Merrill W Shafer Deceased56 View Crest Dr, Falmouth, MA 02540

4415905, Nov 15, 1983

Feb 10, 1983

6/465236

Joseph W. Mitchell - Montrose NY
Merrill W. Shafer - Yorktown Heights NY
Carlos J. Sambucetti - Croton-on-Hudson NY

International Business Machines Corporation - Armonk NY

C25B 1110
C25B 1108

346 11

The present invention provides a process for electrolytic printing using an improved electrode. The electrode has a region which is an oxide of a metal from the group of ruthenium, iridium, platinum or an alloy thereof. The oxide region is at the extremity of the electrode which during the printing is in close proximity to the printing medium. This oxide region provides an increase in wear resistance of about two orders of magnitude over non-oxidized electrodes. Method for fabricating the described electrode is also set forth.

4623906, Nov 18, 1986

Oct 31, 1985

6/793378

G. V. Chandrashekhar - Mahopac NY
Merrill W. Shafer - Peekskill NY

International Business Machines Corporation - Armonk NY

G01D 1518

346140R

An improved glass or silicon ink jet nozzle is described having a three-layer coating that provides improved mechanical and chemical properties. The coating includes a first layer of silicon nitride, an intermediate layer graded in composition, and a top-most layer of aluminum nitride. The intermediate layer is typically a solid solution of silicon and aluminum nitrides being silicon-rich at the interface with the silicon nitride layer, and aluminum-rich at the interface with the overlying aluminum nitride layer. This three-layer coating provides the required dielectric properties, displays very low wettability, and is extremely corrosion resistant to all types of inks.

4231892, Nov 4, 1980

Mar 5, 1979

6/017521

Ifay F. Chang - Chappaqua NY
Merrill W. Shafer - Yorktown Heights NY

International Business Machines Corporation - Armonk NY

C09K 1144

2523016F

A series of solid solutions in the systems Zn. sub. 2 SiO. sub. 4 -Zn. sub. 2 M. sup. +3. sub. 5 M. sup. +5. sub. 5 O. sub. 4, is synthesized by practice of this disclosure. Solid reaction technique is used where M. sup. +3 and M. sup. +5 signify ions from Groups III and V of the periodic table. Large increases in the efficiency compared to the prior art P1 phosphor (Zn. sub. 2 SiO. sub. 4 :Mn) are achieved by substituting various combinations of Group III and V oxides for SiO. sub. 2, e. g. , Al and P to provide Zn. sub. 2-y Mn. sub. y Si. sub. 1-2x Al. sub. x P. sub. x O. sub. 4. The photoluminescence efficiency of the phosphors of this disclosure exhibit strong dependence on the III-V substitution concentration, x, having highest efficiency for the approximate range of x=0. 25% to 1. 5%.