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Sean Q Lin, 496806 53Rd Dr, Maspeth, NY 11378

Known as:
Lina Li Qing Lin
Related to:
Liyan Chen 62 Chengju Li 58

Sean Lin Phones & Addresses

College Point, NY   

Hempstead, NY   

Work

Company: De novo legal Nov 2011 Position: Japanese document reviewer

Education

School / High School: LEHMAN COLLEGE- Bronx, NY May 2005 Specialities: Bachelor's in Computer Science
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Sean Lin resumes & CV records

Resumes

Sean Lin Photo 42

Sean Lin - Brooklyn, NY

Work:
De Novo Legal Nov 2011 to 2000
Japanese Document Reviewer ORO IMPORT & TRADE COMPANY - New York, NY Mar 2009 to Aug 2011
Office Engineer GAO COMPUTER REPAIR STORE - Brooklyn, NY Jul 2009 to Apr 2010
Cellular Phone Repair Specialist
Education:
LEHMAN COLLEGE - Bronx, NY May 2005 to May 2009
Bachelor's in Computer Science ST. JOHN'S UNIVERSITY 2001 to 2003
Associate's in Associate

Publications & IP owners

Us Patents

Methods Of Semiconductor Contaminant Removal Using Supercritical Fluid

US Patent:
2014035, Dec 4, 2014
Filed:
May 28, 2013
Appl. No.:
13/903618
Inventors:
- Grand Cayman, KY
Moosung M. CHAE - Englewood Cliffs NJ, US
Larry ZHAO - Niskayuna NY, US
Kunaljeet TANWAR - Slingerlands NY, US
Nicholas Vincent LICAUSI - Watervliet NY, US
Christian WITT - Woodbridge CT, US
Ailian ZHAO - Slingerlands NY, US
Ming HE - Slingerlands NY, US
Sean X. LIN - Watervliet NY, US
Xunyuan ZHANG - Albany NY, US
Assignee:
GLOBALFOUNDRIES Inc. - Grand Cayman
International Classification:
H01L 21/3105
H01L 23/00
US Classification:
257632, 438476
Abstract:
A process is provided for the removal of contaminants from a semiconductor device, for example, removing contaminants from pores of an ultra-low k film. In one aspect, a method includes: providing a dielectric layer with contaminant-containing pores and exposing the dielectric layer to a supercritical fluid. The supercritical fluid can dissolve and remove the contaminants. In another aspect, an intermediate semiconductor device structure is provided that contains a dielectric layer with contaminant-containing pores and a supercritical fluid within the pores. In another aspect, a semiconductor device structure with a dielectric layer containing uncontaminated pores is provided.

Possible Relatives

David Lin  De D Lin  Deanna M Lin  Damien Lin  Deborah Lin  Dan K Lin  Debra L Lin  Sean P Johnson  Sean A Johnston  Sean Stanek 

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