Inventors:
- Armonk NY, US
Colin J. Goyette - Red Hook NY, US
Michael R. Kennett - Poughkeepsie NY, US
Mahmoud Khojasteh - Poughkeepsie NY, US
Qinghuang Lin - Yorktown Heights NY, US
James J. Steffes - Poughkeepsie NY, US
Adam D. Ticknor - Wappingers Falls NY, US
Wei-tsu Tseng - Hopewell Junction NY, US
Assignee:
International Business Machines Corporation - Armonk NY
International Classification:
H01L 21/02
Abstract:
A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.
