Peng Chaoju Peng, 5310120 Tularosa Pass, Austin, TX 78726

8239794, Aug 7, 2012

Sep 29, 2009

12/568985

Bhavna Agrawal - Milton NY, US
David J. Hathaway - Underhill VT, US
Pravin P. Kamdar - Leander TX, US
Peng Peng - Essex Junction VT, US
David W. Winston - Asheville NC, US

International Business Machines Corporation - Armonk NY

G06F 17/50
G06F 17/10

716106, 716104, 716105, 716108, 716111, 716115, 716120, 716136, 703 2, 703 13, 703 14

Disclosed are embodiments of a system and of an associated method for estimating the leakage current of an electronic circuit. The embodiments analyze a layout of an electronic circuit in order to identify all driven and non-driven nets within the electronic circuit, to identify all of the driven net-bounded partitions within the electronic circuit (based on the driven and non-driven nets), and to identify, for each driven net-bounded partition, all possible states of the electronic circuit that can leak. Then, using this information, the embodiments estimate the leakage current of the electronic circuit. This is accomplished by first determining, for each state of each driven net-bounded partition, a leakage current of the driven net-bounded partition and a probability that the state will occur in the driven net-bounded partition during operation of the electronic circuit. Then, for each state of each driven net-bounded partition, the leakage current of the driven net-bounded partition and the state probability are multiplied together. The results are then aggregated.

7487480, Feb 3, 2009

May 12, 2008

12/118857

Bhavna Agrawal - Milton NY, US
David J. Hathaway - Underhill VT, US
Peng Peng - Essex Junction VT, US

International Business Machines Corporation - Armonk NY

G06F 17/50
G06F 17/17
G06F 17/11

716 5, 703 2, 703 16

A method of estimating a leakage for a plurality of transistors in an integrated circuit that accounts for narrow channel effects includes determining an expected total leaking transistor width for the collection; determining an expected total number of leaking transistors for the collection; determining an average width of a leaking transistor from the expected total leaking transistor width and expected total number of leaking transistors; estimating a leakage for a transistor of the average width; and determining the estimated leakage for the collection of transistors by multiplying the leakage for a transistor of the average width by the expected total number of leaking transistors for the collection.