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Xiaowei LiPalo Alto, CA

Related to:
Xuan Li 30 Yichuan Le 52 Beihan Wang 52 Yongmin Zhang 57 Selina Zhang

Xiaowei Li Phones & Addresses

Palo Alto, CA   

Mountain View, CA   

Work

Company: Amazon Sep 2012 Position: Sde intern

Education

School / High School: Vanderbilt University- Nashville, TN 2008 Specialities: PhD in Computer Science

Skills

Language: 5 year experience in Java and C/C++; Familiar with Python/Perl • HTML5 • JavaScript • CSS • PHP/JSP • Ruby • SQL • XML/JSON. Framework and library: Java EE (Spring) • Django • Rails; C++ STL • JQuery • Node.js; Tool and platform: Eclipse • Visual Studio • Matlab • NS2; Amazon AWS (S3 • SQS • DynamoDB • Elastic MapReduce) • Google App Engine. OS and database: Unix/Linux • Mac OS • Windows; MySQL • Berkeley DB;

Ranks

Licence: California - Active Date: 2012
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Mentions for Xiaowei Li

Career records & work history

Lawyers & Attorneys

Xiaowei Li Photo 1

Xiaowei Li, San Jose CA - Lawyer

Address:
Law Office of Xiaowei Li
333 W. Santa Clara St, Ste 805, San Jose, CA 95113
408-3205275 (Office)
Licenses:
California - Active 2012
Education:
Santa Clara Univ SOL
Languages:
Mandarin
Xiaowei Li Photo 2

Xiaowei Li - Lawyer

Specialties:
Business, Litigation
ISLN:
1000022328
Admitted:
2012
University:
Santa Clara Univ SOL; Santa Clara CA

Xiaowei Li resumes & CV records

Resumes

Xiaowei Li Photo 33

Dickinson Award Committee

Location:
Stanford, CA
Industry:
Non-Profit Organization Management
Work:
Sepm Jan 2017 - Dec 2018
Council Member Sepm 2016 - Dec 2018
Carbonate Research Group Committee Member Sepm 2016 - Dec 2018
Dickinson Award Committee American Association of Petroleum Geologists 2016 - Dec 2018
Stanford Student Chapter President Shell Jul 2015 - Oct 2015
Post-Grad Research Intern Stanford University Jul 2015 - Oct 2015
Phd Graduate Student Bp Jun 2013 - Aug 2013
Integrated Exploration Geologist Intern
Education:
Stanford University 2014 - 2019
Doctorates, Doctor of Philosophy, Philosophy
Skills:
Geology, Petroleum Geology, Sedimentology, Earth Science, Field Work, Geological Mapping, Science, Research, Stratigraphy, Sequence Stratigraphy, Structural Geology, Petrel, Diagenesis
Interests:
Cooking
Traveling
Rocks
Reading
Surfing
Hiking
Tango
Languages:
English
Mandarin
Xiaowei Li Photo 34

Software Engineer

Location:
701 south Santa Fe St, Pauls Valley, OK 73075
Industry:
Transportation/Trucking/Railroad
Work:
Waymo
Software Engineer Google Jun 2013 - Sep 2018
Software Engineer Vanderbilt University Aug 2008 - May 2013
Research Assistant Amazon Sep 2012 - Nov 2012
Sde Intern Mozilla Jun 2012 - Aug 2012
Security Research Intern Beijing University of Posts and Telecommunications Jun 2006 - May 2008
Research Assistant Wireless Communication Institute China Mobile Jan 2007 - Jul 2007
Software Engineer Intern
Education:
Vanderbilt University 2008 - 2012
Skills:
Linux, Matlab, Java, C++, Algorithms, Python, Mysql, Amazon Web Services, Latex, Sql, Eclipse, Ruby, Machine Learning, Java Enterprise Edition, Javascript, Php, Perl, Html 5, Css, Xml, Json, Jsp, Spring, Django, Ruby on Rails, Jquery, Node.js, Visual Studio, Ns2, Unix, Mac Os X, Windows, Google Apps, Berkeley Db
Interests:
Security and Privacy
Mobile Computing
Health Information Technology
Cloud Computing
Large Scale Distributed System
Software Engineering
Xiaowei Li Photo 35

Engineering Technician Lead

Location:
San Francisco, CA
Industry:
Computer Networking
Work:
Google 2009 - Aug 2012
Software Engineer Apple 2009 - Aug 2012
Engineering Technician Lead Google May 2007 - Aug 2007
Software Engineer Intern Microsoft May 2005 - Aug 2005
Research Intern Microsoft May 2004 - Aug 2004
Visiting Student
Education:
University of North Carolina at Chapel Hill 2006 - 2008
Masters, Computer Science Beijing Institute of Technology
No.1 High School In Nanyang
Skills:
Python, Machine Learning, Hadoop, Computer Vision, Computer Science, Distributed Systems, C++, Software Engineering, Data Analysis, Algorithms, Mapreduce, Java, C, Scalability, Linux
Interests:
Social Services
Children
Civil Rights and Social Action
Education
Environment
Poverty Alleviation
Science and Technology
Arts and Culture
Xiaowei Li Photo 36

Dickinson Award Committee

Location:
Stanford, CA
Work:

Dickinson Award Committee
Xiaowei Li Photo 37

Xiaowei Li

Xiaowei Li Photo 38

Xiaowei Li

Xiaowei Li Photo 39

Xiaowei Li

Xiaowei Li Photo 40

Investment Analyst At Gcs Capital

Position:
Investment Analyst at GCS Capital
Location:
Other
Industry:
Venture Capital & Private Equity
Work:
GCS Capital - Hong Kong since Aug 2011
Investment Analyst
Education:
Stanford University 2009 - 2011
MA Peking University 2004 - 2008
BA, International Relations

Publications & IP owners

Us Patents

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

US Patent:
7682940, Mar 23, 2010
Filed:
Sep 14, 2005
Appl. No.:
11/227974
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/20
H01L 21/36
US Classification:
438478, 438482, 438488, 438719, 438753, 257E2109, 257E21115, 257E21461, 257E21214, 257E21215
Abstract:
In a first aspect, a first method of forming an epitaxial film on a substrate is provided. The first method includes (a) providing a substrate; (b) exposing the substrate to at least a silicon source so as to form an epitaxial film on at least a portion of the substrate; and (c) exposing the substrate to HCl and Cl2 so as to etch the epitaxial film and any other films formed during step (b). Numerous other aspects are provided.

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

US Patent:
7732305, Jun 8, 2010
Filed:
Jul 28, 2006
Appl. No.:
11/494903
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/20
US Classification:
438478, 438488, 438719, 438753, 257E23116, 257E23128, 257E21502
Abstract:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

US Patent:
7960256, Jun 14, 2011
Filed:
May 12, 2010
Appl. No.:
12/779022
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
H01L 21/20
H01L 21/36
US Classification:
438478, 438482, 438488, 438719, 438753, 257E31045, 257E29155, 257E23122, 257E21054, 257E21055, 257E21182
Abstract:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Independent Radiant Gas Preheating For Precursor Disassociation Control And Gas Reaction Kinetics In Low Temperature Cvd Systems

US Patent:
7976634, Jul 12, 2011
Filed:
Nov 8, 2007
Appl. No.:
11/937388
Inventors:
David Keith Carlson - San Jose CA, US
Satheesh Kuppurao - San Jose CA, US
Howard Beckford - San Jose CA, US
Herman Diniz - Fremont CA, US
Kailash Kiran Patalay - Santa Clara CA, US
Brian Hayes Burrows - San Jose CA, US
Jeffrey Ronald Campbell - San Francisco CA, US
Xiaowei Li - Austin TX, US
Errol Antonio Sanchez - Tracy CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/452
C23C 16/46
C23C 16/02
C23F 1/00
H01L 21/306
C23C 16/06
US Classification:
118724, 1563451
Abstract:
A method and apparatus for delivering precursor materials to a processing chamber is described. The apparatus includes a gas distribution assembly having multiple gas delivery zones. Each zone may include a plenum having an inlet for receiving a precursor gas and at least one source of non-thermal energy, such as an infrared light source. The at least one source of non-thermal energy is may be varied to control the intensity of wavelengths from the infrared light source.

Use Of Cl2 And/Or Hcl During Silicon Epitaxial Film Formation

US Patent:
8586456, Nov 19, 2013
Filed:
May 31, 2011
Appl. No.:
13/149865
Inventors:
Zhiyuan Ye - Cupertino CA, US
Yihwan Kim - Milpitas CA, US
Xiaowei Li - Sunnyvale CA, US
Ali Zojaji - Santa Clara CA, US
Nicholas C. Dalida - Fremont CA, US
Jinsong Tang - Santa Clara CA, US
Xiao Chen - San Jose CA, US
Arkadii V. Samoilov - Sunnyvale CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/24
H01L 21/20
H01L 21/36
US Classification:
438488, 438719, 438753, 257E23116, 257E23128, 257E21502, 257E2109
Abstract:
In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

Comparing Map Builds Using Hierarchical Tree Representations

US Patent:
2020022, Jul 16, 2020
Filed:
Jan 16, 2019
Appl. No.:
16/249788
Inventors:
- San Francisco CA, US
Xiaowei Li - San Carlos CA, US
Vitaliy Stulski - Los Gatos CA, US
Daniel Wolf - Menlo Park CA, US
International Classification:
G06F 16/28
G01C 21/32
G06F 16/22
G06F 16/29
Abstract:
A computing system uses tree data structures summarizing map builds to identify differences between map builds. The tree data structures include nodes summarizing portions of geographic regions of map builds. Responsive to a request to compare a first and second map build, the computing system accesses the tree data structures for the first and second map builds and identifies differences by traversing the tree data structures in lockstep and comparing the hash values for corresponding nodes in the tree data structures. The computing system traverses the tree data structures by identifying nodes that are different between the tree data structures until one or more bottom-level nodes are identified as different. The computing system identifies map features corresponding to the identified bottom-level nodes as different and transmits the identified map features to a client device associated with the request.

Independent Radiant Gas Preheating For Precursor Disassociation Control And Gas Reaction Kinetics In Low Temperature Cvd Systems

US Patent:
2017036, Dec 21, 2017
Filed:
Mar 3, 2014
Appl. No.:
14/195423
Inventors:
- Santa Clara CA, US
Satheesh KUPPURAO - San Jose CA, US
Howard BECKFORD - Santa Clara CA, US
Herman DINIZ - Fremont CA, US
Kailash Kiran PATALAY - Santa Clara CA, US
Brian Hayes BURROWS - San Jose CA, US
Jeffery Ronald CAMPBELL - Mountain View CA, US
Zuoming ZHU - Sunnyvale CA, US
Xiaowei LI - Austin TX, US
Errol Antonio SANCHEZ - Tracy CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
C23C 16/455
C23C 16/22
C23C 16/452
H01L 21/02
Abstract:
In one embodiment, a gas distribution assembly includes an injection block having at least one inlet to deliver a precursor gas to a plurality of plenums from at least two gas sources, a perforated plate bounding at least one side of each of the plurality of plenums, at least one radiant energy source positioned within each of the plurality of plenums to provide energy to the precursor gas from one or both of the at least two gas sources and flow an energized gas though openings in the perforated plate and into a chamber, and a variable power source coupled to each of the radiant energy sources positioned within each of the plurality of plenums.

Method And System For Regional Phase Unwrapping With Pattern-Assisted Correction

US Patent:
2017024, Aug 24, 2017
Filed:
Dec 28, 2015
Appl. No.:
14/980215
Inventors:
- Milpitas CA, US
Xuan Zhao - Milpitas CA, US
Xiaowei Li - Milpitas CA, US
International Classification:
G01B 9/02
G01B 11/06
Abstract:
A wafer metrology system includes an interferometer sub-system and a controller. The interferometer sub-system is configured to generate an interferogram with an intensity map that corresponds to a modulated representation of a wafer surface. Further, the interferometer sub-system includes a detector configured to capture the interferogram. The controller includes one or more processors configured to generate a wrapped phase map of the interferogram, define patterns associated with features on the wafer, and correct phase discontinuities by applying a phase unwrapping procedure to the wrapped phase map to generate an unwrapped phase map and correcting phase discontinuities in the unwrapped phase map based on the patterns, or by combining phase unwrapping and correction in a unified step. Further, the patterns comprise two or more structures such that a portion of the unwrapped phase map associated with structures of the same type is continuous across borders separating structures of the same type.

Possible Relatives

Cynthia M Li  David Li  Dawei Li  Dayu W Li  De Li  Dean Li  Da Li  Xiaowei I Liu  Xiaowei Xu  Xiaowei Yin 

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