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Michael J Tischler, 55120 E Harry St, Castlewood, SD 57223

Known as:
Michael James Tischler Michael J Graak Michae Tischler Michael Tischlar Michael J Tishler
Related to:
Donald P Tischler

Michael Tischler Phones & Addresses

120 E Harry St, Castlewood, SD 57223   

Brandon, SD   

Rapid City, SD   

Mitchell, SD   

7711 51St Ave, Glendale, AZ 85301    623-4633360   

Thousand Oaks, CA   

Gillette, WY   

Work

Company: Safeway Aug 2013 Position: Traveling first assistant manager

Education

School / High School: New Mexico State University 1996 Specialities: Master of Business Administration in Production and Operations Management
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Michael Tischler resumes & CV records

Resumes

Michael Tischler Photo 28

Sales District Leader

Location:
Brandon, SD
Industry:
Food Production
Work:
Flna
Sales District Leader
Michael Tischler Photo 29

Michael Tischler

Michael Tischler Photo 30

Michael Tischler - Rapid City, SD

Work:
Safeway Aug 2013 to 2000
Traveling First Assistant Manager Safeway - Rapid City, SD Mar 2009 to Aug 2013
Grocery Clerk Action Mechanical - Rapid City, SD Dec 2007 to Oct 2012
HVAC installer Complete Career Center - Mitchell, SD Aug 2007 to Dec 2007 Coca Cola Enterprises - Tempe, AZ Aug 2003 to Feb 2007
Area Sales Manager Albertsons Inc Aug 1988 to Aug 2003
Courtesy Clerk, Front End Clerk, Dairy Clerk, Liquor Clerk
Education:
New Mexico State University 1996 to 1998
Master of Business Administration in Production and Operations Management New Mexico State University 1988 to 1996
Bachelor of Arts in English New Mexico State University 1988 to 1996
Bachelor of Arts in Philosophy

Publications & IP owners

Us Patents

Bulk Single Crystal Gallium Nitride And Method Of Making Same

US Patent:
6765240, Jul 20, 2004
Filed:
Aug 21, 2001
Appl. No.:
09/933943
Inventors:
Michael A. Tischler - Phoenix AZ
Thomas F. Kuech - Madison WI
Robert P. Vaudo - New Milford CT
Assignee:
Cree, Inc. - Durham NC
International Classification:
H01L 310328
US Classification:
257183, 257200, 257615
Abstract:
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e. g. , with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.

Bulk Single Crystal Gallium Nitride And Method Of Making Same

US Patent:
6972051, Dec 6, 2005
Filed:
Aug 14, 2001
Appl. No.:
09/929789
Inventors:
Michael A. Tischler - Phoenix AZ, US
Thomas F. Kuech - Madison WI, US
Robert P. Vaudo - New Milford CT, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
C30B033/08
US Classification:
117 97, 117 1, 117 90, 117915
Abstract:
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e. g. , with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.

Bulk Single Crystal Gallium Nitride And Method Of Making Same

US Patent:
7332031, Feb 19, 2008
Filed:
Oct 5, 2005
Appl. No.:
11/243768
Inventors:
Michael A. Tischler - Phoenix AZ, US
Thomas F. Kuech - Madison WI, US
Robert P. Vaudo - New Milford CT, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
C30B 25/00
US Classification:
117 97, 117 84, 117 88, 117915, 117952
Abstract:
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e. g. , with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.

Semiconductor Structure And Method Of Manufacture

US Patent:
7777295, Aug 17, 2010
Filed:
Dec 8, 2008
Appl. No.:
12/329914
Inventors:
Bishnu Prasanna Gogoi - Scottsdale AZ, US
Michael Albert Tischler - Phoenix AZ, US
Assignee:
HVVI Semiconductors, Inc. - Phoenix AZ
International Classification:
H01L 29/06
H01L 21/764
H01L 21/768
US Classification:
257522, 257506, 257510, 257634, 257E2902, 257E21573, 257E21581
Abstract:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

Bulk Single Crystal Gallium Nitride And Method Of Making Same

US Patent:
7794542, Sep 14, 2010
Filed:
Feb 12, 2008
Appl. No.:
12/030198
Inventors:
Michael A. Tischler - Phoenix AZ, US
Thomas F. Kuech - Madison WI, US
Robert P. Vaudo - Cary NC, US
Assignee:
Cree, Inc. - Durham NC
International Classification:
C30B 25/00
US Classification:
117 97, 117 84, 117 88, 117915, 117952
Abstract:
A single crystal M*N article, which may be made by a process including the steps of: providing a substrate of material having a crystalline surface which is epitaxially compatible with M*N; depositing a layer of single crystal M*N over the surface of the substrate; and removing the substrate from the layer of single crystal M*N, e. g. , with an etching agent which is applied to the substrate to remove same, to yield the layer of single crystal M*N as said single crystal M*N article. The bulk single crystal M*N article is suitable for use as a substrate for the fabrication of microelectronic structures thereon, to produce microelectronic devices comprising bulk single crystal M*N substrates, or precursor structures thereof.

Semiconductor Structure And Method Of Manufacture

US Patent:
7888746, Feb 15, 2011
Filed:
Dec 15, 2006
Appl. No.:
11/611515
Inventors:
Michael Albert Tischler - Phoenix AZ, US
Assignee:
HVVi Semiconductors, Inc. - Phoenix AZ
International Classification:
H01L 29/76
H01L 29/94
H01L 31/062
H01L 31/113
H01L 31/119
US Classification:
257379, 257347, 257E29287, 438 21, 438704, 438149, 438295
Abstract:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a semiconductor structure having a silicon-on-insulator (SOI) substrate and a dielectric region is disclosed. The dielectric region is adjacent to the active layer of the SOI substrate and the dielectric region includes a portion of a buried oxide (BOX) layer of the SOI substrate. At least a portion of the dielectric region extends from a surface of the active layer of the SOI substrate to a depth of at least about three microns or greater below the surface of the active layer. Other embodiments are described and claimed.

Semiconductor Structure And Method Of Manufacture

US Patent:
7998829, Aug 16, 2011
Filed:
Dec 9, 2008
Appl. No.:
12/330756
Inventors:
Michael Albert Tischler - Phoenix AZ, US
Assignee:
HVVi Semiconductors, Inc. - Phoenix AZ
International Classification:
H01L 21/76
US Classification:
438424, 438425, 438435, 257E2154, 257E21545, 257E21564
Abstract:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a method includes removing a portion of a semiconductor material using an electrochemical etch to form a first cavity, a second cavity, wherein the first cavity is isolated from the second cavity, a first protrusion is between the first cavity and the second cavity, and the semiconductor material comprises silicon. The method further includes performing a thermal oxidation to convert a portion of the silicon of the semiconductor material to silicon dioxide and forming a first dielectric material over the first cavity, over the second cavity, over at least a portion of the semiconductor material, and over at least a portion of the first protrusion. Other embodiments are described and claimed.

Semiconductor Structure And Method Of Manufacture

US Patent:
8048760, Nov 1, 2011
Filed:
Jul 9, 2010
Appl. No.:
12/833180
Inventors:
Bishnu Prasanna Gogoi - Scottsdale AZ, US
Michael Albert Tischler - Phoenix AZ, US
Assignee:
HVVi Semiconductors, Inc. - Phoenix AZ
International Classification:
H01L 29/06
H01L 21/764
H01L 21/768
US Classification:
438422, 438421, 438411, 438433, 438434, 257506, 257510, 257522, 257634, 257E2902, 257E21573, 257E21581
Abstract:
In various embodiments, semiconductor structures and methods to manufacture these structures are disclosed. In one embodiment, a structure includes a dielectric material and a void below a surface of a substrate. The structure further includes a doped dielectric material over the dielectric material, over the first void, wherein at least a portion of the dielectric material is between at least a portion of the substrate and at least a portion of the doped dielectric material. Other embodiments are described and claimed.

Possible Relatives

David L Tischler  Debra R Tischler  Daniel Tischler  Douglas W Tischler  Edward A Tischler  Frederick Tischler  George F Tischler  Michael C Last  Michael C Johnson  Michael F Stamps 

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