Lee B Max, 782474 Avignon Cir, Santa Rosa, CA 95403

6529081, Mar 4, 2003

Jun 8, 2000

09/590771

Douglas M. Macheel - San Jose CA
Peter B. Jones - Cupertino CA
Lee B. Max - San Jose CA

Zeta, division of Sierra Tech Inc. - San Jose CA

H03F 314

330307, 330 66

According to one embodiment, a circuit is disclosed. The circuit comprises a solid state power amplifying device, an input impedance matching circuit and an output impedance matching circuit coupled to the solid state amplifying device. The input impedance matching circuit includes an input pitchfork trace pattern. The output impedance matching circuit includes an output pitchfork trace pattern. The circuit further discloses an input bias circuit and an output bias circuit.

2001003, Nov 8, 2001

Jan 10, 2001

09/758088

Jeffrey Karker - Cazenovia NY, US
Lee Max - San Jose CA, US
Juan Sepulveda - Tucson AZ, US
Kirankumar Dalal - North Andover MA, US
Norbert Adams - Syracuse NY, US

H01L021/48

257/666000, 438/106000

The present invention provide a plurality of layered substrates for semiconductor packages. The substrates include, for example, a metal matrix composite layer and at least one carrier layer having a coefficient of thermal expansion and a thermal conductivity greater than the metal matrix composite. In the preferred embodiment, the metal matrix composite includes between approximately 50% to 95% refractory metal with the remainder copper. Suitable carrier layer materials include, for example, copper. So configured, the layered substrates provide improved rigidity and thermal characteristics for matching with ceramic materials.

2002001, Jan 31, 2002

Sep 13, 2001

09/952588

Douglas Macheel - San Jose CA, US
Lee Max - San Jose CA, US

H01L021/4763
H01L023/48
H01L023/52
H01L029/40

438/650000

According to one embodiment, a solid state amplifying device is disclosed. The amplifying device comprises a first input bond pad and a first input connection bonded to the first input bond pad. The amplifying device also includes a second input bond pad and a second input connection bonded to the second input bond pad. An equivalent magnitude of current is supplied to the first and second input bond pads.

2003006, Apr 3, 2003

Nov 5, 2002

10/288084

Douglas Macheel - San Jose CA, US
Peter Jones - Cupertino CA, US
Lee Max - San Jose CA, US

H03F003/14

330/307000

According to one embodiment, a circuit is disclosed. The circuit comprises a solid state power amplifying device, an input impedance matching circuit and an output impedance matching circuit coupled to the solid state amplifying device. The input impedance matching circuit includes an input pitchfork trace pattern. The output impedance matching circuit includes an output pitchfork trace pattern. The circuit further discloses an input bias circuit and an output bias circuit.

2003008, May 15, 2003

Nov 12, 2002

10/292560

Douglas Macheel - San Jose CA, US
Lee Max - San Jose CA, US

H01L023/48

257/767000

According to one embodiment, a solid state amplifying device is disclosed. The amplifying device comprises a first input bond pad and a first input connection bonded to the first input bond pad. The amplifying device also includes a second input bond pad and a second input connection bonded to the second input bond pad. An equivalent magnitude of current is supplied to the first and second input bond pads.

2003008, May 15, 2003

Nov 12, 2002

10/292769

Douglas Macheel - San Jose CA, US
Lee Max - San Jose CA, US

H01L023/48

257/767000

According to one embodiment, a solid state amplifying device is disclosed. The amplifying device comprises a first input bond pad and a first input connection bonded to the first input bond pad. The amplifying device also includes a second input bond pad and a second input connection bonded to the second input bond pad. An equivalent magnitude of current is supplied to the first and second input bond pads.

4107728, Aug 15, 1978

Jan 7, 1977

5/757716

Lee B. Max - Sunnyvale CA

Varian Associates, Inc. - Palo Alto CA

H01L 3902
H01L 2302
H01L 2312

357 80

A semiconductor package for containing two individual devices such that they may be externally connected in a push-pull relationship. Two transistors, each having an input and output pad are formed on the same dielectric wafer, in a spaced relationship with each other and a ground plane so as to form two separate transmission line paths. The transistors are wired either in a grounded emitter or grounded base configuration. A shunt inductor is formed by a metallized strip or lead bond from the collector of one transistor to the collector of the other transistor. This inductor reduces the influence of the parasitic capacitance in the equivalent output circuit of the transistors. Since the collectors of both transistors are at the same DC level it is not necessary to include a DC blocking capacitor in series with the inductor. This increases the reliability and the reproducibility of the circuit because bonding wires necessary in prior devices to connect the blocking capacitor in series with the output inductance is not necessary. This packaging technique increases the output impedance, decreases the internal losses, and increases the bandwidth when wired as a push-pull circuit.

6056186, May 2, 2000

Jul 9, 1997

8/881599

Joseph F. Dickson - Cazenovia NY
Lee Benat Max - San Jose CA
Jeffrey A. Karker - Cazenovia NY

Brush Wellman Inc. - Cleveland OH

B23K 3102

2281221

A method is provided for the bonding of ceramics to metals for the production of semiconductor packages. The method includes forming a copper-copper oxide eutectic on a substantially planar copper shim. The shim and its copper-copper oxide eutectic are placed in contact with a ceramic layer and metal layer. The assembly, so formed, is then heated to a temperature at least equal to the melting point of the eutectic and no greater than the melting temperature of copper. Upon cooling of the eutectic, a bond forms bond the ceramic layer to the metal layer.