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Martin F Schubert, 42210 View St, Mountain View, CA 94041

Known as:
Martin F Shubert
Related to:
David M Kavanaugh 41 Mark A Shubert 43

Martin Schubert Phones & Addresses

210 View St, Mountain View, CA 94041   

Sunnyvale, CA   

Boise, ID   

17 Eaton Rd, Troy, NY 12180    518-2712044   

18 Ledgewood Dr, Troy, NY 12180    518-2712044   

Canton, MA   

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Martin Schubert resumes & CV records

Resumes

Martin Schubert Photo 30

Senior Staff Research Scientist And Founder And Technician Lead, Unannounced X Project

Location:
210 View St, Mountain View, CA 94041
Industry:
Computer Software
Work:
X: the Moonshot Factory Oct 2014 - Sep 2017
Rapid Evaluator and Staff Hardware Engineer X: the Moonshot Factory Oct 2014 - Sep 2017
Senior Staff Research Scientist and Founder and Technician Lead, Unannounced X Project Glo-Usa Sep 1, 2013 - Oct 1, 2014
Senior Device Scientist Micron Inc Nov 2012 - Sep 2013
Principal Engineer - Emerging Memory Micron Inc Jul 2011 - Nov 2012
Led Advanced R and D Lead Micron Inc Jan 2010 - Jul 2011
Led Research Physicist Rensselaer Polytechnic Institute Jul 1, 2009 - Jan 1, 2010
Postdoctoral Research Associate Troy Research Corporation Oct 2007 - Jun 2009
Chief Technology Officer
Education:
Rensselaer Polytechnic Institute 2006 - 2009
Cornell University 2004 - 2006
Cornell University 2000 - 2004
Skills:
Semiconductors, Characterization, Simulations, Optics, R&D, Modeling, Thin Films, Physics, Gan, Design of Experiments, Waveguide, Matlab, Ssl, Python, Process Integration, Colorimetry, Machine Learning, Tensorflow
Languages:
German
Martin Schubert Photo 31

Martin Schubert

Martin Schubert Photo 32

Martin Schubert

Publications & IP owners

Us Patents

Light Emitting Diodes And Display Apparatuses Using The Same

US Patent:
7560746, Jul 14, 2009
Filed:
Feb 28, 2007
Appl. No.:
11/711877
Inventors:
Jae-hee Cho - Yongin-si, KR
Martin Schubert - Troy NY, US
E. Fred Schubert - Troy NY, US
Jong-kyu Kim - Troy NY, US
Cheol-soo Sone - Yongin-si, KR
Assignee:
Samsung Electro-Mechanics Co., Ltd. - Gyeonggi-do
Rensselaer Polytechnic Institute - Troy NY
International Classification:
H01L 33/00
US Classification:
257 98, 349 61
Abstract:
In a light emitting diode, a first semiconductor layer supplies electrons, and a second semiconductor layer supplies holes. An active layer is formed between the first and second semiconductor layers. The active layer receives electrons and holes, and emits light in response to coupling between the electrons and the holes. A first reflective layer is formed on a bottom portion of the first semiconductor layer, and a second reflective layer is formed on a top portion of the second semiconductor layer. The light emitted from the active layer exits toward a side of the active layer.

Reflector Shapes For Light Emitting Diode-Polarized Light Sources

US Patent:
7766495, Aug 3, 2010
Filed:
Jun 24, 2008
Appl. No.:
12/213791
Inventors:
Martin F. Schubert - Troy NY, US
Sameer Chhajed - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Jaehee Cho - Suwon-si, KR
Assignee:
Samsung LED Co., Ltd. - Suwon
International Classification:
F21V 7/00
US Classification:
362 19, 36229607, 362347, 257 98
Abstract:
A light-emitting device including a light source that exhibits polarization anisotropy and a reflector that is shaped so that for light emitted in at least two directions from the light source, the angle between the dominant polarization directions after reflecting from the reflector is smaller than the angle between the dominant polarization directions before reflecting from the reflector. In the light-emitting device the light source may be a light-emitting diode chip or one of a plurality of light sources.

Encapsulant Shapes For Light Emitting Devices Lacking Rotational Symmetry Designed To Enhance Extraction Of Light With A Particular Linear Polarization

US Patent:
7819557, Oct 26, 2010
Filed:
Jun 24, 2008
Appl. No.:
12/213790
Inventors:
Martin F. Schubert - Troy NY, US
Sameer Chhajed - Troy NY, US
Jong Kyu Kim - Watervliet NY, US
E. Fred Schubert - Troy NY, US
Cheolsoo Sone - Suwon-si, KR
Assignee:
Rensselaer Polytechnic Institute - Troy NY
Samsung Electro-Mechanics Co., Ltd. - Suwon
International Classification:
F21V 3/00
F21V 5/00
US Classification:
36231102, 362 19, 362255, 362293, 36231106, 257100
Abstract:
The light-emitting device includes a light source and a transparent encapsulating material that is shaped to modify the polarization anisotropy of light emitted by the light source in at least one direction.

Solid State Lighting Devices With Point Contacts And Associated Methods Of Manufacturing

US Patent:
8410515, Apr 2, 2013
Filed:
Aug 31, 2010
Appl. No.:
12/872864
Inventors:
Martin F. Schubert - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 33/38
US Classification:
257 99, 257 13, 257E33062, 257E33066, 257E33065
Abstract:
Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes an insulative material on the first semiconductor material, the insulative material including a plurality of openings having a size of about 1 nm to about 20 μm, and a conductive material having discrete portions in the individual openings.

High Efficiency Iii-Nitride Light-Emitting Diodes

US Patent:
8451877, May 28, 2013
Filed:
Mar 17, 2011
Appl. No.:
13/050673
Inventors:
Mary Crawford - Albuquerque NM, US
Daniel Koleske - Albuquerque NM, US
Jaehee Cho - Troy NY, US
Di Zhu - Troy NY, US
Martin F. Schubert - Boise ID, US
E. Fred Schubert - Troy NY, US
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01S 5/00
H01S 5/34
H01S 5/20
H01S 5/183
US Classification:
372 46016, 372 4501, 372 4601
Abstract:
Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

Solid State Lighting Devices With Accessible Electrodes And Methods Of Manufacturing

US Patent:
8476649, Jul 2, 2013
Filed:
Dec 16, 2010
Appl. No.:
12/970726
Inventors:
Martin F. Schubert - Boise ID, US
Vladimir Odnoblyudov - Eagle ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 29/18
US Classification:
257 88, 257 99, 257E33023, 257E33032, 257E33034
Abstract:
Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding.

Vertical Solid-State Transducers Having Backside Terminals And Associated Systems And Methods

US Patent:
8497146, Jul 30, 2013
Filed:
Aug 25, 2011
Appl. No.:
13/218289
Inventors:
Vladimir Odnoblyudov - Eagle ID, US
Martin F. Schubert - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 21/00
H01L 21/44
US Classification:
438 33, 438 68, 438 69, 438 98, 438666
Abstract:
Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Solid State Lighting Devices With Current Routing And Associated Methods Of Manufacturing

US Patent:
8502244, Aug 6, 2013
Filed:
Aug 31, 2010
Appl. No.:
12/872219
Inventors:
Martin F. Schubert - Boise ID, US
Assignee:
Micron Technology, Inc. - Boise ID
International Classification:
H01L 33/06
H01L 33/14
H01L 33/18
US Classification:
257 94, 257 14, 257E33008, 257E23141, 438 26
Abstract:
Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material. The second contact is opposite the first contact. The SSL device further includes an insulative material between the first contact and the first semiconductor material, the insulative material being generally aligned with the second contact.

Isbn (Books And Publications)

Zur Theorie Des Gebarens Im Mittelalter: Analyse Von Nichtsprachlicher Ausserung In Mittelhochdeutscher Epik Rolandslied, Eneasroman, Tristan

Author:
Martin J. Schubert
ISBN #:
3412091901

Deutsche Texte Des Mittelalters Zwischen Handschriftennahe Und Rekonstruktion: Berliner Fachtagung 1.-3. April 2004

Author:
Martin J. Schubert
ISBN #:
3484295236

Johannes Rothes Elisabethleben

Author:
Martin J. Schubert
ISBN #:
3050038888

Possible Relatives

David Schubert  Dawn M Schubert  Dale R Schubert  Aaron Schubert  Denise A Schubert  Danielle L Schubert  Dennis R Schubert  Martin E Johnson  Martin L Stancil  Martin L Johnston 

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