Lawrence C Gunn, 511385 Hymettus Ave, Encinitas, CA 92024

7298939, Nov 20, 2007

Mar 16, 2005

11/083705

Roman Malendevich - Oceanside CA, US
Myles Sussman - San Mateo CA, US
Lawrence C. Gunn III - Encinitas CA, US

Luxtera, Inc. - Carlsbad CA

G02B 6/28
H01L 27/15

385 31, 257 82

This application describes, among others, wafer designs, testing systems and techniques for wafer-level optical testing by coupling probe light to/from the top of a wafer. A wafer level test system uses optical and electronic probes to search for and align with an optoelectronic alignment structure. The test system uses a located optoelectronic alignment structure as a reference point to locate other devices on the wafer. The system tests the operation of selected devices disposed on the wafer. The optoelectronic alignment loop is also used as an alignment reference of known performance for an adjacent device of unknown performance.

7315679, Jan 1, 2008

Jun 7, 2005

11/146940

Michael J. Hochberg - Pasadena CA, US
Chris I. Walker - Pasadena CA, US
Jeremy Witzens - Pasadena CA, US
Lawrence C. Gunn - Altadena CA, US
Axel Scherer - Laguna Beach CA, US

California Institute of Technology - Pasadena CA

G02B 6/10

385129

Various embodiment comprise silicon-on-insulator waveguide designs that simultaneously achieve both high optical confinement, low-loss, and provide for electrical connections. In certain embodiments, high index contrast waveguides comprise a central elongate waveguide portion and a segmented portion comprising a single thin layer of Silicon-On-Insulator that achieves both high optical confinement and minimal insertion loss. Other devices, such as chemical and biological sensors, and optical elements may also be fabricated.

8577191, Nov 5, 2013

Mar 16, 2012

13/422695

Peter De Dobbelaere - San Diego CA, US
Thierry Pinguet - Vashon WA, US
Mark Peterson - San Diego CA, US
Mark Harrison - Escondido CA, US
Alexander G. Dickinson - Laguna Beach CA, US
Lawrence C. Gunn - Encinitas CA, US

Luxtera Inc. - Carlsbad CA

G02B 6/12
G02B 6/26
H05K 1/18

385 14, 385 15, 385 31, 361767

A transceiver comprising a CMOS chip and a plurality of semiconductor lasers coupled with the CMOS chip may be operable to communicate optical source signals from the plurality of semiconductor lasers into the CMOS chip. The source signals may be used to generate first optical signals that may be transmitted from the CMOS chip to optical fibers. Second optical signals may be received from the optical fibers and converted to electrical signals for use by the CMOS chip. The optical source signals may be communicated from the semiconductor lasers into the CMOS chip via optical fibers in to a top surface and the first optical signals may be communicated out of a top surface of the CMOS chip. The first optical signals may be communicated from the CMOS chip via optical couplers, which may comprise grating couplers.

2003005, Mar 27, 2003

Sep 9, 2002

10/241284

Lawrence Gunn - Altadena CA, US
Axel Scherer - Laguna Beach CA, US

G02B006/10

385/130000

A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.

2003006, Apr 3, 2003

Sep 9, 2002

10/241285

Lawrence Gunn - Altadena CA, US
Axel Scherer - Laguna Beach CA, US

G02B006/10

385/131000, 385/141000

A strip loaded waveguide comprises a slab and a strip, wherein the strip is separated from the slab. Nevertheless, a guiding region is provided for propagating an optical mode and this guiding region extends both within the strip and the slab. A layer of material having an index of refraction lower than that of the strip and the slab may be disposed between and separate the strip and the slab. In one embodiment, the slab comprises a crystalline silicon, the strip comprises polysilicon or crystalline silicon, and the layer of material therebetween comprises silicon dioxide. Such waveguides may be formed on the same substrate with transistors. These waveguides may also be electrically biased to alter the index of refraction and/or absorption of the waveguide.

2003006, Apr 10, 2003

Sep 10, 2002

10/242313

Lawrence Gunn - Altadena CA, US

G02B006/26
G02F001/035
G02B006/35

385/040000, 385/050000, 385/002000, 385/016000

The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.

2003006, Apr 10, 2003

Sep 10, 2002

10/242314

Lawrence Gunn - Altadena CA, US

G02B006/26

385/040000, 385/039000, 385/015000, 385/050000

The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalities including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.

2003006, Apr 10, 2003

Sep 10, 2002

10/242318

Lawrence Gunn - Altadena CA, US

G02B006/26

385/050000, 385/015000, 385/039000, 385/040000

The index of refraction of waveguide structures can be varied by altering carrier concentration. The waveguides preferably comprise semiconductors like silicon that are substantially optically transmissive at certain wavelengths. Variation of the carrier density in these semiconductors may be effectuated by inducing an electric field within the semiconductor for example by apply a voltage to electrodes associated with the semiconductor. Variable control of the index of refraction may be used to implement a variety of functionalites including, but not limited to, tunable waveguide gratings and resonant cavities, switchable couplers, modulators, and optical switches.