Larry J Mosley, 65Chandler, AZ

6532143, Mar 11, 2003

Dec 29, 2000

09/751612

David G. Figueroa - Mesa AZ
Kishore K. Chakravorty - San Jose CA
Huong T. Do - Scottsdale AZ
Larry Eugene Mosley - Sunnyvale CA
Jorge Pedro Rodriguez - Chandler AZ
Ken Brown - Mesa AZ

Intel Corporation - Santa Clara CA

H01G 430

3613014, 3613063, 361303, 361387, 361718, 257296, 257297

A capacitor includes multiple tiers ( , FIGS. ), which provide capacitance to a load at different inductance values. Each tier includes multiple layers ( , FIGS. ) of patterned conductive material, which are separated by layers of dielectric material. In one embodiment, tiers are stacked in a vertical direction, and are electrically connected through vias ( , FIGS. ) that extend through some or all of the tiers. In another embodiment, one or more tiers ( , FIG. ) are located in a center region ( , FIG. ) of the capacitor, and one or more other tiers ( , FIG. ) are located in a peripheral region ( , FIG. ) of the capacitor. In that embodiment, the center tiers and peripheral tiers are electrically connected through one or more additional layers ( , FIG. ) of patterned conductive material. The capacitors of the various embodiments can be used as discrete devices, which are mountable on or embeddable within a housing (e. g.

7099139, Aug 29, 2006

Mar 17, 2004

10/803789

Cengiz A. Palanduz - Chandler AZ, US
Larry E. Mosley - Santa Clara CA, US

Intel Corporation - Santa Clara CA

H01G 4/228

3613062, 361302, 361303, 361305, 3613211, 3613212

A base structure is formed from a green material having first and second opposing sides and having a plurality of via openings therein. The green material is then sintered so that the green material becomes a sintered ceramic material and the base structure becomes a sintered ceramic base structure having the via openings. A conductive via is formed in each via opening of the sintered ceramic base structure. First and second capacitor structures are formed on the sintered ceramic base structure, each on a respective side of the sintered ceramic base structure. The power and ground planes of the capacitor structure are connected to the vias. As such, a capacitor structure can be formed and connected to the vias without the need to drill via openings in brittle substrates such as silicon substrates. Capacitor structures on opposing sides provide more capacitance without manufacturing complexities associated with the manufacture of one capacitor structure having a large number of power and ground planes.

7173804, Feb 6, 2007

Sep 28, 2004

10/952968

Kaladhar Radhakrishnan - Chandler AZ, US
Larry E. Mosley - Santa Clara CA, US
Dustin P. Wood - Chandler AZ, US
Nicholas L. Holmberg - Gilbert AZ, US

Intel Corporation - Santa Clara CA

H01G 4/228

3613061, 361329

An apparatus having a first set of contacts on a first side of the apparatus adapted to interface with a corresponding plurality of contacts on an integrated circuit package. The apparatus further includes a second set of contacts on a second side of the apparatus adapted to interface with a corresponding plurality of grid array leads, and a plurality of capacitive storage structures coupled to the first and second sets of contacts.

7216406, May 15, 2007

Sep 29, 2004

10/954644

Cengiz A. Palanduz - Chandler AZ, US
Larry E. Mosley - Santa Clara CA, US

Intel Corporation - Santa Clara CA

H04R 17/00
H01G 4/06

29 2535, 29 2541, 29 2542, 29830, 29831, 29832, 3613212, 3613061

A method for forming a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit such as a microprocessor, that may need a closely coupled capacitor supplying and moderating power to the microprocessor in order to quickly respond to instantaneous power demands that may be found in high clock rate devices. The method may supply a lower voltage power supply level for minimum sized transistors in the fast core logic portions of the microprocessor, and a higher voltage power supply level for the cache memory and I/O transistors.

7586756, Sep 8, 2009

Aug 8, 2006

11/463130

Cengiz A. Palanduz - Chandler AZ, US
Larry E. Mosley - Santa Clara CA, US

Intel Corporation - Santa Clara CA

H05K 1/11
H05K 1/14

361792, 361760, 361765, 361785

An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted. The microprocessor may use a lower voltage power supply level for minimum sized fast transistors in the fast core logic portions of the microprocessor, and a more normal voltage power supply voltage level for the cache memory and I/O transistor portions of the microprocessor. Thus a compact capacitor with multiple power and reference supply levels may be needed to provide the required power for a high frequency IC.

7810234, Oct 12, 2010

Apr 10, 2007

11/733266

Cengiz A. Palanduz - Chandler AZ, US
Larry E. Mosley - Santa Clara CA, US

Intel Corporation - Santa Clara CA

H05K 3/30
H01G 4/28

29832, 29 2535, 29 2541, 29830, 29831, 3613061

An apparatus, and a method for forming, a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits, may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted. The microprocessor may use a lower voltage power supply level for minimum sized fast transistors in the fast core logic portions of the microprocessor, and a more normal voltage power supply voltage level for the cache memory and I/O transistor portions of the microprocessor. Thus a compact capacitor with multiple power and reference supply levels may be needed to provide the required power for a high frequency IC.

7986532, Jul 26, 2011

Jul 27, 2009

12/509666

Cengiz A. Palanduz - Chandler AZ, US
Larry E. Mosley - Santa Clara CA, US

Intel Corporation - Santa Clara CA

H05K 1/11
H05K 1/14

361792, 3613063, 361763, 361766

An apparatus includes a split thin film capacitor for providing multiple power and reference supply voltage levels to electrical devices such as integrated circuits. Such capacitor may be useful in space restricted applications, and in applications that require very close electrical connections between the power consumer and the power supply. An example of both a space restricted application and a close coupling application may be an integrated circuit (IC) such as a microprocessor. The capacitor supplying and moderating power to the microprocessor needs to be closely coupled in order to respond to instantaneous power demands that may be found in high clock rate microprocessors, and the space inside a microprocessor package is very restricted. The microprocessor may use a lower voltage power supply level for minimum sized fast transistors in the fast core logic portions of the microprocessor, and a more normal voltage power supply voltage level for the cache memory and I/0 transistor portions of the microprocessor. Thus a compact capacitor with multiple power and reference supply levels may be needed to provide the required power for a high frequency IC.

5537656, Jul 16, 1996

Jun 17, 1994

8/261456

Thomas J. Mozdzen - Gilbert AZ
Larry E. Mosley - Phoenix AZ

Intel Corporation - Santa Clara CA

G06F 1300

395750

A method and apparatus for placing a microprocessor in and out of a reduced power consumption state utilizing system interrupts in a computer system. The method of the present invention intercepts instructions being executed by the processor before placing the processor in a reduced power consumption state. On a request for the processor to exit the reduced power consumption state, the method of the present inventions allows the processor to execute pre-determined resume instructions to wait out any voltage level fluctuations in the processor as it exits the reduced power consumption state, before allowing the processor to continue execution of the instructions intercepted prior to placing the processor in the reduced power consumption state.