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Peng F Fu, 59Midland, MI

Known as:
Peng Fei Fu F Pengfei Feifu Peng Fu Fei Fu Peng-Fei Fu Peng Fei Fu Pengfei Fu F Peng Peng Fu Pengfei Fu F U Pengfei Pengfei F Fu
Related to:
Yingle Zhu 70

Peng Fu Phones & Addresses

Midland, MI   

Evanston, IL   

Skokie, IL   

Norman, OK   

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Publications & IP owners

Us Patents

Method Of Nanopatterning, A Resist Film For Use Therein, And An Article Including The Resist Film

US Patent:
2007012, May 31, 2007
Filed:
Nov 30, 2005
Appl. No.:
11/290866
Inventors:
Peng Fu - Midland MI, US
Lingjie Guo - Ann Arbor MI, US
International Classification:
G03C 5/00
US Classification:
430311000
Abstract:
A method of nanopatterning includes the steps of providing a resist film () and forming a pattern in the resist film (). The resist film () includes a copolymer consisting of an organosilicone component and an organic component. An article () includes a substrate () and the resist film () disposed on the substrate (). The copolymer of the organosilicone component and the organic component is sufficiently elastic, due to the presence of the organosilicone component, to be capable of resisting fracture and delamination during mold release. Furthermore, during pattern formation, the copolymer develops relatively low surface energy at an interface with the surface of a mold, as compared to conventional polymeric materials, and preferentially adheres to the substrate () rather than the mold, which provides for relatively easy mold release. The presence of the organosilicone component in the copolymer also allows the resist film () to exhibit excellent resistance to oxygen plasma etching.

Material Composition For Nano-And Micro-Lithography

US Patent:
2007019, Aug 23, 2007
Filed:
Jun 1, 2005
Appl. No.:
10/598943
Inventors:
Peng Fu - Midland MI, US
Lingjie Guo - Ann Arbor MI, US
Xing Cheng - West Lafayette IN, US
Assignee:
DOW CORNING CORPORATION - Midland MI
THE REGENTS OF THE UNIVERSITY OF MICHIGAN - Ann Arbor MI
International Classification:
C08G 59/68
US Classification:
427512000, 522001000, 522031000
Abstract:
A material composition, which is used as a liquid resist, includes a first component comprising a monomer portion and at least one cationically polymerizable functional group, and a crosslinker reactive with the first component and comprising at least three cationically polymerizable functional groups. The material composition also includes a cationic photoinitiator. Upon exposure to UV light, the material composition crosslinks via cure to form a cured resist film that is the reaction product of the first component, the crosslinker, and the cationic photoinitiator. An article includes a substrate layer and a resist layer formed on the substrate layer from the material composition.

Method Of Nanopatterning, A Cured Resist Film Use Therein, And An Article Including The Resist Film

US Patent:
2009020, Aug 13, 2009
Filed:
Nov 30, 2005
Appl. No.:
11/916003
Inventors:
Peng fei Fu - Midland MI, US
Lingjie Jay Guo - Ann Arbor MI, US
International Classification:
B32B 1/04
B28B 11/08
US Classification:
4281951, 264293
Abstract:
A method of nanopatterning includes the steps of providing the resist film () and forming the pattern in the resist film (). The resist film () includes an organosilicone compound having at least two vinyl groups, an organosilicone crosslinker different from the organosilicone compound, a catalyst, and a catalyst inhibitor. The cured resist film () includes the reaction product of the organosilicone compound having at least two vinyl groups and the organosilicone crosslinker different from the organosilicone compound, in the presence of the catalyst and the catalyst inhibitor. The article () includes a substrate (), and the cured resist film () is disposed on the substrate (). Due to the presence of the catalyst inhibitor in the resist film (), the resist film () may be manipulated for hours at room temperature without curing. At the same time, the resist film () cures in a sufficiently short period of time to be commercially valuable.

Possible Relatives

Frances Y Fu  Peng F Wu 

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