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Mark G Christoforo, 42Houston, TX

Mark Christoforo Phones & Addresses

Houston, TX   

Parsonsfield, ME   

Los Altos Hills, CA   

36 Angell Ct APT 101, Stanford, CA 94305   

Palo Alto, CA   

East Parsonsfield, ME   

Minden, NV   

Schenectady, NY   

Notre Dame, IN   

Okeechobee, FL   

Mentions for Mark G Christoforo

Publications & IP owners

Us Patents

Deposition And Post-Processing Techniques For Transparent Conductive Films

US Patent:
2012029, Nov 22, 2012
Filed:
Jan 13, 2012
Appl. No.:
13/350511
Inventors:
Mark Greyson Christoforo - Stanford CA, US
Saahil Mehra - Saratoga CA, US
Alberto Salleo - San Francisco CA, US
Peter Peumans - Leuven, BE
International Classification:
H01L 31/18
H01L 31/0224
US Classification:
257431, 438 98, 257E31126
Abstract:
In one embodiment, a method is provided for fabrication of a semitransparent conductive mesh. A first solution having conductive nanowires suspended therein and a second solution having nanoparticles suspended therein are sprayed toward a substrate, the spraying forming a mist. The mist is processed, while on the substrate, to provide a semitransparent conductive material in the form of a mesh having the conductive nanowires and nanoparticles. The nanoparticles are configured and arranged to direct light passing through the mesh. Connections between the nanowires provide conductivity through the mesh.

Nanowire Apparatuses And Methods

US Patent:
2014009, Apr 3, 2014
Filed:
Oct 1, 2013
Appl. No.:
14/043603
Inventors:
- Palo Alto CA, US
Mark L. Brongersma - Redwood City CA, US
Yi Cui - Stanford CA, US
Michael D. McGehee - Palo Alto CA, US
Mark Greyson Christoforo - Los Altos Hills CA, US
Wenshan Cai - Marietta GA, US
Assignee:
The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:
H01B 1/00
H01B 13/00
US Classification:
1741261, 428107, 428109, 427557, 977763
Abstract:
Aspects of the present disclosure are directed to apparatuses and methods involving nanowires having junctions therebetween. As consistent with one or more embodiments, an apparatus includes first and second sets of nanowires, in which the second set overlaps the first set. The apparatus further includes a plurality of nanowire joining recrystallization junctions, each junction including material from a nanowire of the first set that is recrystallized into an overlapping nanowire of the second set.

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