Lee W Trimble Deceased31 Pioneer Point Dr, Branchville, NJ 07826

6015644, Jan 18, 2000

Nov 12, 1998

9/190351

Raymond Andrew Cirelli - Hillsborough NJ
Masis Mkrtchyan - Stirling NJ
Lee Edward Trimble - Orlando FL
George Patrick Watson - Avon NJ
David Lee Windt - Berkeley Heights NJ

Lucent Technologies Inc. - Murray Hill NJ

G03F 900

430 30

A process for device fabrication is disclosed. In the process, optical lithography is used to introduce an image of a desired pattern into an energy sensitive material. In the process, a filter element is provided. The filter element has at least two regions of different transmittance, each region denominated an aperture. The regions are selected by obtaining information about the desired pattern and an optical lithographic tool that will be used to introduce the image of the desired pattern into the energy sensitive resist material. A filter element that provides an image that, when developed, will provide features with dimensions within acceptable process tolerances is then designed. The filter element is designed by modeling the effects of each aperture of the filter element on the intensity profile of an image of the desired pattern. The combined effect of the apertures is then determined.

4835113, May 30, 1989

Nov 23, 1987

7/123695

George K. Celler - New Providence NJ
Lee E. Trimble - Hillsborough NJ

American Telephone and Telegraph Company, AT&T Bell Laboratories - Murry Hill NJ

H01L 21225

437 37

In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this layer and enter the adjacent isolated silicon region while maintaining a relatively narrow spatial configuration. Thus, a discrete buried highly conductive layer is formed. This configuration is particularly useful for transistor configurations such as utilized in switching applications.

5051326, Sep 24, 1991

May 26, 1989

7/358312

George K. Celler - New Providence NJ
Lee E. Trimble - Hillsborough NJ

AT&T Bell Laboratories - Murray Hill NJ

G03F 900

430 5

A mask for X-ray lithography is produced by initially forming a thin layer of polycrystalline silicon on a silicon oxide containing substrate. A portion of the substrate at the periphery of the major surface opposite the silicon layer is masked. The exposed portion of the substrate is removed by an etchant that is selective for silicon oxide containing composition relative to silicon, e. g. aqueous HF. The resulting membrane of silicon on a peripheral region of silicon oxide containing compositions is in tensile stress as required for lithography, but is robust. Metal, X-ray absorbing patterns are formed on the silicon by standard lithographic procedures.

4581814, Apr 15, 1986

Dec 13, 1984

6/681270

George K. Celler - New Providence NJ
Pradip K. Roy - Wyomissing Hills PA
Donald G. Schimmel - Reading PA
Lee E. Trimble - Hillsborough NJ

AT&T Bell Laboratories - Murray Hill NJ

H01L 2120
H01L 2176

29576W

The efficacy of dielectrically isolated device formation on a substrate is substantially enhanced through a specific set of processing steps. In particular, before silicon oxide regions, e. g. , gate oxide regions, are produced, bulk polycrystalline areas are heat treated to substantially increase their polycrystalline silicon grain size.