Mark Joseph Dalberth, 571291 W 133Rd Cir, Denver, CO 80234

2011031, Dec 22, 2011

Jun 17, 2011

13/162850

Guo Liu - Woburn MA, US
Adam Bertuch - Boston MA, US
Eric W. Deguns - Somerville MA, US
Mark J. Dalberth - Somerville MA, US
Ganesh M. Sundaram - Concord MA, US
Jill Svenja Becker - Cambridge MA, US

Cambridge NanoTech Inc. - Cambridge MA

C23C 16/448
B05C 11/00

42725526, 118695, 118708, 118715, 42725523

An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.

2012014, Jun 7, 2012

Oct 14, 2011

13/273417

Michael J. Sershen - Cambridge MA, US
Ganesh M. Sundaram - Concord MA, US
Roger R. Coutu - Hooksett NH, US
Jill Svenja Becker - Cambridge MA, US
Mark J. Dalberth - Somerville MA, US

Cambridge NanoTech Inc - Cambridge MA

C23C 16/455
C23C 16/458

42725523, 118715, 118729, 42725526, 4272555

An ALD coating system () includes a fixed gas manifold () disposed over a moving substrate with a coating surface of the substrate facing precursor orifice plate (). A gas control system () delivers gas or vapor precursors and inert gas into the fixed gas manifold which directs input gases onto a coating surface of the moving substrate. The gas control system includes a blower () interfaced with the gas manifold which draws gas through the gas manifold to remove unused precursors, inert gas and reaction byproduct from the coating surface. The gas manifold is configured segregate precursor gases at the coating surface to prevent the mixing of dissimilar precursors. The gas manifold may also segregate unused precursor gases in the exhaust system so that the unused precursors can be recovered and reused.

6679946, Jan 20, 2004

Sep 27, 2001

09/967212

Andrew William Jackson - Boulder CO
Mark J. Dalberth - Lafayette CO

Optical Communication Products, Inc. - Woodland Hills CA

C30B 2508

117 84, 117 85, 117 86

A method and apparatus for determining substrate temperature and the mirror center of a film structure formed on the substrate utilizes a transmission intensity spectrum of light to determine mirror center and a normalized transmission intensity spectrum of light to determine substrate temperature. White light is transmitted through the substrate and the film structure during the film structure formation process. Also during the film formation process, a reflected light intensity spectrum is obtained using the same or another light source, for light reflected by the film structure. Substrate temperature and mirror center may be determined during formation of the film structure and, based on the measured temperature and mirror center, the mirror center may be adjusted by changing film formation conditions during the film formation process to vary the thickness of the films being formed. The method and apparatus find particular application in the in-situ monitoring and adjustment of distributed Bragg reflectors used as semiconductor mirrors.

2016011, Apr 28, 2016

Dec 2, 2015

14/957273

- San Jose CA, US
Ganesh M. Sundaram - Concord MA, US
Roger R. Coutu - Hooksett NH, US
Jill Svenja Becker - Cambridge MA, US
Mark J. Dalberth - Somerville MA, US

Ultratech, Inc. - San Jose CA

C23C 16/455
C23C 16/44

An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

2015027, Oct 1, 2015

Dec 29, 2014

14/584034

- San Jose CA, US
Ganesh M. Sundaram - Concord MA, US
Roger R. Coutu - Hooksett NH, US
Jill Svenja Becker - Cambridge MA, US
Mark J. Dalberth - Somerville MA, US

C23C 16/455
C23C 16/453
C23C 16/458

An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.