Lili Ji3030 Lakemont Dr UNIT 4, San Ramon, CA 94582

8551891, Oct 8, 2013

Jun 20, 2012

13/527877

Jingmei Liang - San Jose CA, US
Lili Ji - San Jose CA, US
Nitin K. Ingle - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/31

438763, 438761, 438769

Methods of treating the interior of a plasma region are described. The methods include a preventative maintenance procedure or the start-up of a new substrate processing chamber having a remote plasma system. A new interior surface is exposed within the remote plasma system. The (new) interior surfaces are then treated by sequential steps of (1) forming a remote plasma from hydrogen-containing precursor within the remote plasma system and then (2) exposing the interior surfaces to water vapor. Steps (1)-(2) are repeated at least ten times to complete the burn-in process. Following the treatment of the interior surfaces, a substrate may be transferred into a substrate processing chamber. A dielectric film may then be formed on the substrate by flowing one precursor through the remote plasma source and combining the plasma effluents with a second precursor flowing directly to the substrate processing region.

2008004, Feb 28, 2008

Jun 1, 2007

11/757137

Ka-Ngo Leung - Hercules CA, US
Qing Ji - Albany CA, US
William Barletta - Oakland CA, US
Ximan Jiang - El Cerrito CA, US
Lili Ji - Albany CA, US

G21K 1/02
G01N 23/203
H01J 37/08

378004000, 250492210, 250492220, 378147000

Techniques for controllably directing beamlets to a target substrate are disclosed. The beamlets may be either positive ions or electrons. It has been shown that beamlets may be produced with a diameter of 1 μm, with inter-aperture spacings of 12 μm. An array of such beamlets, may be used for maskless lithography. By step-wise movement of the beamlets relative to the target substrate, individual devices may be directly e-beam written. Ion beams may be directly written as well. Due to the high brightness of the beamlets from extraction from a multicusp source, exposure times for lithographic exposure are thought to be minimized. Alternatively, the beamlets may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans. Such a device may be used for remote detection of explosives.

2012008, Apr 5, 2012

Sep 8, 2011

13/227589

Earl Osman Solis - San Jose CA, US
Lili Ji - San Jose CA, US
Yue Zhao - Mountain View CA, US
Abhijit Basu Mallick - Palo Alto CA, US
Nitin K. Ingle - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01L 21/31

438761, 257E2124

Methods of forming dielectric layers are described. The methods may include forming a silicon-nitrogen-and-hydrogen-containing layer on a substrate. The methods include ozone curing the silicon-nitrogen-and-hydrogen-containing layer to turn the silicon-nitrogen-and-hydrogen-containing layer into a silicon-and-oxygen-containing layer. Following ozone curing, the layer is exposed to an amine-water combination at low temperature before an anneal. The presence of the amine cure allows the conversion to silicon-and-oxygen-containing layer to occur more rapidly and completely at a lower temperature during the anneal. The amine cure also enables the anneal to use a less oxidative environment to effect the conversion to the silicon-and-oxygen-containing layer.

2019030, Oct 3, 2019

Apr 3, 2019

16/374420

- Santa Clara CA, US
Soonam Park - Sunnyvale CA, US
Toan Q. Tran - San Jose CA, US
Lili Ji - San Jose CA, US
Dmitry Lubomirsky - Cupertino CA, US
Akhil Devarakonda - San Jose CA, US
Tien Fak Tan - Campbell CA, US
Tae Won Kim - San Jose CA, US
Saravjeet Singh - Sunnyvale CA, US
Alexander Tam - Union City CA, US
Jingchun Zhang - Cupertino CA, US
Jing J. Zhang - San Jose CA, US

Applied Materials, Inc. - Santa Clara CA

H01J 37/32
C23C 4/134
C23C 4/11

Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum, stainless steel, or nickel plate defining a plurality of apertures. The plate may include a hybrid coating, and the hybrid coating may include a first layer comprising a corrosion resistant coating. The first layer may extend conformally through each aperture of the plurality of apertures. The hybrid coating may also include a second layer comprising an erosion resistant coating extending across a plasma-facing surface of the semiconductor chamber component.

2018005, Mar 1, 2018

Jul 13, 2017

15/649597

- Santa Clara CA, US
Lili Ji - Santa Clara CA, US
Olivier Joubert - Meylan, FR
Dmitry Lubomirsky - Cupertino CA, US
Philip Allan Kraus - San Jose CA, US
Daniel T. McCormick - San Francisco CA, US

B81B 7/00
B81C 1/00
H01L 21/67

Embodiments include devices and methods for detecting particles, monitoring etch or deposition rates, or controlling an operation of a wafer fabrication process. In an embodiment, one or more micro sensors are mounted on wafer processing equipment, and are capable of measuring material deposition and removal rates in real-time. The micro sensors are selectively exposed such that a sensing layer of a micro sensor is protected by a mask layer during active operation of another micro sensor, and the protective mask layer may be removed to expose the sensing layer when the other micro sensor reaches an end-of-life. Other embodiments are also described and claimed.

2017020, Jul 13, 2017

Jan 3, 2017

15/397429

- Santa Clara CA, US
Jingchun ZHANG - Milpitas CA, US
Lili JI - Santa Clara CA, US
Anchuan WANG - San Jose CA, US
Nitin K. INGLE - San Jose CA, US

H01J 37/32
H01L 21/67

The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.