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Mark S Amman, 59237 23Rd Ave, San Francisco, CA 94121

Known as:
Mark Steven Amman Mark Samman
Related to:
Dan Krupp Lisa E Tyler 33

Mark Amman Phones & Addresses

237 23Rd Ave, San Francisco, CA 94121    415-3865239   

3205 San Mateo St, Richmond, CA 94804    510-5284410   

New Haven, CT   

9659 Harbour Cove Ct, Ypsilanti, MI 48197   

Glendale, CA   

Chesaning, MI   

Ann Arbor, MI   

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Consultant

Location:
Berkeley, CA
Industry:
Research
Work:
Lawrence Berkeley National Laboratory Jul 1, 1999 - Jun 2017
Staff Scientist and Engineer Jul 1, 1999 - Jun 2017
Consultant Lawrence Berkeley National Laboratory Dec 1995 - Jul 1999
Electronics Engineer Yale University Sep 1993 - Oct 1995
Postdoctoral Associate Ford Motor Company May 1989 - Aug 1993
Visiting Graduate Student University of Michigan Dec 1987 - Aug 1993
Research Assistant Nasa Jet Propulsion Laboratory Jan 1990 - Jul 1990
Visiting Graduate Student General Motors Jun 1982 - Aug 1987
Student Engineer Kettering University Apr 1986 - Jun 1986
Laboratory Assistant Kettering University Sep 1985 - Jun 1986
Research Assistant
Education:
University of Michigan 1987 - 1993
Doctorates, Doctor of Philosophy, Applied Physics, Philosophy Kettering University 1982 - 1987
Bachelors, Bachelor of Science, Electronics Engineering
Skills:
Radiation Detectors, Semiconductor Fabrication, Semiconductors, Research, Project Management, Proposal Writing, Programming, C, C#, C++, Labview, Igor Pro, Solidworks, Sensors, Laboratory, Data Analysis, Electronics, Experimentation, Physics, Science
Mark Amman Photo 21

Mark Amman

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Amman

Malls, shopping centers, expensive hotels, bars, and international restaurants mark West Amman as one of the most liberal and modern cities in the region.

Us Patents

Proximity Charge Sensing For Semiconductor Detectors

US Patent:
2010010, Apr 29, 2010
Filed:
Oct 22, 2009
Appl. No.:
12/604173
Inventors:
PAUL N. LUKE - Castro Valley CA, US
Craig S. Tindall - San Ramon CA, US
Mark Amman - San Francisco CA, US
Assignee:
REGENTS OF THE UNIVERSITY OF CALIFORNIA - Oakland CA
International Classification:
G01R 31/26
US Classification:
324765
Abstract:
A non-contact charge sensor includes a semiconductor detector having a first surface and an opposing second surface. The detector includes a high resistivity electrode layer on the first surface and a low resistivity electrode on the high resistivity electrode layer. A portion of the low resistivity first surface electrode is deleted to expose the high resistivity electrode layer in a portion of the area. A low resistivity electrode layer is disposed on the second surface of the semiconductor detector. A voltage applied between the first surface low resistivity electrode and the second surface low resistivity electrode causes a free charge to drift toward the first or second surface according to a polarity of the free charge and the voltage. A charge sensitive preamplifier coupled to a non-contact electrode disposed at a distance from the exposed high resistivity electrode layer outputs a signal in response to movement of free charge within the detector.

Possible Relatives

Jean C Amman  Jennifer M Amman  Kirk D Amman  Scott A Amman  Susan E Amman  Thomas J Amman  Warren C Amman  Mark W Johnson  Mark E Stamps  Mark Stancil 

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