Michael C Callahan DeceasedCarlisle, MA

6406540, Jun 18, 2002

Apr 27, 1999

09/299928

Meckie T. Harris - Nashua NH
Michael J. Suscavage - Shirley MA
David F. Bliss - Arlington MA
John S. Bailey - Temple NH
Michael Callahan - Temple NH

The United States of America as represented by the Secretary of the Air Force - Washington DC

C30B 2306

117104, 117952, 20429839, 20429812, 42725539, 427255394

This invention provides a process and apparatus for producing products of M-nitride materials wherein M=gallium (GaN), aluminum (AlN), indium (InN), germanium (GeN), zinc (ZnN) and ternary nitrides and alloys such as zinc germanium nitride or indium aluminum gallium nitride. This process and apparatus produce either free-standing single crystals, or deposit layers on a substrate by epitaxial growth or polycrystalline deposition. Also high purity M-nitride powders may be synthesized. The process uses an ammonium halide such as ammonium chloride, ammonium bromide or ammonium iodide and a metal to combine to form the M-nitride which deposits in a cooler region downstream from and/or immediately adjacent to the reaction area. High purity M-nitride can be nucleated from the vapor to form single crystals or deposited on a suitable substrate as a high density material. High purity M-nitride single crystals can be grown by the direct reaction of the halide with the M-metal in a range of sizes from a few micrometers to centimeters, depending on the growth conditions.

6676752, Jan 13, 2004

Feb 26, 2002

10/083614

Michael J. Suscavage - Shirley MA
David F. Bliss - Arlington MA
Michael J. Callahan - Bedford MA
Gerald W. Iseler - Chelmsford MA
John S. Bailey - Temple NH

The United States of America as represented by the Secretary of the Air Force - Washington DC

C30B 2306

117104, 117952, 20429812, 20429814, 42725536, 427255394

Method and apparatus are provided for forming metal nitrides (MN) wherein M is contacted with iodine vapor or hydrogen iodide (HI) vapor to form metal iodide (MI) and contacting MI with ammonia to form the MN in a process of reduced or no toxicity. MN is then deposited on a substrate, on one or more seeds or it can self nucleate on the walls of a growth chamber, to form high purity metal nitride material. The inventive MN material finds use in semiconductor materials and in making nitride electronic devices as well as other uses.

8236102, Aug 7, 2012

Jan 24, 2009

12/321763

Buguo Wang - Burlington MA, US
David F. Bliss - Arlington MA, US
Michael J. Callahan - Hanson MA, US

Solid State Scientific Corporation - Hollis NH

C30B 7/00
C30B 21/02
C30B 28/06

117 71, 117 12, 117950, 4235941, 4235948, 423598, 423600, 423607

A method of hydrothermally synthesizing sapphire single crystals doped with trivalent metal ions in a crystal-growth autoclave including a crystal-growth zone and nutrient-dissolution zone in fluid communication with the crystal-growth zone is provided. Implementations of the method including situating within the crystal-growth zone at least one sapphire-based seed crystal and situating within the nutrient-dissolution zone an aluminum-containing material to serve as nutrient. An acidic, trivalent-metal-ion-containing growth solution is introduced into the cavity in a quantity sufficient, at least when heated to a predetermined average temperature, to immerse the at least one seed crystal and the nutrient in the growth solution. The growth solution is selected such that sapphire exhibits retrograde solubility therein and the growth process is carried out while maintaining an interior-cavity pressure within a range between and including each of 3. 5 kilopounds per square inch and 25 kilopounds per square inch and while maintaining a temperature differential between the crystal-growth and nutrient-dissolution zones such that the average temperature within the crystal-growth zone is higher than the average temperature within the nutrient-dissolution zone.

2005008, Apr 21, 2005

Apr 1, 2004

10/817455

Cristina Davis - Cambridge MA, US
Jeffrey Borenstein - Holliston MA, US
Angela Zapata - Arlington MA, US
Jeffrey Gelfand - Cambridge MA, US
Michael Callahan - Cambridge MA, US
Thomas Stair - Newton MA, US
Raanan Miller - Boston MA, US

A61B005/08

600532000, 422084000

An asymmetric field ion mobility spectrometer for breath analysis and a system for analysis of a sample of breath taken from a patient.

2008020, Aug 21, 2008

Jan 29, 2008

12/021765

Michael C. Callahan - Carlisle MA, US

G06Q 90/00

705500

A method is provided for facilitating an alterable commitment to occupy real property. The first step includes providing a first party to occupy a real property asset to satisfy pre-determined alterable occupancy commitments. The second step includes providing a second party having at least one real property asset for satisfying the occupancy requirements of the first party. The third step includes forming an occupancy bond that includes a financial commitment between the first party and second party for a specified period of time.

6113985, Sep 5, 2000

Apr 27, 1999

9/300053

Michael J. Suscavage - Shirley MA
Meckie T. Harris - Nashua NH
David F. Bliss - Arlington MA
John S. Bailey - Temple NH
Michael Callahan - Temple NH

The United States of America as represented by Secretary of the Air Force - Washington DC

C23C 1608

42725539

Using a GaN growth furnace, at least three different techniques can be used for forming the targets for the deposition of thin films. In the first, nitrides can be deposited as a dense coating on a target backing plate for use as a target. In this approach, the backing plate is placed near the Group III metal. During processing, the Group III metal or metal halide vaporizes and reacts with the nitrogen source to deposit a dense polycrystalline layer on the backing plate. To build up a thick layer on the backing plate, the backing plate is repeatedly placed in the processing furnace until a satisfactory thickness is attained. For the second approach, a properly shaped reaction vessel, the dense, thick Group III nitride crust that forms on top of the Group III metal during the process can be used directly or mechanically altered to meet the size requirements for a sputtering target holder. As a third approach, the Group III nitride material can be ground into a fine powder using traditional ceramic powder processing methods and then pressed to consolidate the powder into a sputtering target. The third processing option would typically lead to a low density target; however, this "green" compact can then be reinserted into the same processing apparatus that the original powder was synthesized to infiltrate the open pores with the same or another group III metal nitride.

5270052, Dec 14, 1993

Apr 19, 1991

7/689709

Jeffrey A. Gelfand - Cambridge MA
Michael V. Callahan - Cambridge MA
Yoshinori Yamada - Tokyo, JP

New England Medical Center Hospitals, Inc. - Boston MA

A61K 9127

424450

A method for treating an infection caused by an intracellular parasite in a patient. The method includes administering to the patient liposomes coated with C-reactive protein, wherein the liposomes include phosphatidylcholine or phosphorylcholine.