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Michael W Wiemer, 461726 Dorrance Dr, San Jose, CA 95125

Known as:
Michael West Wiemer Michael Te Wiemer
Related to:
Marguerite M Wiemer Francis S Wiemer

Michael Wiemer Phones & Addresses

1726 Dorrance Dr, San Jose, CA 95125    650-3879614   

Campbell, CA   

Los Altos, CA   

Hillsboro, OR   

Oro Valley, AZ   

Stanford, CA   

Tualatin, OR   

Santa Clara, CA   

Social networks

Michael W Wiemer

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Work

Company: Solar junction Jul 2007 Position: Vice president, device development and co-founder

Education

Degree: Doctorates, Doctor of Philosophy School / High School: Stanford University 2001 to 2017 Specialities: Electrical Engineering, Philosophy

Skills

Semiconductors • Physics • Photovoltaics • R&D • Start Ups • Optics • Electrical Engineering • Entrepreneurship • Venture Capital • Business Strategy • Product Management • Materials Science • Leadership • Engineering Management • Strategic Partnerships • Mergers and Acquisitions • Nanotechnology • Electronics • Corporate Development • Laser • Simulations • Cross Functional Team Leadership • Mems • Research and Development • Fiber Optics • Characterization • Semiconductor Industry • Design of Experiments • Public Speaking • Solar Energy • Sensors • Manufacturing • Matlab • Cleantech • Thin Films • Failure Analysis • Testing • Photonics

Languages

English

Industries

Consumer Electronics
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Mentions for Michael W Wiemer

Michael Wiemer resumes & CV records

Resumes

Michael Wiemer Photo 23

Vice President Engineer And Chief Technology Officer And Co-Founder

Location:
1726 Dorrance Dr, San Jose, CA 95125
Industry:
Consumer Electronics
Work:
Solar Junction since Jul 2007
Vice President, Device Development and Co-Founder
Education:
Stanford University 2001 - 2017
Doctorates, Doctor of Philosophy, Electrical Engineering, Philosophy Stanford University 2000 - 2001
Masters, Electrical Engineering Stanford University 1996 - 2000
Bachelors, Electrical Engineering Tualatin High School
Skills:
Semiconductors, Physics, Photovoltaics, R&D, Start Ups, Optics, Electrical Engineering, Entrepreneurship, Venture Capital, Business Strategy, Product Management, Materials Science, Leadership, Engineering Management, Strategic Partnerships, Mergers and Acquisitions, Nanotechnology, Electronics, Corporate Development, Laser, Simulations, Cross Functional Team Leadership, Mems, Research and Development, Fiber Optics, Characterization, Semiconductor Industry, Design of Experiments, Public Speaking, Solar Energy, Sensors, Manufacturing, Matlab, Cleantech, Thin Films, Failure Analysis, Testing, Photonics
Languages:
English

Publications & IP owners

Us Patents

Silicon Compatible Integrated Light Communicator

US Patent:
7875522, Jan 25, 2011
Filed:
Mar 28, 2008
Appl. No.:
12/057959
Inventors:
Pawan Kapur - Palo Alto CA, US
Michael West Wiemer - Los Altos CA, US
Assignee:
The Board of Trustees of the Leland Stanford Junior University - Palo Alto CA
International Classification:
H01L 21/331
US Classification:
438341, 438479, 438481, 438492, 257E21086
Abstract:
Various methods and devices are implemented using efficient silicon compatible integrated light communicators. According to one embodiment of the present invention, a semiconductor device is implemented for communicating light, such as by detecting, modulating or emitting light. The device has a silicon-seeding location, an insulator layer and a second layer on the insulator layer. The second layer includes a silicon-on-insulator region and an active region surrounded by the silicon-on-insulator region and connected to the silicon-seeding location. The active region includes a single-crystalline germanium-based material that extends from the silicon-seeding location through a passageway with a cross-sectional area that is sufficiently small to mitigate crystalline growth defects. The single-crystalline germanium-based material is physically coupled to the insulating layer such that the insulating layer introduces a high tensile strain to the germanium-based material, and a more specific aspect is directed to an SOI implementation.

Functional Integration Of Dilute Nitrides Into High Efficiency Iii-V Solar Cells

US Patent:
2010031, Dec 23, 2010
Filed:
Jun 21, 2010
Appl. No.:
12/819534
Inventors:
Michael W. Wiemer - Campbell CA, US
Homan B. Yuen - Sunnyvale CA, US
Vijit A. Sabnis - Cupertino CA, US
Michael J. Sheldon - San Jose CA, US
Ilya Fushman - Palo Alto CA, US
Assignee:
Solar Junction Corp. - San Jose CA
International Classification:
H01L 31/0304
H01L 31/18
US Classification:
136255, 438 93, 257E31019
Abstract:
Tunnel junctions are improved by providing a rare earth-Group V interlayer such as erbium arsenide (ErAs) to yield a mid-gap state-assisted tunnel diode structure. Such tunnel junctions survive thermal energy conditions (time/temperature) in the range required for dilute nitride material integration into III-V multi-junction solar cells.

Multijunction Solar Cells Formed On N-Doped Substrates

US Patent:
2011011, May 19, 2011
Filed:
Nov 11, 2010
Appl. No.:
12/944439
Inventors:
Michael W. Wiemer - Campbell CA, US
Homan B. Yuen - Sunnyvale CA, US
Vijit A. Sabnis - Cupertino CA, US
Michael J. Sheldon - San Jose CA, US
Assignee:
Solar Junction Corporation - San Jose CA
International Classification:
H01L 31/06
US Classification:
136255
Abstract:
An “n-on-p” type multijunction solar cell structure is disclosed using an n-type substrate for the epitaxial growth of III-V semiconductor material, wherein a “p-on-n” tunnel junction diode is disposed between the substrate and one or more heteroepitaxial layers of III-V semiconductor materials.

Pseudomorphic Window Layer For Multijunction Solar Cells

US Patent:
2012021, Aug 30, 2012
Filed:
Feb 10, 2012
Appl. No.:
13/370500
Inventors:
Ferran Suarez Arias - San Jose CA, US
Michael West Wiemer - Campbell CA, US
Michael J. Sheldon - San Jose CA, US
Homan B. Yuen - Sunnyvale CA, US
Assignee:
Solar Junction Corporation - San Jose CA
International Classification:
H01L 31/0687
H01L 31/18
US Classification:
136255, 438 94, 257E3102
Abstract:
Photovoltaic cells with one or more subcells are provided with a wide band gap, pseudomorphic window layer of at least 15 nm in thickness and with an intrinsic material lattice constant that differs by at least 1% from an adjacent emitter layer. This window layer has a higher band gap than a window layer with substantially the same intrinsic material lattice constant as the adjacent emitter layer, which increases the light transmission through the window, thereby increasing the current generation in the solar cell. The quality of being pseudomorphic material preserves a good interface between the window and the emitter, reducing the minority carrier surface recombination velocity. A method is provided for building a wide band gap, pseudomorphic window layer of a photovoltaic cell that has an intrinsic material lattice constant that differs by at least 1% from the adjacent emitter layer.

Window Structure For Solar Cell

US Patent:
2012028, Nov 15, 2012
Filed:
May 10, 2011
Appl. No.:
13/104913
Inventors:
Michael West Wiemer - Campbell CA, US
Michael J. Sheldon - San Jose CA, US
Homan Yuen - Sunnyvale CA, US
Assignee:
Solar Junction Corporation - San Jose CA
International Classification:
H01L 31/0248
H01L 31/0216
H01L 31/0232
US Classification:
136256
Abstract:
A multilayer window structure for a solar cell comprises one or more layers where the bottom layer has an intrinsic material lattice spacing that is substantially the same as the emitter in the plane perpendicular to the direction of epitaxial growth. One or more upper layers of the window structure has progressively higher band gaps than the bottom layer and has intrinsic material lattice spacing is substantially different than the emitter intrinsic material lattice spacing.

Method For Making Semiconductor Light Detection Devices

US Patent:
2013010, May 2, 2013
Filed:
Oct 27, 2011
Appl. No.:
13/283379
Inventors:
Lan Zhang - Palo Alto CA, US
Ewelina N. Lucow - Mountain View CA, US
Onur Fidaner - Sunnyvale CA, US
Michael W. Wiemer - Campbell CA, US
Assignee:
Solar Junction Corporation - San Jose CA
International Classification:
H01L 31/18
H01L 31/0216
US Classification:
257437, 438 72, 257E31119
Abstract:
A semiconductor light detection device fabrication technique is provided in which the cap etch and anti-reflection coating steps are performed in a single, self-aligned lithography module.

High Efficiency Multijunction Solar Cells

US Patent:
2013011, May 16, 2013
Filed:
Dec 7, 2012
Appl. No.:
13/708791
Inventors:
Solar Juction Corporation - San Jose CA, US
Pranob Misra - Santa Clara CA, US
Michael J. Sheldon - Cortaro AZ, US
Homan B. Yuen - Santa Clara CA, US
Ting Liu - San Jose CA, US
Daniel Derkacs - Sunnyvale CA, US
Vijit Sabnis - Cupertino CA, US
Michael West Wiemer - Campbell CA, US
Ferran Suarez - San Jose CA, US
Assignee:
Solar Junction Corporation - San Jose CA
International Classification:
H01L 31/06
US Classification:
136244, 136255
Abstract:
Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

High Efficiency Multijunction Solar Cells

US Patent:
2013011, May 16, 2013
Filed:
Nov 15, 2012
Appl. No.:
13/678389
Inventors:
Solar Junction Corporation - San Jose CA, US
Pranob Misra - Santa Clara CA, US
Michael J. Sheldon - Cortaro AZ, US
Homan B. Yuen - Santa Clara CA, US
Ting Liu - San Jose CA, US
Daniel Derkacs - Sunnyvale CA, US
Vijit Sabnis - Cupertino CA, US
Michael West Wiemer - Campbell CA, US
Ferran Suarez - San Jose CA, US
Assignee:
Solar Junction Corporation - San Jose CA
International Classification:
H01L 31/078
H01L 31/18
US Classification:
136255, 438 74
Abstract:
Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

Possible Relatives

Diana L Wiemer  Donald G Wiemer  Hans G Wiemer  James D Wiemer  Jennifer C Wiemer  Joseph C Wiemer  Julie M Wiemer  Michael C Last  Michael C Johnson  Michael F Stamps 

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