Anwar A Mohammed, 723432 Valley Vista Dr, San Jose, CA 95148

6466113, Oct 15, 2002

Jan 21, 2000

09/489505

Anwar A. Mohammed - San Jose CA

Spectrian Corporation - Sunnyvale CA

H05K 118

333247, 257728, 361795

A printed circuit architecture includes a relatively thick, stiffening base of thermally and electrically conductive material, and a laminate of conductive layers including a printed circuit structure, interleaved with dielectric layers, disposed atop the base. The patterned conductive layers contain an integrated circuit structure that is configured to provide RF signaling, microstrip shielding, and digital and analog control signal leads, and DC power. Low inductance electrical connectivity among the conductive layers and also between conductive layers and the base is provided by a plurality of conductive bores. Selected bores are counter-drilled at the RF signaling layer and filled with insulating plugs, which prevent shorting of the RF signal trace layer to ground, during solder reflow connection of leads of circuit components to the RF signaling layer.

6681483, Jan 27, 2004

Apr 18, 2002

10/125221

Anwar A. Mohammed - San Jose CA

Remec, Inc. - Del Mar CA

H01K 310

29852, 29840, 29846, 333247, 257728, 361795

A printed circuit architecture includes a relatively thick, stiffening base of thermally and electrically conductive material, and a laminate of conductive layers including a printed circuit structure, interleaved with dielectric layers, disposed atop the base. The patterned conductive layers contain an integrated circuit structure that is configured to provide RF signaling, microstrip shielding, and digital and analog control signal leads, and DC power. Low inductance electrical connectivity among the conductive layers and also between conductive layers and the base is provided by a plurality of conductive bores. Selected bores are counter-drilled at the RF signaling layer and filled with insulating plugs, which prevent shorting of the RF signal trace layer to ground, during solder reflow connection of leads of circuit components to the RF signaling layer.

6747298, Jun 8, 2004

Jun 27, 2002

10/185350

Jayesh Bharathan - Santa Barbara CA
John Edmond - Cary NC
Mark Raffetto - Santa Barbara CA
Anwar Mohammed - San Jose CA
Peter S. Andrews - Greensboro NC
Gerald H. Negley - Hillsborough NC

Cree, Inc. - Durham NC

H01L 310328

257200, 257190, 257E21122, 257E33054, 438 22, 438 46, 438507

Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.

6888167, May 3, 2005

Jun 27, 2002

10/185252

Jayesh Bharathan - Santa Barbara CA, US
John Edmond - Cary NC, US
Mark Raffetto - Santa Barbara CA, US
Anwar Mohammed - San Jose CA, US
Peter S. Andrews - Greensboro NC, US
Gerald H. Negley - Hillsborough NC, US

Cree, Inc. - Durham NC
Cree Microwave, Inc. - Sunnyvale CA

H01L029/267

257 81, 257676

Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy.

7259033, Aug 21, 2007

Aug 17, 2004

10/920101

Jayesh Bharathan - Santa Barbara CA, US
John Edmond - Cary NC, US
Mark Raffetto - Santa Barbara CA, US
Anwar Mohammed - San Jose CA, US
Peter S. Andrews - Greensboro NC, US
Gerald H. Negley - Hillsborough NC, US

Cree, Inc. - Durham NC
Cree Microwave, LLC - Durham NC

H01L 21/00
H01L 21/50

438 26, 438 46, 438108

Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy.

7341175, Mar 11, 2008

Apr 27, 2004

10/832971

Jayesh Bharathan - Santa Barbara CA, US
John Edmond - Cary NC, US
Mark Raffetto - Santa Barbara CA, US
Anwar Mohammed - San Jose CA, US
Peter S. Andrews - Greensboro NC, US
Gerald H. Negley - Hillsborough NC, US

Cree, Inc. - Durham NC

B23K 1/06

2281101, 228245

Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.

7608860, Oct 27, 2009

Jul 2, 2007

11/772419

Jayesh Bharathan - Santa Barbara CA, US
John Edmond - Cary NC, US
Mark Raffetto - Santa Barbara CA, US
Anwar Mohammed - San Jose CA, US
Peter S. Andrews - Greensboro NC, US
Gerald H. Negley - Hillsborough NC, US

Cree, Inc. - Durham NC
Cree Microwave, LLC - Durham NC

H01L 29/267

257 81, 257E33062

Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy.

8013429, Sep 6, 2011

Jul 14, 2009

12/502440

Anwar A. Mohammed - San Jose CA, US
Soon Ing Chew - Milpitas CA, US
Alexander Komposch - Morgan Hill CA, US
Christian Andrada - Morgan Hill CA, US

Infineon Technologies AG - Neubiberg

H01L 23/495

257675, 257E23051

An air cavity package is manufactured by attaching a die to a surface of a copper heat sink, dispensing a bead of epoxy around a periphery of the heat sink surface after the die is attached to the copper heat sink so that the bead of epoxy generally surrounds the die and placing a ceramic window frame on the bead of epoxy. The epoxy is cured to attach a bottom surface of the ceramic window frame to the copper heat sink.