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Kimberly S Reid, 58Goodells, MI

Known as:
Kimberly S Gelb Kimberly Suzanne Turner Kimberly S Turner Kimberly R Eid Kim Gelb Veronika Gelb

Kimberly Reid Phones & Addresses

Wales, MI   

Mount Morris, MI   

Meridian, ID   

Castle Rock, CO   

Kuna, ID   

Boise, ID   

Essex Junction, VT   

Williston, VT   

Berkley, MI   

Petaluma, CA   

Clinton Township, MI   

Redford, MI   

South Burlington, VT   

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Resumes

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Registered Nurse

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Registered Nurse
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Kimberly Reid

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Kimberly Reid

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Residential Services Specialist

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Residential Services Specialist
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Kimberly Reid

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Kimberly Reid

Location:
United States
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Kimberly Reid

Location:
United States

Publications & IP owners

Us Patents

Correlated Electron Device Formed Via Conversion Of Conductive Substrate To A Correlated Electron Region

US Patent:
2019019, Jun 27, 2019
Filed:
Feb 25, 2019
Appl. No.:
16/284932
Inventors:
- Cambridge, GB
Jolanta Bozena Celinska - Colorado Springs CO, US
Christopher Randolph McWilliams - Colorado Springs CO, US
Lucian Shifren - San Jose CA, US
Kimberly Gay Reid - Austin TX, US
International Classification:
H01L 45/00
Abstract:
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Switching Device Formed From Correlated Electron Material

US Patent:
2019015, May 23, 2019
Filed:
Jan 28, 2019
Appl. No.:
16/259917
Inventors:
- Cambridge, GB
Jolanta Bozena Celinska - Colorado Springs CO, US
Kimberly Gay Reid - Austin TX, US
Lucian Shifren - San Jose CA, US
International Classification:
H01L 45/00
H01L 27/24
Abstract:
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Cem Switching Device

US Patent:
2019005, Feb 21, 2019
Filed:
Oct 24, 2018
Appl. No.:
16/169114
Inventors:
- Cambridge, GB
Jolanta Bozena CELINSKA - Colorado Springs CO, US
Kimberly Gay REID - Austin TX, US
Lucian SHIFREN - San Jose CA, US
Assignee:
Arm Limited - Cambridge
International Classification:
H01L 45/00
C23C 14/00
C23C 16/50
C23C 16/455
C23C 14/16
Abstract:
Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

Correlated Electron Device Formed Via Conversion Of Conductive Substrate To A Correlated Electron Region

US Patent:
2018015, Jun 7, 2018
Filed:
Dec 7, 2016
Appl. No.:
15/371457
Inventors:
- Cambridge, GB, GB
Jolanta Bozena Celinska - Colorado Springs CO, US
Christopher Randolph McWilliams - Colorado Springs CO, US
Lucian Shifren - San Jose CA, US
Kimberly Gay Reid - Austin TX, US
International Classification:
H01L 45/00
Abstract:
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, processes are described in which a correlated electron material film may be formed over a conductive substrate by converting at least a portion of the conductive substrate to CEM.

Switching Device Formed From Correlated Electron Material

US Patent:
2018015, Jun 7, 2018
Filed:
Dec 1, 2016
Appl. No.:
15/367052
Inventors:
- Cambridge, GB
Jolanta Bozena Celinska - Colorado Springs CO, US
Kimberly Gay Reid - Austin TX, US
Lucian Shifren - San Jose CA, US
International Classification:
H01L 45/00
Abstract:
Subject matter disclosed herein may relate to fabrication of a correlated electron material (CEM) switch. In embodiments, processes are described in which conductive traces may be formed on or over an insulating material. Responsive to forming voids in the insulating material, localized portions of the conductive traces in contact with the voids may be exposed to gaseous oxidizing agents, which may convert the localized portions of the conductive traces to a CEM. In embodiments, an electrode material may be deposited within the voids to contact the localized portion of conductive trace converted to the CEM.

Cem Switching Device

US Patent:
2018015, May 31, 2018
Filed:
Nov 29, 2016
Appl. No.:
15/363216
Inventors:
- Cambridge, GB
Jolanta Bozena CELINSKA - Colorado Springs CO, US
Kimberly Gay REID - Austin TX, US
Lucian SHIFREN - San Jose CA, US
Assignee:
ARM Limited - Cambridge
International Classification:
H01L 45/00
C23C 14/00
C23C 14/16
C23C 16/455
C23C 16/50
Abstract:
Subject matter herein disclosed relates to an improved CEM switching device and methods for its manufacture. In this device, a conductive substrate and/or conductive overlay comprises a primary layer of a conductive material and a secondary layer of a conductive material. The primary layer contacting the CEM layer is substantially inert to the CEM layer and/or acts as an oxygen barrier for the secondary layer at temperatures used for the manufacture of the device.

Fabrication And Operation Of Correlated Electron Material Devices

US Patent:
2017021, Jul 27, 2017
Filed:
Dec 20, 2016
Appl. No.:
15/385719
Inventors:
- Cambridge, GB
Jolanta Bozena Celinska - Colorado Springs CO, US
Kimberly Gay Reid - Austin TX, US
Lucian Shifren - San Jose CA, US
International Classification:
H01L 45/00
G11C 11/56
Abstract:
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may comprise a dominant ligand and a substitutional ligand, which may permit electron donation and back-donation in a correlated electron material. Electron donation and back-donation may enable the correlated electron material to exhibit a transition from high impedance/insulative state to a low impedance conductive state.

Possible Relatives

David L Reid  Daisy E Reid  Deborah Reid  Dana R Reid  Daniel S Reid  Aaron L Reid  Deena Reid  Kimberly A Johnson  Kimberly A Stamps  Kimberly A Standish 

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