Mark A Spinelli, 692532 Fox Glenn Cir, Bedford, TX 76021
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2532 Fox Glenn Cir, Bedford, TX 76021 817-2679534
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Dallas, TX
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Lawrenceville, GA
Elmira, NY
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Us Patents
Systems And Methods For Detecting And Monitoring Nickel-Silicide Process And Induced Failures
US Patent:
7932105, Apr 26, 2011
Filed:
Oct 14, 2008
Appl. No.:
12/251127
Inventors:
Sharad Saxena - Richardson TX, US
Jae-Yong Park - Frisco TX, US
Benjamin Shieh - Sunnyvale CA, US
Mark Spinelli - Midlothian VA, US
Shiying Xiong - Santa Clara CA, US
Hossein Karbasi - San Diego CA, US
Jae-Yong Park - Frisco TX, US
Benjamin Shieh - Sunnyvale CA, US
Mark Spinelli - Midlothian VA, US
Shiying Xiong - Santa Clara CA, US
Hossein Karbasi - San Diego CA, US
Assignee:
PDF Solutions - San Jose CA
International Classification:
H01L 21/66
US Classification:
438 17, 438 14, 438 10, 438917, 438233, 257E21521, 257E2152, 257E21526, 257E21531
Abstract:
Systems and methods for detecting and monitoring Nickel-silicide process and induced failures. In a first method embodiment, a method of characterizing a Nickel-silicide semiconductor manufacturing process includes accessing a test chip including a parallel coupled chain of transistors, wherein the transistors are designed for inducing stress into Nickel-silicide features of the transistors, and for increasing a probability of a manufacturing failure of the Nickel-silicide features. A biasing voltage is applied to one terminal of the parallel coupled chain, all other terminals of the parallel coupled chain and grounded, and current is measured at each of the all other terminals of the parallel coupled chain. This process is repeated for each terminal of the parallel coupled chain. The measured currents from all possible conduction paths are compared to determine a manufacturing defect in the parallel coupled chain of transistors.
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