Nicholas J Giammarco12 Lena Ln, Newburgh, NY 12550

4595484, Jun 17, 1986

Dec 2, 1985

6/803190

Nicholas J. Giammarco - Newburgh NY
George A. Kaplita - New Windsor NY

International Business Machines Corporation - Armonk NY

C23C 1500

204298

Disclosed is a RIE apparatus wherein the anode (maintained at ground potential) is composed of a three-plate configuration and is disposed in parallel relationship with the cathode plate. The top and middle plates of the anode have small gas pump-out holes and are affixed to the chamber walls below the pump-out port to form a high pressure baffle chamber. A gas ring interposed between the top and middle anode plates permits uniform diffusion of etchant species into the reaction volume. The third plate (plasma potential reduction plate -PPRP) of the anode is flexibly attached to the middle plate and contains a large number of large holes compared to those in the top and middle plates. The minimum size of the holes in the PPRP is twice the plasma dark space to permit the plasma formed in the reaction volume below the PPRP to be sustained thereabove, thereby increasing the ratio of the grounded area to the cathode area to which the plasma is exposed. Consequently, the DC potential is increased and the plasma potential decreased resulting in an enlargement of the wafer load window, elimination of black silicon formation, increasing uniformity of etching across the entire cathode surface and better etch selectivity.

4871630, Oct 3, 1989

Jul 31, 1987

7/079990

Nicholas J. Giammarco - Newburgh NY
Alexander Gimpelson - Allston MA
George A. Kaplita - New Windsor NY
Alexander D. Lopata - Fishkill NY
Anthony F. Scaduto - Newburgh NY
Joseph F. Shepard - Hopewell Junction NY

International Business Machines Corporation - Armonk NY

G03C 500

430 14

Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask of photosensitive material having an opening of a minimum size dictated by the limits of lithography is formed on a substrate. Reduction in the image size is achieved by establishing sidewalls to the interior vertical surfaces of the opening by depositing a conformal layer, followed by anisotropic etching. The dimension of the opening is reduced by the combined thickness of the two opposite insulator sidewalls. In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lighography, per se, is formed.

4726879, Feb 23, 1988

Sep 8, 1986

6/904437

James A. Bondur - Walden NY
Nicholas J. Giammarco - Newburgh NY
Thomas A. Hansen - Poughkeepsie NY
George A. Kaplita - New Windsor NY
John S. Lechaton - Wappingers Falls NY

International Business Machines Corporation - Armonk NY

H01L 21308

156643

Disclosed is a process for etching semiconductor materials with a high etch rate against an insulator mask using a novel etchant gas mixture. The mixture consists of a chlorocarbon (e. g. , CCl. sub. 2 F. sub. 2, CCl. sub. 4 or CCl. sub. 3 F), SF. sub. 6, O. sub. 2 and an inert gas (e. g. He). The preferred gas mixture contains 2/1 ratio of the chlorocarbon to SF6 and the following composition: 1-4% of SF. sub. 6, 3-10% of O. sub. 2, 74-93% of He and 3-10% of chlorocarbon. The etch rate of silicon (or silicide) against an oxide mask using this etchant gas mixture under normal etching conditions is high, on the order of 30-40. An impressive feature of the process is shape control of trenches by mere manipulation of the RIE system power.

4707218, Nov 17, 1987

Oct 28, 1986

6/924223

Nicholas J. Giammarco - Newburgh NY
Alexander Gimpelson - Allston MA
George A. Kaplita - New Windsor NY
Alexander D. Lopata - Fishkill NY
Anthony F. Scaduto - Newburgh NY
Joseph F. Shepard - Hopewell Junction NY

International Business Machines Corporation - Armonk NY

H01L 21306
B44C 122
C03C 1500
C03C 2506

156643

Disclosed is a process for reducing lithographic image size for integrated circuit manufacture. A mask of photosensitive material having an opening of a minimum size dictated by the limits of lithography is formed on a substrate. Reduction in the image size is achieved by establishing sidewalls to the interior vertical surfaces of the opening by depositing a conformal layer, followed by anisotropic etching. The dimension of the opening is reduced by the combined thickness of the two opposite insulator sidewalls. In a specific direct application of the disclosed process, a photomask/stencil having a pattern of openings of a minimum size smaller than possible by lithography, per se, is formed.