Kirk Lindahl resumes & CV records
Resumes
Kirk A Lindahl DeceasedSteamboat Springs, CO
Kirk Lindahl Phones & Addresses
Steamboat Springs, CO
6183 Highland Farms Cir, Fort Collins, CO 80528 970-2049830
3407 Peachstone Pl, Fort Collins, CO 80525
Social networks
Kirk A Lindahl
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Work
Position:
Service Occupations
Education
Degree:
Associate degree or higher
Mentions for Kirk A Lindahl
Publications & IP owners
Us Patents
Method For Fabricating Low Leakage Interconnect Layers In Integrated Circuits
US Patent:
2007002, Jan 25, 2007
Filed:
Sep 22, 2006
Appl. No.:
11/525428
Inventors:
Chintamani Palsule - Fort Collins CO, US
Jay Meyer - Fort Collins CO, US
John Stanback - Fort Collins CO, US
Jeremy Theil - Mountain View CA, US
Mark Crook - Fort Collins CO, US
Kirk Lindahl - Louisville CO, US
Jay Meyer - Fort Collins CO, US
John Stanback - Fort Collins CO, US
Jeremy Theil - Mountain View CA, US
Mark Crook - Fort Collins CO, US
Kirk Lindahl - Louisville CO, US
International Classification:
H01L 21/4763
US Classification:
438636000
Abstract:
A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.
Method For Fabricating Low Leakage Interconnect Layers In Integrated Circuits
US Patent:
2006009, May 11, 2006
Filed:
Nov 9, 2004
Appl. No.:
10/984701
Inventors:
Chintamani Palsule - Fort Collins CO, US
Jay Meyer - Fort Collins CO, US
John Stanback - Fort Collins CO, US
Jeremy Theil - Mountain View CA, US
Mark Crook - Fort Collins CO, US
Kirk Lindahl - Louisville CO, US
Jay Meyer - Fort Collins CO, US
John Stanback - Fort Collins CO, US
Jeremy Theil - Mountain View CA, US
Mark Crook - Fort Collins CO, US
Kirk Lindahl - Louisville CO, US
International Classification:
H01L 21/4763
US Classification:
438636000
Abstract:
A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.
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