Kuen C Chow, 804899 Coyote Wells Cir, Westlake Village, CA 91362

4523067, Jun 11, 1985

Apr 9, 1982

6/366901

Roger H. Brown - Burbank CA
Kuen Chow - Thousand Oaks CA
Norman W. Goodwin - Encino CA
Jan Grinberg - Los Angeles CA

Hughes Aircraft Company - El Segundo CA

H05B 610

219 1049R

An apparatus is provided for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets such as aluminum migrate through a semiconductor wafer such as silicon to create conductive paths. One surface of the wafer is placed directly on a heating surface to establish a high and uniform thermal gradient through the wafer. Heat in the wafer is removed from the other wafer surface. The apparatus for fabricating semiconductor devices utilizing temperature gradient zone melting comprises a base, heating means and heat sink means. Heating means comprises a platform having a generally planar heating surface adapted to receive the entire area of the one surface of at least one wafer. The heat sink means is spaced away from the other wafer surface to form a space therebetween, the space being adapted to receive a high heat conductive gas. The heat sink means and the gas cooperatively remove the heat in the wafer to enhance the establishment of the thermal gradient.

4239347, Dec 16, 1980

May 29, 1979

6/043077

Paul O. Braatz - Canoga Park CA
Kuen Chow - Thousand Oaks CA
Jan Grinberg - Los Angeles CA

Hughes Aircraft Company - Culver City CA

G02F 1135

350336

A liquid crystal light valve having an improved counterelectrode structure. The light valve includes a layer of liquid crystal material which lies intermediate a photosensitive substrate of intrinsic semiconductive material and the counterelectrode. The upper surface of the substrate is characterized by a highly doped peripheral channel stop. The counterelectrode comprises electrically insulated inner and outer regions, the inner region substantially overlying only the intrinsic material interior said highly doped peripheral channel stop so that an electrical bias may be selectively applied, greatly enhancing the dark current breakdown voltage of the device.

4467340, Aug 21, 1984

Nov 16, 1981

6/321360

Jonathan P. Rode - Thousand Oaks CA
Kuen Chow - Thousand Oaks CA

Rockwell International Corporation - El Segundo CA

H01L 2978
H01L 2714
H01L 3100
H01L 2956

357 24

Disclosed is a hybrid Schottky barrier focal plane, which includes a transparent semiconducting detector substrate of a first conductivity, with an array of detector groups disposed on the detector substrate, each group including a plurality of Schottky barrier detectors. An output contact is provided on the detector substrate for each of the detector groups. A field effect transistor for each detector includes a source region of a second conductivity type in the detector substrate and connected to the detector, a drain region of the second conductivity type in the detector substrate over the source and drain regions for controlling the connection between the source region and the drain region. An array of output contacts are disposed on a semiconducting multiplexer substrate, which also includes a charge coupled circuit for converting parallel signals from the input contacts to a serial output signal. An array of coupling elements is provided to connect each of the output contacts on the detector substrate to one of the input contacts on the multiplexer substrate.

4398974, Aug 16, 1983

Apr 9, 1982

6/366900

Kuen Chow - Thousand Oaks CA
Jan Grinberg - Los Angeles CA

Hughes Aircraft Company - El Sequndo CA

H01L 21228

148171

A process is provided for fabricating a semiconductor device by thermal gradient zone melting, whereby metal-rich droplets such as aluminum migrate through a semiconductor wafer such as silicon to create conductive paths. One surface of the wafer in provided with a buffer layer thereon, which is placed directly on a heating surface. The buffer layer terminates the migration of the droplets to prevent alloying of the droplets with the heating surface.

4275410, Jun 23, 1981

Nov 29, 1978

5/964547

Jan Grinberg - Los Angeles CA
Alexander D. Jacobson - Los Angeles CA
Kuen Chow - Thousand Oaks CA

Hughes Aircraft Company - Culver City CA

H01L 2348

357 68

A large scale parallel architecture in which many parallel channels numbering 10. sup. 2 or more operate simultaneously to create a natural and efficient organization for processing two-dimensional arrays of data. The architecture comprises a plurality of stack integrated circuit wafers having top and bottom surfaces, electric signal paths extending through each of the wafers between the surfaces, and micro-interconnects (smaller than 50 mil) on the surfaces of adjacent wafers interconnecting the respective eletric signal paths with a topographical one-to-one correspondence.