Mary Kathryn Gutberlet, 676791 Lakeview Dr, Salinas, CA 93907
Mary Gutberlet Phones & Addresses
6791 Lakeview Dr, Salinas, CA 93907 831-6635200 831-6635206
Rochester, MN
Minneapolis, MN
San Jose, CA
Saint Paul, MN
Conway, NH
6791 Lakeview Dr, Salinas, CA 93907 408-8285372
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Degree:
Graduate or professional degree
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Publications & IP owners
Us Patents
System And Method For Charge-Balanced, Continuous-Write Mask And Wafer Process For Improved Colinearity
US Patent:
7185310, Feb 27, 2007
Filed:
Apr 14, 2004
Appl. No.:
10/823981
Inventors:
Robin Lynn Almes - Sunnyvale CA, US
Mark Anthony Church - Los Gatos CA, US
Mary Kathyrn Gutberlet - Prunedale CA, US
Jiunn Tsay - San Jose CA, US
Benjamin Lu Chen Wang - San Jose CA, US
Mark Anthony Church - Los Gatos CA, US
Mary Kathyrn Gutberlet - Prunedale CA, US
Jiunn Tsay - San Jose CA, US
Benjamin Lu Chen Wang - San Jose CA, US
Assignee:
Hitachi Global Storage Technologies - Amsterdam
International Classification:
G06F 17/50
US Classification:
716 19, 716 21
Abstract:
A charge-balanced, continuous-write mask and wafer process changes the magneto resistive photo-definition step to a two-mask step operation. Critical images are written on one mask layer at a very small electron beam spot size, and non-critical images are written on a second mask layer at a relatively larger electron beam spot size. Both mask layers are put onto the same glass substrate where the critical mask layer is located at the most accurate position on the substrate. The non-critical images may be placed in a peripheral field. In wafer processing, the critical field is aligned and exposed onto the wafer and then the non-critical field is aligned and exposed.
System And Method For Forming Serial Numbers On Hdd Wafers
US Patent:
7531907, May 12, 2009
Filed:
Jun 13, 2005
Appl. No.:
11/151118
Inventors:
Unal Murat Guruz - San Jose CA, US
Mary Kathryn Gutberlet - Prunedale CA, US
Douglas Johnson Werner - Fremont CA, US
Yvette Chung Nga Winton - San Francisco CA, US
Mary Kathryn Gutberlet - Prunedale CA, US
Douglas Johnson Werner - Fremont CA, US
Yvette Chung Nga Winton - San Francisco CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
H01L 23/544
US Classification:
257797, 257E23179
Abstract:
Both the wafer serial number and slider region location indicia on the wafer are formed on the front surface of the wafer using optical principles, i. e. , without using a laser.
Method Of Manufacturing A Magnetic Head With Integration Of A Small Flash Field, Zero Bias, And Non-Reactive Ion Milling For Pole Tip Uniformity
US Patent:
7818875, Oct 26, 2010
Filed:
Dec 7, 2005
Appl. No.:
11/297228
Inventors:
Daniel Wayne Bedell - Gilroy CA, US
Mary Kathryn Gutberlet - Prunedale CA, US
Clarence Kai-Sheng Hsieh - Santa Barbara CA, US
Aron Pentek - San Jose CA, US
Yi Zheng - San Ramon CA, US
Mary Kathryn Gutberlet - Prunedale CA, US
Clarence Kai-Sheng Hsieh - Santa Barbara CA, US
Aron Pentek - San Jose CA, US
Yi Zheng - San Ramon CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G11B 5/187
US Classification:
2960315, 2960314, 2960312, 2960316, 2960318, 360122, 427131, 216 48, 21619234, 20419234
Abstract:
A method of manufacturing a magnetic write head that provides improved pole critical dimension control, such as improved track width control (improved sigma) and improved flare point control. The method involves a combination of several process improvements, such as photolithographically patterning a P pole tip defining photoresist frame using a zero print bias and also using a small flash field. The method also involves the use of a non-reactive ion etch to notch the first pole (P) using the second pole (P) as a mask.
Test Components Fabricated With Large Area Sensors Used For Determining The Resistance Of An Mr Sensor
US Patent:
7855553, Dec 21, 2010
Filed:
Dec 27, 2007
Appl. No.:
11/965587
Inventors:
Robert S. Beach - Los Gatos CA, US
Mary K. Gutberlet - Salinas CA, US
David J. Seagle - Morgan Hill CA, US
Mary K. Gutberlet - Salinas CA, US
David J. Seagle - Morgan Hill CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam
International Classification:
G01R 33/12
US Classification:
324210
Abstract:
Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a test MR sensor, and a second test lead. The test leads and test MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on tie wafer. However, the test MR sensor is fabricated with an area that is larger than areas of the MR sensors in the read elements. The larger area of the test MR sensor causes the resistance of the test MR sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.
Photolithographic Method And Mask Devices Utilized For Multiple Exposures In The Field Of A Feature
US Patent:
7919231, Apr 5, 2011
Filed:
Sep 4, 2007
Appl. No.:
11/899383
Inventors:
Mary Kathryn Gutberlet - Prunedale CA, US
Rambod Nader - Campbell CA, US
Michael Andrew Parker - Fremont CA, US
Douglas Johnson Werner - Fremont CA, US
Rambod Nader - Campbell CA, US
Michael Andrew Parker - Fremont CA, US
Douglas Johnson Werner - Fremont CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G03C 5/00
G03F 1/00
G03F 7/00
G03F 1/00
G03F 7/00
US Classification:
430394, 430 5, 430311
Abstract:
A photolithographic method for forming a plurality of characters on a device utilizes a mask set that includes a plurality of photolithographic masks, wherein each mask includes at least one non-opaque mask character field area that surrounds a non-opaque mask character area. Photoresist is exposed to radiation energy density through the set of masks using the masks sequentially to create at least one character field area of the photoresist, and a character area of the photoresist. Ultimately, because the character areas of the photoresist are exposed to some light energy density from the non-opaque mask character field areas during each mask exposure step, the total photoresist exposure time to create the series of characters is less than that of the prior art.
Test Components Fabricated With Pseudo Sensors Used For Determining The Resistance Of An Mr Sensor
US Patent:
7932717, Apr 26, 2011
Filed:
Dec 27, 2007
Appl. No.:
11/965612
Inventors:
Robert S. Beach - Los Gatos CA, US
Mary K. Gutberlet - Salinas CA, US
David J. Seagle - Morgan Hill CA, US
Mary K. Gutberlet - Salinas CA, US
David J. Seagle - Morgan Hill CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands, B.V. - Amsterdam
International Classification:
G01R 33/12
US Classification:
324210
Abstract:
Test methods and components are disclosed for testing resistances of magnetoresistance (MR) sensors in read elements. Test components are fabricated on a wafer with a first test lead, a pseudo sensor, and a second test lead. The test leads and MR sensor are fabricated with similar processes as first shields, MR sensors, and second shields of read elements on the wafer. However, the pseudo sensor in the test component is fabricated with lead material (or another material having similar resistance properties) instead of an MR thin-film structure like an MR sensor. Forming the pseudo sensor from lead material causes the resistance of the pseudo sensor to be insignificant compared to the lead resistance. Thus, a resistance measurement of the test component represents the lead resistance of a read element. An accurate resistance measurement of an MR sensor in a read element may then be determined by subtracting the lead resistance.
Photolithographic Method And Mask Devices Utilized For Multiple Exposures In The Field Of A Feature
US Patent:
8268517, Sep 18, 2012
Filed:
Mar 1, 2011
Appl. No.:
13/038313
Inventors:
Mary Kathryn Gutberlet - Prunedale CA, US
Rambod Nader - Campbell CA, US
Michael Andrew Parker - Fremont CA, US
Douglas Johnson Werner - Fremont CA, US
Rambod Nader - Campbell CA, US
Michael Andrew Parker - Fremont CA, US
Douglas Johnson Werner - Fremont CA, US
Assignee:
Hitachi Global Storage Technologies Netherlands B.V. - Amsterdam
International Classification:
G03F 1/00
G03F 1/32
G03F 1/32
US Classification:
430 5, 430394
Abstract:
A photolithographic mask set for creating a plurality of characters on a device includes a plurality of photolithographic masks, wherein each mask includes at least one mask character area and at least one mask character field area that surrounds said mask character area; wherein each said mask character field area has a radiation energy density transmission factor Tthat is greater than zero, and wherein each mask character area has a radiation energy density transmission factor Tthat is greater than zero, such that each mask character field area and each mask character area of each mask is not opaque.
Multi-Layer Conductor Leads In A Magnetoresistive Head
US Patent:
5491600, Feb 13, 1996
Filed:
May 4, 1994
Appl. No.:
8/237744
Inventors:
Mary K. Gutberlet - Salinas CA
Mohamad T. Krounbi - San Jose CA
Jacqueline K. Latimer - San Jose CA
Mustafa Pinarbasi - Morgan Hill CA
Mohamad T. Krounbi - San Jose CA
Jacqueline K. Latimer - San Jose CA
Mustafa Pinarbasi - Morgan Hill CA
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
G11B 5127
G11B 533
G11B 533
US Classification:
360113
Abstract:
A magnetoresistive sensor includes a magnetoresistive material, formed on a substrate, and having a first edge and a second edge. A first multilayered conductive lead structure is electrically connected to the first edge, and a second multilayered conductive lead structure is electrically connected to the second edge. The first and second conductive lead structures are constructed of multiple layers of thin film materials that alternate between at least one layer of a thin film of a refractory metal interlaid between at least two thin film layers of a highly conductive metal.
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