BackgroundCheck.run
Search For

Kristen L Dorsey, 40North Hampton, MA

Kristen Dorsey Phones & Addresses

Northampton, MA   

San Diego, CA   

Pittsburgh, PA   

118 Graymoor Ln, Olympia Flds, IL 60461    708-2830247   

Olympia Fields, IL   

Cambridge, MA   

Roslindale, MA   

Portland, OR   

Flossmoor, IL   

Needham, MA   

Social networks

Kristen L Dorsey

Linkedin

Work

Company: Smith college Jul 2015 Position: Assistant professor of engineering

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Carnegie Mellon University 2008 to 2013 Specialities: Computer Engineering, Philosophy

Skills

Python • Matlab • Characterization • Latex • Labview • Research • Solidworks • Simulations

Industries

Higher Education

Mentions for Kristen L Dorsey

Kristen Dorsey resumes & CV records

Resumes

Kristen Dorsey Photo 28

Assistant Professor Of Engineering

Location:
100 Elm St, Northampton, MA 01063
Industry:
Higher Education
Work:
Smith College
Assistant Professor of Engineering
University of California, San Diego Jul 2014 - Jun 2015
President's Postdoctoral Fellow
Uc Berkeley Sep 2013 - Jul 2014
Uc Berkeley Chancellor's Postdoctoral Fellow
Carnegie Mellon University 2008 - Aug 2013
Graduate Research Assistant
Education:
Carnegie Mellon University 2008 - 2013
Doctorates, Doctor of Philosophy, Computer Engineering, Philosophy
Franklin W. Olin College of Engineering 2003 - 2007
Bachelors, Bachelor of Science, Computer Engineering
Skills:
Python, Matlab, Characterization, Latex, Labview, Research, Solidworks, Simulations

Publications & IP owners

Us Patents

Mems Devices Utilizing A Thick Metal Layer Of An Interconnect Metal Film Stack

US Patent:
2015014, May 28, 2015
Filed:
Aug 23, 2013
Appl. No.:
14/127536
Inventors:
Rashed Mahameed - Beaverton OR, US
Kristen L. Dorsey - Pittsburgh PA, US
Mamdouh O. M M Abdelmejeed - Alexandria, EG
International Classification:
B81B 3/00
B81C 1/00
US Classification:
257415, 438 50
Abstract:
A MEMS device, such as an accelerometer or gyroscope, fabricated in interconnect metallization compatible with a CMOS microelectronic device. In embodiments, a proof mass has a first body region utilizing a thick metal layer that is separated from a thin metal layer. The thick metal layer has a film thickness that is significantly greater than that of the thin metal layer for increased mass. The proof mass further includes a first sensing structure comprising the thin metal layer, but lacking the thick metal layer for small feature sizes and increased capacitive coupling to a surrounding fame that includes a second sensing structure comprising the thin metal layer, but also lacking the thick metal layer. In further embodiments, the frame is released and includes regions with the thick metal layer to better match film stress-induced static deflection of the proof mass.

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.