Inventors:
Paul Sudak - Lucas TX, US
Robert Adams - Plano TX, US
Jason Neidrich - Allen TX, US
Simon Jacobs - Lucas TX, US
Lisa Wesneski - The Colony TX, US
Linda Wills - Rowlett TX, US
William Carter - Allen TX, US
Judith Frederic - Plano TX, US
International Classification:
G02B 26/00
Abstract:
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.