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Martin L Sandberg Deceased1296 Skycrest Dr UNIT 1, Walnut Creek, CA 94595

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Martin Grace Sandberg

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1296 Skycrest Dr, Walnut Creek, CA 94595   

East Norwich, NY   

1296 Skycrest Dr APT 1, Walnut Creek, CA 94595   

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Martin Sandberg

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Max Martin

Martin Karl Sandberg, known professionally as Max Martin, (born 26 February 1971) is a Swedish music producer and songwriter. Raised in Stenhamra, a suburb of

Us Patents

Superconducting Qubit Lifetime And Coherence Improvement Via Backside Etching

US Patent:
2021039, Dec 23, 2021
Filed:
Jun 22, 2020
Appl. No.:
16/908704
Inventors:
- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Vivekananda P. Adiga - Ossining NY, US
Yves Martin - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
H01L 39/02
H01L 39/22
H01L 39/24
H01L 27/18
Abstract:
A method for improving lifetime and coherence time of a qubit in a quantum mechanical device is provided. The method includes providing a substrate having a frontside and a backside, the frontside having at least one qubit formed thereon, the at least one qubit having capacitor pads. The method further includes at least one of removing an amount of substrate material from the backside of the substrate at an area opposite the at least one qubit or depositing a superconducting metal layer at the backside of the substrate at the area opposite the at least one qubit to reduce radiofrequency electrical current loss due to at least one of silicon-air (SA) interface, metal-air (MA) interface or silicon-metal (SM) interface so as to enhance a lifetime (T1) and a coherence time (T2) in the at least one qubit.

Spurious Junction Prevention Via In-Situ Ion Milling

US Patent:
2021039, Dec 23, 2021
Filed:
Jun 22, 2020
Appl. No.:
16/908120
Inventors:
- Armonk NY, US
Martin O. Sandberg - Ossining NY, US
Jeng-Bang Yau - Yorktown Heights NY, US
Keith Fogel - Hopewell Junction NY, US
John Bruley - Poughkeepsie NY, US
Markus Brink - White Plains NY, US
Benjamin Wymore - Cortlandt Manor NY, US
International Classification:
H01L 39/24
H01L 39/22
Abstract:
Systems and techniques that facilitate spurious junction prevention via in-situ ion milling are provided. In various embodiments, a method can comprise forming a tunnel barrier of a Josephson junction on a substrate during a shadow evaporation process. In various instances, the method can further comprise etching an exposed portion of the tunnel barrier during the shadow evaporation process. In various embodiments, the shadow evaporation process can comprise patterning a resist stack onto the substrate. In various instances, the etching the exposed portion of the tunnel barrier can leave a protected portion of the tunnel barrier within a shadow of the resist stack. In various instances, the shadow of the resist stack can be based on a direction of the etching the exposed portion of the tunnel barrier. In various embodiments, the shadow evaporation process can further comprise depositing a first superconducting material on the substrate after the patterning the resist stack, oxidizing a surface of the first superconducting material to form the tunnel barrier, and depositing a second superconducting material over the protected portion of the tunnel barrier to form a Josephson junction. In various instances, the etching the exposed portion of the tunnel barrier can occur after the oxidizing the surface of the first superconducting material and before the depositing the second superconducting material.

Quantum Computing Device Design

US Patent:
2021035, Nov 18, 2021
Filed:
Jun 9, 2021
Appl. No.:
17/342815
Inventors:
- Armonk NY, US
Firat Solgun - Ossining NY, US
Salvatore Bernardo Olivadese - Stamford CT, US
Martin O. Sandberg - Ossining NY, US
Jay M. Gambetta - Yorktown Heights NY, US
International Classification:
G06F 30/3323
G06N 10/00
G06F 30/367
Abstract:
Techniques and a system for quantum computing device modeling and design are provided. In one example, a system includes a modeling component and a simulation component. The modeling component models a quantum device element of a quantum computing device as an electromagnetic circuit element to generate electromagnetic circuit data for the quantum computing device. The simulation component simulates the quantum computing device using the electromagnetic circuit data to generate response function data indicative of a response function for the quantum computing device. Additionally or alternatively, a Hamiltonian is constructed based on the response function.

Flux Bias Line Local Heating Device

US Patent:
2021028, Sep 9, 2021
Filed:
Mar 4, 2020
Appl. No.:
16/808991
Inventors:
- Armonk NY, US
Vivekananda P. Adiga - Ossining NY, US
Martin O. Sandberg - Ossining NY, US
International Classification:
H01L 27/18
H01L 39/02
H01L 39/22
G06N 10/00
Abstract:
Devices, systems, and/or methods that can facilitate local heating of a superconducting flux biasing loop are provided. According to an embodiment, a device can comprise a substrate having a superconducting flux bias circuit comprising a biasing loop coupled to a flux controlled qubit device. The device can further comprise a heating device coupled to the biasing loop.

Fabrication Of A Flux Bias Line Local Heating Device

US Patent:
2021028, Sep 9, 2021
Filed:
Mar 4, 2020
Appl. No.:
16/808974
Inventors:
- Armonk NY, US
Vivekananda P. Adiga - Ossining NY, US
Martin O. Sandberg - Ossining NY, US
International Classification:
H01L 39/24
H01L 39/02
H05B 3/06
Abstract:
Devices, systems, and/or methods that can facilitate local heating of a superconducting flux biasing loop are provided. According to an embodiment, a method can comprise forming on a substrate a biasing loop and a flux controlled qubit device of a superconducting flux bias circuit. The method can further comprise forming a heating device on the substrate to couple the heating device to the biasing loop.

System And Method To Control Quantum States Of Microwave Frequency Qubits With Optical Signals

US Patent:
2021027, Sep 2, 2021
Filed:
Oct 2, 2019
Appl. No.:
16/591477
Inventors:
- ARMONK NY, US
Patryk Gumann - Tarrytown NY, US
Martin O. Sandberg - Ossining NY, US
Jason S. Orcutt - Katonah NY, US
International Classification:
G06N 10/00
G06E 1/00
Abstract:
A quantum computer includes a quantum computing system; a transducer disposed inside the quantum computing system, the transducer being configured to receive an optical control propagating wave and output a microwave control propagating wave; and a quantum processor comprising a plurality of qubits, the plurality of qubits being disposed in the quantum computing system, each qubit of the plurality of qubits being configured to receive at least a portion of the microwave control propagating wave to control a quantum state of each qubit of the plurality of qubits.

Adhesion Layer To Enhance Encapsulation Of Superconducting Devices

US Patent:
2021014, May 13, 2021
Filed:
Nov 12, 2019
Appl. No.:
16/681295
Inventors:
- Armonk NY, US
Ali Afzali-Ardakani - Ossining NY, US
Vivekananda P. Adiga - Ossining NY, US
Martin O. Sandberg - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
H01L 39/02
H01L 39/22
H01L 39/24
G06N 10/00
Abstract:
Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing an adhesion layer onto a superconducting resonator and a silicon substrate that are comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the adhesion layer can comprise a chemical compound having a thiol functional group.

Metal Fluoride Encapsulation Of Superconducting Devices

US Patent:
2021014, May 13, 2021
Filed:
Nov 12, 2019
Appl. No.:
16/681331
Inventors:
- Armonk NY, US
Vivekananda P. Adiga - Ossining NY, US
Martin O. Sandberg - Ossining NY, US
Hanhee Paik - Danbury CT, US
International Classification:
H01L 39/24
H01L 39/22
H01L 39/12
Abstract:
Techniques regarding encapsulating one or more superconducting devices of a quantum processor are provided. For example, one or more embodiments described herein can regard a method that can comprise depositing a metal fluoride layer onto a superconducting resonator and a silicon substrate that can be comprised within a quantum processor. The superconducting resonator can be positioned on the silicon substrate. Also, the metal fluoride layer can coat the superconducting resonator.

Isbn (Books And Publications)

Tefillin

Author:
Martin Sandberg
ISBN #:
0838102042

Possible Relatives

Cynthia J Sandberg  David S Sandberg  Dawn R Sandberg  Daniel G Sandberg  Aaron Sandberg  Denise L Sandberg  Danielle Sandberg  Martin E Johnson  Martin L Stancil  Martin L Johnston 

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