. Cooper - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G11C 1300
US Classification:
365154
Abstract:
The present invention includes an integrated circuit having a self-aligned contact that makes contact to both a region within the substrate and a capacitor plate of a capacitor that is adjacent to the doped region. The present invention also includes a static-random-access memory cell with a capacitor having a first plate and a second plate. The first plate includes a first plate section of a gate electrode of a transistor, and the second plate includes a first conductive member that is substantially coincident with the first plate section. The second plate may be formed over a gate electrode of a latch transistor or over a word line. The disclosure includes methods of forming the integrated circuit and the static-random-access memory cell.

Memory Cell Having A Plural Transistor Transmission Gate And Method Of Formation

US Patent:
5898619, Apr 27, 1999
Filed:
May 16, 1994
Appl. No.:
8/242993
Inventors:
Ko-Min Chang - Austin TX
Bruce L. Morton - Austin TX
Clinton C. K. Kuo - Austin TX
Keith E. Witek - Austin TX
Kent J. Cooper - Austin TX
International Classification:
G11C 1604
G11C 1122
G11C 1124
US Classification:
36518523
Abstract:
A memory circuit and method of formation uses a transmission gate (24) as a select gate. The transmission gate (24) contains a transistor (30) which is an N-channel transistor and a transistor (28) which is a P-channel transistor. The transistors (28 and 30) are electrically connected in parallel. The use of the transmission gate (24) as a select gate allows reads and writes to occur to a memory cell storage device (i. e. a capacitor (32), a floating gate (22), etc. ) without a significant voltage drop occurring across the transmission gate. In addition, EEPROM technology is more compatible with EPROM/flash technology when using a transmission gate as a select gate within EEPROM devices.

Itldd Transistor Having Variable Work Function And Method For Fabricating The Same

US Patent:
5061647, Oct 29, 1991
Filed:
Oct 12, 1990
Appl. No.:
7/597946
Inventors:
Scott S. Roth - Austin TX
Carlos A. Mazure - Austin TX
Kent J. Cooper - Austin TX
Wayne J. Ray - Austin TX
Michael P. Woo - Austin TX
Jung-Hui Lin - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
H01L 21265
US Classification:
437 40
Abstract:
A semiconductor device and process wherein an ITLDD device (60) is formed having an inverse-T (IT) transistor gate with a variable work function (. PHI. ) across the gate. The variable work function is attained by depositing a work function adjusting layer onto the thin gate extensions of the IT-gate. In accordance with one embodiment of the invention, a semiconductor substrate (10) of a first conductivity type is provided having a gate dielectric layer (12) formed thereon. First and second lightly doped regions (36, 37) of a second conductivity type are formed in the substrate which are spaced apart by a channel region (38). An IT-gate electrode (48) is formed on the gate dielectric layer overlying the first and second lightly doped regions and the channel region. The IT-gate has a relatively thick central section (32) and relatively thin lateral extensions (50) projecting from the central portion along the gate dielectric layer. A work function adjusting layer (46) overlies and is in intimate contact with at least the lateral extensions of the IT-gate.

Static-Random-Access Memory Cell And An Integrated Circuit Having A Static-Random-Access Memory Cell

US Patent:
5485420, Jan 16, 1996
Filed:
Jul 21, 1994
Appl. No.:
8/278465
Inventors:
Craig S. Lage - Austin TX
Frank K. Baker - Austin TX
James D. Hayden - Austin TX
Kent J. Cooper - Austin TX
Assignee:
Motorola, Inc. - Schaumburg IL
International Classification:
G11C 1100
US Classification:
365154
Abstract:
The present invention includes an integrated circuit having a self-aligned contact that makes contact to both a region within the substrate and a capacitor plate of a capacitor that is adjacent to the doped region. The present invention also includes a static-random-access memory cell with a capacitor having a first plate and a second plate. The first plate includes a first plate section of a gate electrode of a transistor, and the second plate includes a first conductive member that is substantially coincident with the first plate section. The second plate may be formed over a gate electrode of a latch transistor or over a word line. The disclosure includes methods of forming the integrated circuit and the static-random-access memory cell.

Isbn (Books And Publications)

Barriers Down: The Story Of The News Agency Epoch

Author:
Kent Cooper
ISBN #:
0804606897

Sonny Terry'S Country Blues Harmonica

Author:
Kent Cooper
ISBN #:
0825601665

Possible Relatives

Cynthia C Cooper  David R Cooper  Cyrus W Cooper  Davy H Cooper  Dawn A Cooper  Dawson J Cooper  Dayna L Cooper  Kent D Johnson  Kent M Johnston  Kent A Stanford 

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.