Michael Mcpartlin resumes & CV records
Resumes
Michael W Mcpartlin, 35Bellingham, MA
Michael Mcpartlin Phones & Addresses
Bellingham, MA
Natick, MA
122 Plain St, Rockland, MA 02370 781-8781524
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Publications & IP owners
Us Patents
Integrated Power Amplifier Circuit
US Patent:
6822511, Nov 23, 2004
Filed:
Jun 27, 2003
Appl. No.:
10/607125
Inventors:
Mark Doherty - Westford MA
John Gillis - Tewksbury MA
Michael McPartlin - North Andover MA
David Helms - Tyngsboro MA
Phillip Antognetti - Chelmsford MA
John Gillis - Tewksbury MA
Michael McPartlin - North Andover MA
David Helms - Tyngsboro MA
Phillip Antognetti - Chelmsford MA
Assignee:
SiGe Semiconductor Inc. - Ottawa
International Classification:
H03G 516
US Classification:
330133, 330297, 330127, 455127
Abstract:
Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit.
Integrated Power Amplifier Circuit
US Patent:
6825725, Nov 30, 2004
Filed:
Jun 27, 2003
Appl. No.:
10/607123
Inventors:
Mark Doherty - Westford MA
John Gillis - Tewksbury MA
Michael McPartlin - North Andover MA
David Helms - Tyngsboro MA
Phillip Antognetti - Chelmsford MA
John Gillis - Tewksbury MA
Michael McPartlin - North Andover MA
David Helms - Tyngsboro MA
Phillip Antognetti - Chelmsford MA
Assignee:
SiGe Semiconductor Inc. - Ottawa
International Classification:
H03F 304
US Classification:
330289, 330278, 330285, 330290, 330296, 330297, 330 98, 330310
Abstract:
Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit.
Integrated Power Amplifier Circuit
US Patent:
6882220, Apr 19, 2005
Filed:
Jun 27, 2003
Appl. No.:
10/607124
Inventors:
Mark Doherty - Westford MA, US
John Gillis - Tewksbury MA, US
Michael McPartlin - North Andover MA, US
David Helms - Tyngsboro MA, US
Phillip Antognetti - Chelmsford MA, US
John Gillis - Tewksbury MA, US
Michael McPartlin - North Andover MA, US
David Helms - Tyngsboro MA, US
Phillip Antognetti - Chelmsford MA, US
Assignee:
SiGe Semiconductor Inc. - Ottawa
International Classification:
H03G005/16
H03G003/00
H03F003/04
H04B001/04
H03G003/00
H03F003/04
H04B001/04
US Classification:
330133, 330297, 330127, 455127
Abstract:
Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit.
Integrated Power Amplifier Circuit
US Patent:
6917243, Jul 12, 2005
Filed:
Jun 27, 2003
Appl. No.:
10/607122
Inventors:
Mark Doherty - Westford MA, US
John Gillis - Tewksbury MA, US
Michael McPartlin - North Andover MA, US
David Helms - Tyngsboro MA, US
Phillip Antognetti - Chelmsford MA, US
John Gillis - Tewksbury MA, US
Michael McPartlin - North Andover MA, US
David Helms - Tyngsboro MA, US
Phillip Antognetti - Chelmsford MA, US
Assignee:
SiGe Semiconductor Inc. - Ottawa
International Classification:
H03G005/16
H03F003/04
H03F003/04
US Classification:
330133, 330296, 330310
Abstract:
Prior art architectures of power amplifiers employ a substantial die area, and utilize multiple integrated circuit technologies with a net higher manufacturing cost and large associated packaging area. A new scheme is presented wherein several sense and control signals are used to provide fine and gross control over the key figures of merit associated with integrated semiconductor power amplifiers. How and where these sense and control signals are used is crucial to achieving the most manufacturable and most economic integrated amplifier. In accordance with a first embodiment of the invention, a Dual Feedback-Low power regulation circuit for a three-stage power amplifier integrated circuit is provided. In accordance with a second embodiment of the invention, a current source feedback circuit having low RF output signal power regulation for a three-stage power amplifier integrated circuit is provided. In accordance with a third embodiment of the invention, a detector circuit in the form of an integrated logarithmic current detector circuit in conjunction with a three stage power amplifier integrated circuit.
Switching Circuit
US Patent:
8451044, May 28, 2013
Filed:
Jun 29, 2009
Appl. No.:
12/493437
Inventors:
John Nisbet - Nepean, CA
Michael McPartlin - North Andover MA, US
Chun-Wen Paul Huang - Methuen MA, US
Michael McPartlin - North Andover MA, US
Chun-Wen Paul Huang - Methuen MA, US
Assignee:
SiGe Semiconductor, Inc.
International Classification:
H03K 17/16
US Classification:
327389, 327308, 333104
Abstract:
A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complementary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output.
Integrated Circuit With Improved Transmission Line Structure And Electromagnetic Shielding Between Radio Frequency Circuit Paths
US Patent:
2010014, Jun 10, 2010
Filed:
Dec 1, 2009
Appl. No.:
12/628324
Inventors:
Mark Doherty - Westford MA, US
Michael McPartlin - North Andover MA, US
Chun-Wen Paul Huang - Methuen MA, US
Michael McPartlin - North Andover MA, US
Chun-Wen Paul Huang - Methuen MA, US
Assignee:
SiGe Semiconductor Inc. - Ottawa
International Classification:
H01L 23/552
US Classification:
257659, 257E23114
Abstract:
An integrated circuit is disclosed having through silicon vias spaced apart one from another and conductors, each coupled to one or more of the through silicon vias, the conductors in aggregate in use forming a segmented conductive plane maintained at a same potential and forming an electromagnetic shield.
Switching Circuit
US Patent:
2013026, Oct 3, 2013
Filed:
May 15, 2013
Appl. No.:
13/894773
Inventors:
- Ottawa, CA
Michael Joseph McPartlin - North Andover MA, US
Chun-Wen Paul Huang - Methuen MA, US
Michael Joseph McPartlin - North Andover MA, US
Chun-Wen Paul Huang - Methuen MA, US
Assignee:
SiGe Semiconductor, Inc. - Ottawa
International Classification:
H04B 1/44
US Classification:
455 78
Abstract:
A method for controlling a switch based on transistors is disclosed. A switching circuit for switching a signal from an input port to an output port thereof is provided. A shunting circuit for switchably shunting the signal from the input port to ground is also provided. A control signal is generated for biasing a control port of the shunting circuit and an approximately complimentary control signal is generated for biasing of the switching circuit to either shunt a signal received at the input port or to switch the signal to the output port. A further bias signal for biasing a port within the switching circuit along the signal path between the input port and the output port is also provided.
Fet Transistor On High-Resistivity Substrate
US Patent:
2014000, Jan 2, 2014
Filed:
Jun 28, 2012
Appl. No.:
13/536609
Inventors:
Michael Joseph McPartlin - North Andover MA, US
Assignee:
SKYWORKS SOLUTIONS, INC. - Woburn MA
International Classification:
H01L 27/06
H01L 21/98
H01L 21/98
US Classification:
257379, 438107, 257E27016, 257E21705
Abstract:
Systems and methods are disclosed for processing radio frequency (RF) signals using one or more FET transistors disposed on or above a high-resistivity region of a substrate. The substrate may include bulk silicon, at least a portion of which has high-resistivity characteristics. For example, the bulk substrate may have a resistivity greater than 500 Ohm*cm, such as around 1 kOhm*cm. In certain embodiments, one or more of the FET devices are surrounded by a low-resistivity implant configured to reduce effects of harmonic and other interference.
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