Leo H Szeto, 88Matawan, NJ
Leo Szeto Phones & Addresses
Matawan, NJ
100 Cole Ln APT 108, Lawrence Twp, NJ 08648 732-3677360
Lawrence Township, NJ
1 Liberty Ct, Howell, NJ 07731 732-3677360
Holmdel, NJ
Work
Position:
Sales/Service
Education
Degree:
Associate degree or higher
Emails
Mentions for Leo H Szeto
Publications & IP owners
Us Patents
External Control Of Recombination Rate For Electron-Ion Recombination Lasers
US Patent:
4388720, Jun 14, 1983
Filed:
Apr 6, 1981
Appl. No.:
6/251168
Inventors:
William T. Silfvast - Holmdel NJ
Leo H. Szeto - Howell NJ
Obert R. Wood - New York NY
Leo H. Szeto - Howell NJ
Obert R. Wood - New York NY
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01S 3097
US Classification:
372 76
Abstract:
The present invention comprises an apparatus which provides a combination of excitation pulses or a signle shaped excitation pulse to a plasma-recombination laser which both creates the plasma and controls the electron-ion collisional recombination rate therein. The application of the single shaped excitation pulse or combination of excitation pulses keeps the electron temperature of the plasma at a temperature unfavorable to recombination until the electron density has fallen into the optimum range for laser action. The termination of the excitation pulse or pulses results in immediate laser action having power at least several orders of magnitude over that achieved in the prior art.
Segmented Plasma Excitation-Recombination Light Source
US Patent:
4395770, Jul 26, 1983
Filed:
Apr 9, 1982
Appl. No.:
6/367092
Inventors:
William T. Silfvast - Holmdel NJ
Leo H. Szeto - Howell NJ
Obert R. Wood - New York NY
Leo H. Szeto - Howell NJ
Obert R. Wood - New York NY
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01S 3093
US Classification:
372 62
Abstract:
An electrical signal, such as a high current pulse, is applied to a series of two or more conducting strips (101-110) installed in series in a laser cavity (150, 151) containing either a buffer gas or a vacuum. The strips are separated by small gaps. When the electrical signal is applied to the strips, plasmas (141-149) are formed in the gap regions. The plasmas are comprised of ions from the strip material. Once formed, these plasmas expand hemispherically, cool and recombine to generate radiation. The composition of the plasmas depends on the strip material, the electric field in the gaps, the gap size and the background gas type and pressure.
Segmented Plasma Excitation-Recombination Laser
US Patent:
4336506, Jun 22, 1982
Filed:
Oct 5, 1979
Appl. No.:
6/082308
Inventors:
William T. Silfvast - Holmdel NJ
Leo H. Szeto - Howell NJ
Obert R. Wood - New York NY
Leo H. Szeto - Howell NJ
Obert R. Wood - New York NY
Assignee:
Bell Telephone Laboratories, Incorporated - Murray Hill NJ
International Classification:
H01S 3093
US Classification:
372 62
Abstract:
A high-voltage, high current pulse is applied to a series of two or more conducting strips (101-110) installed in series in a laser cavity (150-151) containing either a buffer gas or a vacuum. The strips are separated by small gaps. When the high-voltage, high-current pulse is applied to the strips, plasmas (141-149) are formed in the gap regions. The plasmas are comprised of ions from the strip material. Once formed, these plasmas expand hemispherically, cool and recombine to provide laser action. The composition of the plasmas depends on the strip material, the electric field in the gaps, the gap size and the background gas type and pressure.
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