Hong Lin He, 753738 95Th St, Flushing, NY 11372

2017019, Jul 6, 2017

Mar 23, 2017

15/467821

- Armonk NY, US
Ramachandra Divakaruni - Ossining NY, US
Hong He - Albany NY, US
Juntao Li - Cohoes NY, US

H01L 29/10
H01L 29/04
H01L 29/78
H01L 21/28
H01L 29/161

A semiconductor structure includes a material stack located on a surface of a semiconductor substrate. The material stack includes, from bottom to top, a silicon germanium alloy portion that is substantially relaxed and defect-free and a semiconductor material pillar that is defect-free. A dielectric material structure surrounds sidewalls of the material stack and is present on exposed portions of the semiconductor substrate.

2016029, Oct 6, 2016

Mar 30, 2015

14/672311

- Armonk NY, US
Ramachandra Divakaruni - Ossining NY, US
Hong He - Schenectady NY, US
Juntao Li - Cohoes NY, US

H01L 29/10
H01L 21/28
H01L 29/161
H01L 29/78

A semiconductor structure includes a material stack located on a surface of a semiconductor substrate. The material stack includes, from bottom to top, a silicon germanium alloy portion that is substantially relaxed and defect-free and a semiconductor material pillar that is defect-free. A dielectric material structure surrounds sidewalls of the material stack and is present on exposed portions of the semiconductor substrate.

2015006, Mar 12, 2015

Sep 11, 2013

14/023581

- Armonk NY, US
Bruce B. Doris - Slinerlands NY, US
Pouya Hashemi - White Plains NY, US
Hong He - Schenectady NY, US
Ali Khakifirooz - Mountain View CA, US
Alexander Reznicek - Troy NY, US

International Business Machines Corporation - Armonk NY

H01L 29/15
H01L 29/66
H01L 21/02
H01L 21/8234

257 19, 438283

FinFET structures may be formed including superlattice fins. The structure may include a superlattice fin of alternating layers of silicon-germanium with a germanium concentration of approximately 10% to 80% and a second semiconductor material. In some embodiments, the second semiconductor material may include either silicon or carbon-doped silicon. Where the second semiconductor material is carbon-doped silicon, the carbon concentration may range from approximately 0.2% to approximately 4%. The superlattice fin may have a height ranging from approximately 5 nm to approximately 100 nm and include between 5 and 30 alternating layers of silicon-germanium and the second semiconductor material. A gate may be formed over the superlattice fin and a source/drain region may be formed over an end of the superlattice fin.