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Lawrence WongSan Francisco, CA

Related to:
Russell W Wong 74 Grace Wong 65 Ming Shen Wong 82

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San Francisco, CA   

Mountain View, CA   

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Lawyers & Attorneys

Lawrence Wong Photo 1

Lawrence Wong, Oakland CA - Lawyer

Address:
413 3Rd St, Oakland, CA 94607
510-4512124 (Office)
Licenses:
California - Active 1978
Education:
University of California - Berkeley
University of California, Hastings College of the Law
Lawrence Wong Photo 2

Lawrence Wong, Oakland CA - Lawyer

Address:
413 3Rd St, Oakland, CA 94607
Phone:
510-4512124 (Phone), 510-4512448 (Fax)
Experience:
47 years
Specialties:
Personal Injury, Workers' Compensation, Car Accidents
Jurisdiction:
California (1978)
Law School:
UC Hastings COL
Education:
Univ of California Berkeley, Undergraduate Degree
UC Hastings COL, Law Degree
Memberships:
California State Bar (1978)

Medicine Doctors

Lawrence Wong Photo 3

Dr. Lawrence B Wong, Los Angeles CA - MD (Doctor of Medicine)

Specialties:
Cardiology
Address:
LAC + USC MEDICAL CENTER
1200 N State St, Los Angeles, CA 90033
323-2666667 (Phone)
Palo Alto Medical Foundation
701 E El Camino Real, Mountain View, CA 94040
650-9347000 (Phone)
Certifications:
Cardiovascular Disease, 1989
Internal Medicine, 1987
Awards:
Healthgrades Honor Roll
Languages:
English
Hospitals:
LAC + USC MEDICAL CENTER
1200 N State St, Los Angeles, CA 90033
Palo Alto Medical Foundation
701 E El Camino Real, Mountain View, CA 94040
El Camino Hospital
2500 Grant Road, Mountain View, CA 94040
Education:
Medical School
University of Southern California / Keck School of Medicine
Graduated: 1984
Medical School
Santa Clara Valley Medical Center
Graduated: 1984
Medical School
University Of California-Los Angeles
Graduated: 1984

Lawrence D. Wong

Specialties:
Family Medicine
Work:
Bengs & Wong Mds
2910 Jefferson St STE 100, Carlsbad, CA 92008
760-7298600 (phone) 760-7291499 (fax)
Education:
Medical School
Baylor College of Medicine
Graduated: 1990
Procedures:
Allergen Immunotherapy, Arthrocentesis, Destruction of Benign/Premalignant Skin Lesions, Electrocardiogram (EKG or ECG), Hearing Evaluation, Pulmonary Function Tests, Vaccine Administration
Conditions:
Abdominal Hernia, Abnormal Vaginal Bleeding, Acne, Acute Bronchitis, Acute Pharyngitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Alopecia Areata, Anal Fissure, Anemia, Anxiety Phobic Disorders, Atrial Fibrillation and Atrial Flutter, Attention Deficit Disorder (ADD), Bell's Palsy, Benign Polyps of the Colon, Benign Prostatic Hypertrophy, Bipolar Disorder, Bronchial Asthma, Burns, Calculus of the Urinary System, Carpel Tunnel Syndrome, Chronic Bronchitis, Chronic Renal Disease, Chronic Sinusitis, Constipation, Contact Dermatitis, Dehydration, Depressive Disorders, Dermatitis, Diabetes Mellitus (DM), Diabetic Peripheral Neuropathy, Disorders of Lipoid Metabolism, Epilepsy, Erectile Dysfunction (ED), Fractures, Dislocations, Derangement, and Sprains, Gastritis and Duodenitis, Gastroesophageal Reflux Disease (GERD), Gastrointestinal Hemorrhage, Gout, Hallux Valgus, Hearing Loss, Heart Failure, Hemolytic Anemia, Hemorrhoids, Herpes Genitalis, Herpes Simplex, Herpes Zoster, Hypertension (HTN), Hyperthyroidism, Hypothyroidism, Infectious Mononucleosis, Inflammatory Bowel Disease (IBD), Inguinal Hernia, Intervertebral Disc Degeneration, Irritable Bowel Syndrome (IBS), Lateral Epicondylitis, Macular Degeneration, Malignant Neoplasm of Female Breast, Menopausal and Postmenopausal Disorders, Migraine Headache, Non-Toxic Goiter, Osteoarthritis, Osteoporosis, Otitis Media, Overweight and Obesity, Parkinson's Disease, Peptic Ulcer Disease, Peripheral Nerve Disorders, Phlebitis and Thrombophlebitis, Plantar Fascitis, Plantar Warts, Pneumonia, Prostatitis, Psoriasis, Raynaud's Disease, Rosacea, Sciatica, Skin and Subcutaneous Infections, Spinal Stenosis, Substance Abuse and/or Dependency, Tempromandibular Joint Disorders (TMJ), Tinea Unguium, Transient Cerebral Ischemia, Undescended and Retractile Testicle, Urinary Incontinence, Varicose Veins, Venous Embolism and Thrombosis
Languages:
English, Spanish
Description:
Dr. Wong graduated from the Baylor College of Medicine in 1990. He works in Carlsbad, CA and specializes in Family Medicine. Dr. Wong is affiliated with Tri-City Medical Center.

Lawrence K. Wong

Specialties:
Nephrology
Work:
Tampa Renal Physicians PL
12662 Telecom Dr, Tampa, FL 33637
813-9108708 (phone) 855-8527153 (fax)
Site
Education:
Medical School
Wayne State University School of Medicine
Graduated: 2002
Procedures:
Dialysis Procedures
Conditions:
Acute Glomerulonephritis, Acute Renal Failure, Anemia, Calculus of the Urinary System, Cardiac Arrhythmia, Cardiomyopathy, Chronic Renal Disease, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Epilepsy, Gout, Heart Failure, HIV Infection, Hypertension (HTN), Infectious Liver Disease, Ischemic Heart Disease, Nephrotic Syndrome, Osteoarthritis, Overweight and Obesity, Peptic Ulcer Disease, Pneumonia, Septicemia, Systemic Lupus Erythematosus, Venous Embolism and Thrombosis, Vitamin D Deficiency
Languages:
English, Spanish
Description:
Dr. Wong graduated from the Wayne State University School of Medicine in 2002. He works in Temple Terrace, FL and specializes in Nephrology. Dr. Wong is affiliated with Saint Josephs Womens Hospital and St Josephs Hospital.

Lawrence S. Wong

Specialties:
Ophthalmology
Work:
Eyes Of Texas Laser Center
4019 Spicewood Spg Rd STE 100, Austin, TX 78759
512-3455030 (phone) 512-3455048 (fax)
Education:
Medical School
Baylor College of Medicine
Graduated: 1989
Procedures:
Lens and Cataract Procedures, Corneal Surgery
Conditions:
Cataract, Acute Conjunctivitis, Glaucoma, Keratitis, Macular Degeneration
Languages:
Chinese, English, Spanish
Description:
Dr. Wong graduated from the Baylor College of Medicine in 1989. He works in Austin, TX and specializes in Ophthalmology. Dr. Wong is affiliated with Saint Davids Medical Center.

Lawrence W. Wong

Specialties:
Family Medicine
Work:
Lawrence Y W Wong MD
3705 Waialae Ave STE 207, Honolulu, HI 96816
808-7322555 (phone)
Education:
Medical School
University of Michigan Medical School
Graduated: 1958
Conditions:
Acute Bronchitis, Acute Sinusitis, Acute Upper Respiratory Tract Infections, Allergic Rhinitis, Bronchial Asthma, Contact Dermatitis, Diabetes Mellitus (DM), Disorders of Lipoid Metabolism, Gastroesophageal Reflux Disease (GERD), Gout, Hypertension (HTN), Hypothyroidism
Languages:
Chinese, English
Description:
Dr. Wong graduated from the University of Michigan Medical School in 1958. He works in Honolulu, HI and specializes in Family Medicine. Dr. Wong is affiliated with Kapiolani Medical Center For Women & Children and Queens Medical Center.

Lawrence M. Wong

Specialties:
Anatomic Pathology & Clinical Pathology
Work:
Pathology Consultants Of South Broward
3600 Washington St FL 3, Hollywood, FL 33021
954-2652333 (phone) 954-9656472 (fax)
Education:
Medical School
Columbia University College of Physicians and Surgeons
Graduated: 1987
Languages:
English
Description:
Dr. Wong graduated from the Columbia University College of Physicians and Surgeons in 1987. He works in Hollywood, FL and specializes in Anatomic Pathology & Clinical Pathology. Dr. Wong is affiliated with Memorial Regional Hospital and Memorial Regional Hospital South.
Lawrence Wong Photo 4

Lawrence Y W Wong

Specialties:
Family Medicine
General Practice
Education:
University of Michigan Medical School (1958)
Lawrence Wong Photo 5

Lawrence Brandon Wong, Mountain View CA

Specialties:
Internal Medicine
Cardiovascular Disease
Cardiology
General Practice
Thoracic Surgery
Cardiothoracic Vascular Surgery
Work:
Palo Alto Medical Foundation - Mountain View Center
701 E El Camino Real, Mountain View, CA 94040
Education:
University of Southern California(1984)

License Records

Lawrence P Wong Jr

Licenses:
License #: 4707 - Expired
Category: Dentistry
Issued Date: Oct 2, 1978
Effective Date: Apr 10, 1989
Type: Dentist

Lawrence Wong resumes & CV records

Resumes

Lawrence Wong Photo 51

Lawrence Wong - San Francisco, CA

Work:
Minted. Feb 2014 to 2000
Merchandise Design Associate Minted. - Oakland, CA Oct 2013 to Feb 2014
Design Associate GDP May 2013 to Feb 2014
Lead Graphic Designer Stella Luna Oct 2011 to Nov 2011
Freelance Graphic Designer E-Web Print Nov 2009 to Oct 2011
Media Development OnCard International
Lead Graphic Designer
Education:
University of California - Riverside, CA Jun 2008
B.A. in Marketing California College of the Arts Sep 2002 to Jun 2005
Graphic Design
Lawrence Wong Photo 52

Lawrence Wong - San Jose, CA

Work:
APPLIED MATERIALS Jun 2006 to Present
Electrical Engineer UNITED MICROELECTRONICS CORPORATION - Sunnyvale, CA Sep 2005 to Jun 2006
Field Application Engineer PHILIPS SEMICONDUCTORS Jun 2003 to Mar 2004
ASIC Verification
Education:
SAN JOSE STATE UNIVERSITY - San Jose, CA Jun 2005
Masters of Science in Electrical Engineering UNIVERSITY OF CALIFORNIA AT SANTA BARBARA - Santa Barbara, CA Jun 2002
Bachelors of Science in Electrical Engineering
Skills:
C, Python, Matlab Simulink, LabView, Verilog, Altium Designer, Cadence OrCAD, Design with embedded systems (Xilinx, Altera) and microcontrollers (Atmel AVR, ARM Cortex, PIC32).

Publications & IP owners

Us Patents

Stabilization Of Low Dielectric Constant Film With In Situ Capping Layer

US Patent:
6566757, May 20, 2003
Filed:
Mar 1, 2000
Appl. No.:
09/516650
Inventors:
Indrajit Banerjee - San Jose CA
Lawrence D. Wong - Beaverton OR
Marnie L. Harker - Campbell CA
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2348
US Classification:
257758, 257759, 257760
Abstract:
An interconnect structure for microelectronic devices includes interconnect lines having dielectric material disposed therebetween as an intralayer dielectric, and a capping structure, also disposed between the interconnect lines, that reduces outgassing from the material. Typical embodiments include fluorinated dielectric materials, such as amorphous fluorinated carbon. The capping structure also acts as a moisture barrier to prevent moisture from penetrating into the fluorinated material and combining therewith to produce corrosive chemicals. The capping structure is formed in-situ so that the fluorinated dielectric material is not exposed to moisture prior to the formation of the capping structure.

Plasma Induced Depletion Of Fluorine From Surfaces Of Fluorinated Low-K Dielectric Materials

US Patent:
6593650, Jul 15, 2003
Filed:
Jan 15, 2002
Appl. No.:
10/050463
Inventors:
Steven Towle - Sunnyvale CA
Ebrahim Andideh - Portland OR
Lawrence D. Wong - Beaverton OR
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 2312
US Classification:
257701, 257758, 257760
Abstract:
A low dielectric constant material having a first fluorine concentration in a near-surface portion and a second fluorine concentration in an interior portion provides an insulator suitable for use in integrated circuits. In a further aspect of the present invention, fluorine is depleted from a near-surface portion of a fluorine containing dielectric material by a reducing plasma. Fluorine in fluorinated low-k dielectric materials, such as SiOF, amorphous fluorinated carbon (a-F:C) and parylene-AF4, can react with surrounding materials such as metals and Si N , causing blisters and delamination. Treatment of these fluorinated low-k dielectric materials in a reducing plasma, which may be produced from precursor gases such as H or NH , depletes the surface region of fluorine and hence reduces reaction with surrounding materials and F outgassing. By selecting an appropriate point in the integration flow, specific interfaces which are most susceptible to F-attack can be targeted for depletion.

Plasma Induced Depletion Of Fluorine From Surfaces Of Fluorinated Low-K Dielectric Materials

US Patent:
6846737, Jan 25, 2005
Filed:
Aug 15, 2000
Appl. No.:
09/639625
Inventors:
Steven Towle - Sunnyvale CA, US
Ebrahim Andideh - Portland OR, US
Lawrence D. Wong - Beaverton OR, US
Assignee:
Intel Corporation - Santa Clara CA
International Classification:
H01L 214763
US Classification:
438622, 438626, 438634
Abstract:
A low dielectric constant material having a first fluorine concentration in a near-surface portion and a second fluorine concentration in an interior portion provides an insulator suitable for use in integrated circuits. In a further aspect of the present invention, fluorine is depleted from a near-surface portion of a fluorine containing dielectric material by a reducing plasma. Fluorine in fluorinated low-k dielectric materials, such as SiOF, amorphous fluorinated carbon (a-F:C) and parylene-AF4, can react with surrounding materials such as metals and SiN, causing blisters and delamination. Treatment of these fluorinated low-k dielectric materials in a reducing plasma, which may be produced from precursor gases such as Hor NH, depletes the surface region of fluorine and hence reduces reaction with surrounding materials and F outgassing. By selecting an appropriate point in the integration flow, specific interfaces which are most susceptible to F-attack can be targeted for depletion.

Improving Plasma Process Uniformity Across A Wafer By Apportioning Power Among Plural Vhf Sources

US Patent:
7879731, Feb 1, 2011
Filed:
Apr 11, 2007
Appl. No.:
11/733764
Inventors:
Kenneth S. Collins - San Jose CA, US
Hiroji Hanawa - Sunnyvale CA, US
Kartik Ramaswamy - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Kallol Bera - San Jose CA, US
Lawrence Wong - Fremont CA, US
Walter R. Merry - Sunnyvale CA, US
Matthew L. Miller - Fremont CA, US
Steven C. Shannon - San Mateo CA, US
Andrew Nguyen - San Jose CA, US
James P. Cruse - Soquel CA, US
James Carducci - Sunnyvale CA, US
Troy S. Detrick - Los Altos CA, US
Subhash Deshmukh - San Jose CA, US
Jennifer Y. Sun - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438714, 438 8, 438706, 15634548
Abstract:
A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f and f to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f is sufficiently high to produce a center-high non-uniform plasma ion distribution and f is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f frequency to the RF parameter at the f frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.

Plasma Process Uniformity Across A Wafer By Apportioning Ground Return Path Impedances Among Plural Vhf Sources

US Patent:
7884025, Feb 8, 2011
Filed:
Apr 11, 2007
Appl. No.:
11/733767
Inventors:
Kenneth S. Collins - San Jose CA, US
Hiroji Hanawa - Sunnyvale CA, US
Kartik Ramaswamy - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Kallol Bera - San Jose CA, US
Lawrence Wong - Fremont CA, US
Walter R. Merry - Sunnyvale CA, US
Matthew L. Miller - Fremont CA, US
Steven C. Shannon - San Mateo CA, US
Andrew Nguyen - San Jose CA, US
James P. Cruse - Soquel CA, US
James Carducci - Sunnyvale CA, US
Troy S. Detrick - Los Altos CA, US
Subhash Deshmukh - San Jose CA, US
Jennifer Y. Sun - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438714, 438 8, 438706, 438710, 15634548
Abstract:
In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f and f are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f is sufficiently high to produce a center-high non-uniform plasma ion distribution and f is sufficiently low to produce a center-low non-uniform plasma ion distribution. Respective center ground return paths are provided for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequencies f and f, and an edge ground return path is provided for each of the frequencies f and f. The impedance of at least one of the ground return paths is adjusted so as to control the uniformity of the plasma ion density distribution.

Method Of Processing A Workpiece In A Plasma Reactor With Variable Height Ground Return Path To Control Plasma Ion Density Uniformity

US Patent:
7968469, Jun 28, 2011
Filed:
Apr 11, 2007
Appl. No.:
11/733984
Inventors:
Kenneth S. Collins - San Jose CA, US
Hiroji Hanawa - Sunnyvale CA, US
Kartik Ramaswamy - San Jose CA, US
Shahid Rauf - Pleasanton CA, US
Kallol Bera - San Jose CA, US
Lawrence Wong - Fremont CA, US
Walter R. Merry - Sunnyvale CA, US
Matthew L. Miller - Fremont CA, US
Steven C. Shannon - San Mateo CA, US
Andrew Nguyen - San Jose CA, US
James P. Cruse - Soquel CA, US
James Carducci - Sunnyvale CA, US
Troy S. Detrick - Los Altos CA, US
Subhash Deshmukh - San Jose CA, US
Jennifer Y. Sun - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/302
US Classification:
438714, 438 9, 438706, 15634547
Abstract:
A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Plasma Processing Apparatus

US Patent:
7972469, Jul 5, 2011
Filed:
Apr 22, 2007
Appl. No.:
11/738505
Inventors:
Hiroji Hanawa - Sunnyvale CA, US
Andrew Nguyen - San Jose CA, US
Keiji Horioka - Tokyo, JP
Kallol Bera - San Jose CA, US
Kenneth S. Collins - San Jose CA, US
Lawrence Wong - Fremont CA, US
Martin Jeff Salinas - San Jose CA, US
Roger A. Lindley - Santa Clara CA, US
Hong S. Yang - Pleasanton CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/00
US Classification:
15634546
Abstract:
Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.

Plasma Reactor With Reduced Electrical Skew Using Electrical Bypass Elements

US Patent:
7988815, Aug 2, 2011
Filed:
Jul 26, 2007
Appl. No.:
11/828568
Inventors:
Shahid Rauf - Pleasanton CA, US
Kenneth S. Collins - San Jose CA, US
Kallol Bera - San Jose CA, US
Kartik Ramaswamy - San Jose CA, US
Hiroji Hanawa - Sunnyvale CA, US
Andrew Nguyen - San Jose CA, US
Steven C. Shannon - San Mateo CA, US
Lawrence Wong - Fremont CA, US
Satoru Kobayashi - Mountain View CA, US
Troy S. Detrick - Los Altos CA, US
James P. Cruse - Santa Cruz CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/00
H01L 21/306
US Classification:
15634543, 15634547, 15634548, 118723 R, 118723 E, 118723 I
Abstract:
RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Possible Relatives

Cynthia W Wong  David K Wong  Cyrus L Wong  Davin R Wong  Davina H Wong  Dawson J Wong  Dean Wong  Lawrence G Johnson  Lawrence Standard  Lawrence F Standen 

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