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Mark A Spak, 831 Hallo St, Edison, NJ 08837

Known as:
Marek A Spak
Related to:
Susan R Duncan 58 George Philip 59

Mark Spak Phones & Addresses

1 Hallo St, Edison, NJ 08837    732-2253015   

New York, NY   

Tinton Falls, NJ   

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Mark A Spak

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Education

School / High School: Jagiellonian University 1959 to 1995 Specialities: Chemistry

Skills

Photolithography • Etching • Chemistry • Product Development • Research • Semiconductor Manufacturing • Lithography • Semiconductors • Materials • Process Development • Materials Science • Nanotechnology • Thin Films • Surface Chemistry • Nanomaterials • Surface • Electroplating • Surface Analysis • Process Simulation • Metrology • R&D • Coatings • Characterization • Polymer Science • Polymers • Polymer Chemistry • Design of Experiments • Organic Chemistry • Analytical Chemistry • Spectroscopy • Technology Transfer • Uv/Vis • Silicon • Process Engineering • Optics • Failure Analysis • Process Integration • Sensors • Mems • Semiconductor Industry • Commercialization • Jmp • Patents • Microelectronics • Physics • Spc • Photovoltaics • Extrusion • Catalysis • Scanning Electron Microscopy

Languages

English

Industries

Chemicals
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Mark Spak resumes & CV records

Resumes

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Location:
1 Hallo St, Edison, NJ 08837
Industry:
Chemicals
Education:
Jagiellonian University 1959 - 1995
Skills:
Photolithography, Etching, Chemistry, Product Development, Research, Semiconductor Manufacturing, Lithography, Semiconductors, Materials, Process Development, Materials Science, Nanotechnology, Thin Films, Surface Chemistry, Nanomaterials, Surface, Electroplating, Surface Analysis, Process Simulation, Metrology, R&D, Coatings, Characterization, Polymer Science, Polymers, Polymer Chemistry, Design of Experiments, Organic Chemistry, Analytical Chemistry, Spectroscopy, Technology Transfer, Uv/Vis, Silicon, Process Engineering, Optics, Failure Analysis, Process Integration, Sensors, Mems, Semiconductor Industry, Commercialization, Jmp, Patents, Microelectronics, Physics, Spc, Photovoltaics, Extrusion, Catalysis, Scanning Electron Microscopy
Languages:
English

Publications & IP owners

Us Patents

Lift-Off Process For Patterning Fine Metal Lines

US Patent:
6372414, Apr 16, 2002
Filed:
Mar 12, 1999
Appl. No.:
09/268438
Inventors:
Randy D. Redd - Chandler AZ
Ralph R. Dammel - Flemington NJ
John P. Sagan - Blairstown NJ
Mark A. Spak - Edison NJ
Assignee:
Clariant Finance (BVI) Limited
International Classification:
G03F 726
US Classification:
430327, 430322, 430326, 430329, 430330, 430331, 430464
Abstract:
The present invention relates to a process for providing a pattern on a substrate for use in a metal lift-off process, the process comprising: 1) coating a substrate with a liquid positive photoresist; 2) soft baking the coated substrate; 3) contacting the substrate with an aqueous alkaline developer containing from about 0. 005 volume percent to about 0. 05 volume percent of an alkylene glycol alkyl ether; 4) placing a patterned mask over the substrate; 5) exposing the substrate through the mask; 6) post exposure baking the substrate; 7) optionally, flood exposing the substrate; and 8) developing the substrate with an aqueous alkaline developer. The invention also relates to a novel developer solution of an ammonium hydroxide containing from about 0. 005 volume percent to about 0. 5 volume percent of an alkylene glycol alkyl ether and to a process for producing such a novel developer solution.

Photoresist Composition For Imaging Thick Films

US Patent:
6852465, Feb 8, 2005
Filed:
Mar 21, 2003
Appl. No.:
10/393925
Inventors:
Ralph R. Dammel - Flemington NJ, US
Stephen Meyer - Tobyhanna PA, US
Mark A. Spak - Edison NJ, US
Assignee:
Clariant International Ltd. - Muttenz
International Classification:
G03F007/023
G03F007/30
US Classification:
430191, 430192, 430193, 4302701, 430326
Abstract:
The present invention relates to a light-sensitive photoresist composition especially useful for imaging thick films, comprising a film-forming alkali-soluble resin, a photoactive compound, and a surfactant at a level ranging from about 2000 ppm to about 14,000 ppm by weight of total photoresist. Preferably the photoresist film has a thickness greater than 20 microns. The invention further provides for a process for coating and imaging the light-sensitive composition of this invention.

Aqueous Edge Bead Remover

US Patent:
2005028, Dec 22, 2005
Filed:
Jun 16, 2004
Appl. No.:
10/869417
Inventors:
Ralph Dammel - Flemington NJ, US
Stephen Meyer - Tobyhanna PA, US
Mark Spak - Edison NJ, US
International Classification:
G03C005/00
US Classification:
430331000
Abstract:
The present invention relates to an aqueous based edge bead remover.

Image Reversal Negative Working O-Quinone Diazide And Cross-Linking Compound Containing Photoresist Process With Thermal Curing Treatment And Element Produced Therefrom

US Patent:
5217840, Jun 8, 1993
Filed:
May 25, 1990
Appl. No.:
7/530545
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - East Greenwich RI
Sangya Jain - Bridgewater NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 7023
G03F 709
G03F 730
G03F 738
US Classification:
430165
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Image Reversal Negative Working O-Quinone Diazide And Cross-Linking Compound Containing Photoresist Process With Thermal Curing Treatment

US Patent:
4931381, Jun 5, 1990
Filed:
Nov 8, 1988
Appl. No.:
7/268640
Inventors:
Mark A. Spak - Edison NJ
Donald Mammato - Lebanon NJ
Dana Durham - Bloomsbury NJ
Sangya Jain - Somerville NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 726
US Classification:
430325
Abstract:
A process for converting a normally positive working photosensitive composition to a negative working composition. One forms a composition containing an alkali soluble resin, a 1,2 quinone diazide-4-sulfonyl compound and an acid catalyzed crosslinker in a solvent mixture. After drying and imagewise exposing, the composition is baked and developed to produce a negative image.

Antireflective Coating For Photoresist Compositions

US Patent:
6187506, Feb 13, 2001
Filed:
Aug 5, 1999
Appl. No.:
9/368740
Inventors:
Shuji Ding - Branchburg NJ
Dinesh N. Khanna - Flemington NJ
Mark A. Spak - Edison NJ
Dana L. Durham - Flemington NJ
Jianhui Shan - High Bridge NJ
Eleazer Gonzalez - Bloomfield NJ
Assignee:
Clariant Finance (BVI) Limited
International Classification:
G03C 500
C03F 830
US Classification:
4302711
Abstract:
The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or mixture of solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and does not contain a crosslinking group.

High Temperature Post Exposure Baking Treatment For Positive Photoresist Compositions

US Patent:
4885232, Dec 5, 1989
Filed:
Oct 17, 1986
Appl. No.:
6/921879
Inventors:
Mark A. Spak - Edison NJ
Assignee:
Hoechst Celanese Corporation - Somerville NJ
International Classification:
G03F 726
US Classification:
430326
Abstract:
The invention provides a method for producing a photographic element which comprises coating a substrate with a positive working photosensitive composition which composition comprises an aqueous alkali soluble resin, a quinone diazide photosensitizer and a solvent composition, heat treating said coated substrate at a temperature of from about 20. degree. C. to about 100. degree. C. until substantially all of said solvent composition is removed; imagewise exposing said photosensitive composition to actinic radiation; baking said coated substrate at a temperature of from about 120. degree. C. to about 160. degree. C. for from about 15 seconds to about 90 seconds; and removing the exposed non-image areas of said composition with a suitable developer.

Etchant Solution Containing Hf-Hno.sub.3 -H.sub.2 So.sub.4 -H.sub.2 O.sub.2

US Patent:
4220706, Sep 2, 1980
Filed:
May 10, 1978
Appl. No.:
5/904541
Inventors:
Mark A. Spak - Edison NJ
Assignee:
RCA Corporation - New York NY
International Classification:
H01L 2144
H01L 2188
H01L 21465
US Classification:
430318
Abstract:
An etchant solution for multilayered metal layers comprising an aqueous solution of from 0. 5 to 50 percent by weight of nitric acid, from 0. 03 to 1. 0 percent by weight of hydrofluoric acid, from 0. 05 to 0. 5 percent by weight of hydrogen peroxide and from 0. 1 to 1. 0 percent by weight of sulphuric acid. The solution is compatible with photolithographic techniques and uniformly etches three or more metals.

Possible Relatives

David Spak  Daniel G Spak  George S Spak  Joseph J Spak  Judy M Spak  Laura Spak  Robert F Spak  Mark W Johnson  Mark E Stamps  Mark Stancil 

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