Mark C Franklin, 68Mira Loma, CA

7154369, Dec 26, 2006

Jun 10, 2004

10/866224

Douglas W. Dietz - Rancho Palos Verdes CA, US
Louis C. Moe - Fountain Valley CA, US
Leah O. Valmidiano - Carson CA, US
Mark R. Franklin - Valencia CA, US
Tony C. Chiang - Oak Park CA, US
Dominic S. Nuccitelli - Granada Hills CA, US

Raytheon Company - Waltham MA

H01H 37/48
F28F 27/00
F25D 29/00

337394, 165276, 62383

A thermal switch selectively couples a heat source to a pair of heat sinks. The thermal switch includes a shunt that is thermally coupled to the heat source. The shunt has a pair of posts. End portions of the posts are at least partially radially surrounded by respective cups. The cups in turn are thermally coupled to respective of the heat sinks. The cups are made of a material with a larger coefficient of thermal expansion than the material of the posts. Activation of one of the heat sinks causes the cup corresponding to that heat sink to contract, bringing it into contact with the corresponding post of the shunt. This opens a heat path through the switch from the heat source to the activated heat sink. Thermal isolation of the second cup is facilitated by an axial isolator of high thermal impedance, facilitating isolation of the inactive heat sink.

5468296, Nov 21, 1995

Dec 17, 1993

8/169571

Roger Patrick - Santa Clara CA
Philippe Schoenborn - San Jose CA
Mark Franklin - Scotts Valley CA
Frank Bose - San Jose CA

LSI Logic Corporation - Milpitas CA

C23C 1600

118723MP

An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RE power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.

6062163, May 16, 2000

Jun 13, 1997

8/876082

Roger Patrick - Santa Clara CA
Philippe Schoenborn - San Jose CA
Mark Franklin - Scotts Valley CA
Frank Bose - San Jose CA

LSI Logic Corporation - Milpitas CA

C23C 1600
C23F 102

118723I

An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.

5639519, Jun 17, 1997

Nov 20, 1995

8/560934

Roger Patrick - Santa Clara CA
Philippe Schoenborn - San Jose CA
Mark Franklin - Scotts Valley CA
Frank Bose - San Jose CA

LSI Logic Corporation - Milpitas CA

H05H 124

427569

An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.