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Matthew M Grein, 38150 W 9Th Ave UNIT 2204, Denver, CO 80204

Known as:
Matthew W Grein
Related to:
Maryjane Grein 54 Anthony A Grein 58

Matthew Grein Phones & Addresses

Denver, CO   

1112 E Ivory Dr, Pueblo, CO 81007    508-6460996   

35 Adamson St #2, Allston, MA 02134   

Boston, MA   

Bridgewater, MA   

Westport Point, MA   

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Matthew M Grein

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Matthew Grein

Specialties:
Buyer's Agent, Listing Agent

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Matthew Grein - Lawyer

Specialties:
Estate Planning, Real Estate, Land Use / Zoning
ISLN:
1000625784
Admitted:
2008

License Records

Matthew M Grein

Address:
Boston, MA 02127
Licenses:
License #: 9527999 - Expired
Issued Date: Jul 6, 2013
Expiration Date: Oct 17, 2015
Type: Salesperson

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Matthew Grein

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Us Patents

System And Method For Providing A High Frequency Response Silicon Photodetector

US Patent:
7880204, Feb 1, 2011
Filed:
Oct 2, 2006
Appl. No.:
11/541975
Inventors:
Michael W. Geis - Acton MA, US
Steven J. Spector - Arlington MA, US
Donna M. Lennon - Bedford MA, US
Matthew E. Grein - Cambridge MA, US
Robert T. Schulein - Watertown MA, US
Jung U. Yoon - Belmont MA, US
Franz Xaver Kaertner - Newtonville MA, US
Fuwan Gan - Cambridge MA, US
Theodore M. Lyszczarz - Concord MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01L 31/062
H01L 31/113
US Classification:
257292, 257 77, 257293, 257437, 257440, 257443, 257446, 257E27131, 257E27132, 257E27133, 257E27148, 438706, 438710, 438712, 438720
Abstract:
A Silicon photodetector contains an insulating substrate having a top surface and a bottom surface. A Silicon layer is located on the top surface of the insulating substrate, where the Silicon layer contains a center region, the center region being larger in thickness than the rest of the Silicon layer. A top Silicon dioxide layer is located on a top surface of the center region. A left wing of the center region and a right wing of the center region are doped. The Silicon photodetector also has an active region located within the center region, where the active region contains a tailored crystal defect-impurity combination and Oxygen atoms.

Method And Apparatus For Modulation Using A Conductive Waveguide

US Patent:
2007023, Oct 11, 2007
Filed:
Mar 30, 2007
Appl. No.:
11/731338
Inventors:
Michael Geis - Acton MA, US
Steven Spector - Arlington MA, US
Donna Lennon - Bedford MA, US
Yoon Jung - Belmont MA, US
Matthew Grein - Cambridge MA, US
Theodore Lyszczarz - Concord MA, US
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
G02F 1/035
US Classification:
385002000, 385011000
Abstract:
Method and apparatus for modulation of both the intensity and the polarization of radiation in silicon waveguides by applying a biasing voltage to the waveguide.

Semiconductor Elements For Stabilizing Laser Output

US Patent:
6741619, May 25, 2004
Filed:
Apr 3, 2000
Appl. No.:
09/542061
Inventors:
Erik R. Thoen - Somerville MA
Elisabeth M. Koontz - Medford MA
Erich P. Ippen - Belmont MA
Leslie A. Kolodziejski - Belmont MA
Franz X. Kaertner - Rhein-Stetten, DE
Hermann A. Haus - Lexington MA
Matthew E. Grein - Cambridge MA
Assignee:
Massachusetts Institute of Technology - Cambridge MA
International Classification:
H01S 3098
US Classification:
372 18, 372 11, 372 25, 372 75, 372 99
Abstract:
Systems and methods for enhancing the stability of a mode-locked lasers output are disclosed. The laser systems include a mode-locking element that mode-locks the lasers output, and a semiconductor element. The semiconductor element produces a loss at the lasers operative wavelength that increases as pulse energy increases, thereby enhancing the stability of the mode-locked output. The semiconductor elements can be used to enhance stability of both passively and actively mode-locked laser systems.

Possible Relatives

David J Grein  Donald S Grein  Ehrich P Grein  George O Grein  Gilbert S Grein  James A Grein  Jane M Grein  Matthew F Johnson  Matthew A Stanard  Matthew A Stancil 

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