Inventors:
Xian Liu - Sunnyvale CA, US
Michael James Heinz - Livermore CA, US
Eugene Jinglun Tam - Saratoga CA, US
Michael K. Doan - Milpitas CA, US
Alexander Kotov - Sunnyvale CA, US
Tho Ngoc Dang - San Jose CA, US
Jack Edward Frayer - Boulder Creek CA, US
Jung Hee Yun - Fremont CA, US
Thuant T. Vu - San Jose CA, US
International Classification:
G11C 16/06
Abstract:
A non-volatile memory device has an array of non-volatile memory cells, a first plurality of non-volatile memory reference cells, with each reference cell capable of being programmed to a reference level different from the other reference cells; and a second plurality of comparators. Each of the comparators is connectable to one of the first plurality of non-volatile memory reference cells and to one of a third plurality of memory cells from among the array of non-volatile memory cells.