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Matt Nowak
Matt Nowak
Matt W Nowak1140 4Th St, Beloit, WI 53511
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Us Patents
Memory Cell And Method Of Forming A Magnetic Tunnel Junction (Mtj) Of A Memory Cell
US Patent:
7919794, Apr 5, 2011
Filed:
Jan 8, 2008
Appl. No.:
11/970557
Inventors:
Shiqun Gu - San Diego CA, US
Seung H. Kang - San Diego CA, US
Matt Nowak - San Diego CA, US
Seung H. Kang - San Diego CA, US
Matt Nowak - San Diego CA, US
Assignee:
QUALCOMM, Incorporated - San Diego CA
International Classification:
H01L 29/82
US Classification:
257241, 257295, 257E21001, 438 3
Abstract:
A memory including a memory cell and method for producing the memory cell are disclosed. The memory includes a substrate in a first plane. A first metal connection extending in a second plane is provided. The second plane is substantially perpendicular to the first plane. A magnetic tunnel junction (MTJ) is provided having a first layer coupled to the metal connection such that the first layer of the MTJ is oriented along the second plane.
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