Michael C Brading, 611201 S Main St UNIT 305, Milpitas, CA 95035

2010018, Jul 29, 2010

Mar 19, 2010

12/728181

Ethan Jacob Dukenfield Klem - Toronto, CA
Dean Delehanty Macneil - Montreal, CA
Gerasimos Konstantatos - Toronto, CA
Jiang Tang - Toronto, CA
Michael Charles Brading - Danville CA, US
Hui Tian - Cupertino CA, US
Edward Hartley Sargent - Toronto, CA

H01L 27/146

2502081, 977774, 977954

A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

2010018, Jul 29, 2010

Mar 19, 2010

12/728184

Ethan Jacob Dukenfield Klem - Toronto, CA
Dean Delehanty Macneil - Montreal, CA
Gerasimos Konstantatos - Toronto, CA
Jiang Tang - Toronto, CA
Michael Charles Brading - Danville CA, US
Hui Tian - Cupertino CA, US
Edward Hartley Sargent - Toronto, CA

H01L 31/09

2502141, 250214 C, 250214 DC, 977954, 977774

A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

2011026, Nov 3, 2011

May 3, 2011

13/099903

Michael R. Malone - San Jose CA, US
Pierre Henri Rene Della Nave - Mountain View CA, US
Michael Charles Brading - Danville CA, US
Jess Jan Young Lee - Woodside CA, US
Hui Tian - Cupertino CA, US
Igor Constantin Ivanov - Danville CA, US
Edward Hartley Sargent - Toronto, CA

H04N 5/225

348262, 348E05024

In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array includes at least four megapixels and the second image sensor array includes one-half or less than the number of pixels in the first image sensor array.

2011030, Dec 22, 2011

Jun 8, 2011

13/156235

Edward Hartley Sargent - Toronto, CA
Rajsapan Jain - Menlo Park CA, US
Igor Constantin Ivanov - Danville CA, US
Michael R. Malone - San Jose CA, US
Michael Charles Brading - Danville CA, US
Hui Tian - Cupertino CA, US
Pierre Henri Rene Della Nave - Mountain View CA, US
Jess Jan Young Lee - Woodside CA, US

H01L 27/146

257443, 257E27151

In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.

2013025, Sep 26, 2013

May 14, 2013

13/894184

Michael R. Malone - San Jose CA, US
Pierre Henri Rene Della Nave - Mountain View CA, US
Michael Charles Brading - Danville CA, US
Jess Jan Young Lee - Woodside CA, US
Hui Tian - Cupertino CA, US
Igor Constantin Ivanov - Danville CA, US
Edward Hartley Sargent - Toronto, CA

G02B 15/00

348262

In various example embodiments, an imaging system and method are provided. In an embodiment, the system comprises a first image sensor array, a first optical system to project a first image on the first image sensor array, the first optical system having a first zoom level. A second optical system is to project a second image on a second image sensor array, the second optical system having a second zoom level. The second image sensor array and the second optical system are pointed in the same direction as the first image sensor array and the first optical system. The second zoom level is greater than the first zoom level such that the second image projected onto the second image sensor array is a zoomed in on portion of the first image projected on the first image sensor array. The first image sensor array may include at least four megapixels and the second image sensor array may include one-half or less than the number of pixels in the first image sensor array.

2009015, Jun 18, 2009

Apr 18, 2008

12/106256

Ethan Jacob Dukenfield Klem - Toronto, CA
Dean Delehanty MacNeil - Montreal, CA
Gerasimos Konstantatos - Toronto, CA
Jiang Tang - Toronto, CA
Michael Charles Brading - Danville CA, US
Hui Tian - Cupertino CA, US
Edward Hartley Sargent - Toronto, CA

H01L 31/0224
H01L 31/02

257440, 257466, 257448, 257E31111, 257E31124, 977950

A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.

2021025, Aug 19, 2021

Feb 17, 2021

17/177588

- San Jose CA, US
Michael Charles BRADING - Milpitas CA, US

H04N 5/232
G06F 3/03
G01S 17/89

A depth sensing system including an electronic display, a light source, an array of optical sensing elements, and a depth map generator. The light source is configured to transmit periodic bursts of light in a field of view (FOV) of the depth sensing system. The array of optical sensing elements is disposed behind the electronic display and configured to detect light reflected from one or more objects in the FOV of the depth sensing system, where the reflected light is partially occluded by the electronic display. The depth map generator is configured to receive sensor data based on the detected light form the array of optical sensing elements and determine depth information about the one or more objects by applying one or more neural network models to the received sensor data.

2017006, Mar 9, 2017

Nov 7, 2016

15/345461

- Menlo Park CA, US
Rajsapan Jain - Menlo Park CA, US
Igor Constantin Ivanov - Danville CA, US
Michael R. Malone - San Jose CA, US
Michael Charles Brading - Danville CA, US
Hui Tian - Cupertino CA, US
Pierre Henri Rene Della Nave - Mountain View CA, US
Jess Jan Young Lee - Woodside CA, US

H01L 27/146
H04N 5/378
H04N 5/376

In various embodiments, a photodetector includes a semiconductor substrate and a plurality of pixel regions. Each of the plurality of pixel regions comprises an optically sensitive layer over the semiconductor substrate. A pixel circuit is formed for each of the plurality of pixel regions. Each pixel circuit includes a pinned photodiode, a charge store, and a read out circuit for each of the plurality pixel regions. The optically sensitive layer is in electrical communication with a portion of a silicon diode to form the pinned photodiode. A potential difference between two electrodes in communication with the optically sensitive layer associated with a pixel region exhibits a time-dependent bias; a biasing during a first film reset period being different from a biasing during a second integration period.