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Krishna Rao Linga, 5813 Blossom Hill Dr, Plainsboro, NJ 08536

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13 Blossom Hill Dr, Plainsboro, NJ 08536    609-7500991   

Coconut Creek, FL   

Monmouth Junction, NJ   

Harrison, NJ   

Rex, GA   

Newark, DE   

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Krishna Linga

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Us Patents

Diamond Based Blue/Uv Emission Source

US Patent:
7023024, Apr 4, 2006
Filed:
Mar 31, 2004
Appl. No.:
10/814710
Inventors:
Krishna Linga - Plainsboro NJ, US
Ranjit Pandher - Dover DE, US
Assignee:
Inphot, Inc. - Plainsboro NJ
International Classification:
H01L 33/00
US Classification:
257101, 257 14, 257 94, 257103
Abstract:
A diamond based Blue/UV light emitting source is disclosed. The source includes a diamond substrate having a first conductivity type, a first aluminum gallium nitride layer above the diamond substrate having the same conductivity type as the substrate, a bulk or a quantum well structure on the AlGaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second AlGaN layer on the quantum well or the bulk active layer having the opposite conductivity type as the first AlGaN layer, a contact structure on the second AlGaN layer having the opposite conductivity type from the substrate and the first AlGaN layer, an ohmic contact to the diamond substrate, and an ohmic contact to the contact structure.

Low-Level Signal Detection By Semiconductor Avalanche Amplification

US Patent:
8441032, May 14, 2013
Filed:
Jun 28, 2010
Appl. No.:
12/825255
Inventors:
Krishna Linga - Plainsboro NJ, US
Assignee:
Amplification Technologies, Inc. - Brooklyn NY
International Classification:
H01L 31/107
US Classification:
257186, 257199, 257438, 257589, 257603, 438 58, 438 48, 438 57, 438154
Abstract:
A system and method providing for the detection of an input signal, either optical or electrical, by using a single independent discrete amplifier or by distributing the input signal into independent signal components that are independently amplified. The input signal can either be the result of photoabsorption process in the wavelengths greater than 950 nm or a low-level electrical signal. The discrete amplifier is an avalanche amplifier operable in a non-gated mode while biased in or above the breakdown region, and includes a composite dielectric feedback layer monolithically integrated with input signal detection and amplification semiconductor layers.

Coating For Optical Fibers And Method Therefor

US Patent:
2002005, May 2, 2002
Filed:
Oct 9, 2001
Appl. No.:
09/973513
Inventors:
Bawa Singh - Voorhees NJ, US
Nalin Kumar - Moorestown NJ, US
Vipulkumar Patel - South Brunswick NJ, US
Krishna Linga - Plainsboro NJ, US
Ali Ouali - Upper Darby PA, US
International Classification:
G02B006/22
US Classification:
385/128000, 427/163200
Abstract:
An improved coating for optical fibers and a method for applying the improved coating are described. The present invention is a dimensionally precise and uniform coating with low-porosity. The improved coating is applied via sputtering within a vacuum chamber. Environmental conditions are monitored within a cylindrical magnetron during sputtering. Sputtering is adjusted or temporarily ceased when environmental conditions approach a damage threshold. Sputtered particles within a plasma cloud are dimensionally similar and adhere to an optical fiber in a volume efficient arrangement forming a more precise, denser, and more adherent coating. Embodiments of the present invention provide improved pull strength by compressively constraining the optical fiber within the coating and by closing microcracks.

Coating For Optical Fibers

US Patent:
2004007, Apr 22, 2004
Filed:
May 22, 2003
Appl. No.:
10/444904
Inventors:
Bawa Singh - Voorhees NJ, US
Nalin Kumar - Moorestown NJ, US
Vipulkumar Patel - South Brunswick NJ, US
Krishna Linga - Plainsboro NJ, US
Ali Ouali - Upper Darby PA, US
International Classification:
G02B006/22
US Classification:
385/128000
Abstract:
An improved coating for optical fibers is described. The present invention is a dimensionally precise and uniform coating with low-porosity. The improved coating is applied via sputtering within a vacuum chamber. Environmental conditions are monitored within a cylindrical magnetron during sputtering. Sputtering is adjusted or temporarily ceased when environmental conditions approach a damage threshold. Sputtered particles within a plasma cloud are dimensionally similar and adhere to an optical fiber in a volume efficient arrangement forming a more precise, denser, and more adherent coating. Embodiments of the present invention provide improved pull strength by compressively constraining the optical fiber within the coating and by closing microcracks.

Low Leakage Current Photodetector Arrays

US Patent:
5387796, Feb 7, 1995
Filed:
May 26, 1993
Appl. No.:
8/068446
Inventors:
Abhay M. Joshi - Plainsboro NJ
Krishna R. Linga - Harrison NJ
Assignee:
Epitaxx, Inc. - West Trenton NJ
International Classification:
H01L 21365
H01L 21477
US Classification:
25037012
Abstract:
Leakage current in InGaAs/InAsP/InP lattice mismatched photodetectors can be reduced by providing graded InAsP compositions having abrupt interfaces between successive layers that maintain a lattice mismatch between the layers of 0. 13% or less; doping the absorption layer with high levels of sulfur and by thermal cycling of the wafers. High yields of low leakage current photodetector arrays are obtained.

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