BackgroundCheck.run
Search For

Peng Zhang, 5235 W 33Rd St UNIT 32B, New York, NY 10001

Related to:
Jialin Q Zhang Chi Zhang Zhang Di 44

Peng Zhang Phones & Addresses

New York, NY   

West Lebanon, NH   

Hanover, NH   

35 W 33Rd St APT 32B, New York, NY 10001   

Get Report
Control this profile

Mentions for Peng Zhang

Peng Zhang resumes & CV records

Resumes

Peng Zhang Photo 35

Peng Zhang - Elmhurst, NY

Work:
Thakur Digital May 2014 to 2000
Photographer (part time) United Inc. - Manhattan, NY Mar 2014 to Jul 2014
Cooperation Trainer (full time) Buffalo Used Furniture - Buffalo, NY Jun 2013 to Feb 2014
Individual Founder (part time) Campus Dining & Shop - Buffalo, NY Sep 2012 to Dec 2013
Campus Dining Attendant (part time) Social Democrats, USA - Washington, DC Aug 2013 to Aug 2013
Volunteer Photographer Rich Rose Shoes Factory Jan 2010 to Dec 2010
Production Manager (full time) Wan Shun Shoes Store Jun 2009 to Dec 2009
Sales Representative (full time)
Education:
UNIVERSITY AT BUFFALO, THE STATE UNIVERSITY OF NEW YORK - Buffalo, NY 2011 to 2013
Bachelor of Science in Business Administration
Skills:
Microsoft Office Word, Excel, PowerPoint, Access, Photoshop, Photography, Marketing research and Marketing analysis, Organization and leadership, Social Media
Peng Zhang Photo 36

Peng Zhang - Norwalk, CT

Work:
Dragon Gate Investment Partners - New York, NY Dec 2012 to Apr 2013
Business Development Intern Executive-In-Residence Programs - New York, NY Jan 2011 to May 2011
Business Consultant Industrial and Commercial Bank of China New York Branch - New York, NY Jan 2010 to Feb 2010
Intern Industrial and Commercial Bank of China Guangzhou Branch - Guangzhou, CHINA Jul 2005 to Dec 2008
Client Manager
Education:
St. John's University - Queens, NY 2009 to 2012
Master of Business Administration in Finance Hunan University of Commerce Sep 2001 to Jun 2005
Bachelor in Finance
Skills:
Fluent in Mandarin(Chinese); Intermediate in Cantonese(Chinese); Familiar with Excel, Word, PowerPoint; Experienced in Fact Set & Bloomberg Research

Publications & IP owners

Us Patents

Process Solutions Containing Surfactants

US Patent:
8227395, Jul 24, 2012
Filed:
Jul 29, 2010
Appl. No.:
12/846369
Inventors:
Peng Zhang - Hillsdale NJ, US
Danielle Megan King Curzi - San Francisco CA, US
Leslie Cox Barber - Cave Creek AZ, US
Assignee:
Air Products and Chemicals, Inc. - Allentown PA
International Classification:
C11D 1/00
US Classification:
510175, 510176, 134 13
Abstract:
Process solutions comprising one or more surfactants are used to reduce the number of defects in the manufacture of semiconductor devices. In certain preferred embodiments, the process solution of the present invention may reduce post-development defects such as pattern collapse when employed as a rinse solution either during or after the development of the patterned photoresist layer. Also disclosed is a method for reducing the number of pattern collapse defects on a plurality of photoresist coated substrates employing the process solution of the present invention.

Curable Formulations For Forming Low-K Dielectric Silicon-Containing Films Using Polycarbosilazane

US Patent:
2023009, Mar 30, 2023
Filed:
Oct 31, 2022
Appl. No.:
17/977619
Inventors:
- Paris, FR
- Fremont CA, US
Peng ZHANG - Montvale NJ, US
Fan QIN - Bear DE, US
Gennadiy ITOV - Flemington NJ, US
Fabrizio MARCHEGIANI - Wilmington DE, US
Thomas J. LARRABEE - Middletown DE, US
Venkateswara R. PALLEM - Hockessin DE, US
International Classification:
C09D 183/14
Abstract:
A method of forming a gap filling on a substrate, the substrate having gaps formed therein, comprises: producing a gap filling polycarbosilazane polymer or oligomer by a polymerization of a reaction mixture of carbosilanes with amines; forming a solution containing the gap filling polycarbosilazane polymer or oligomer; and contacting the solution with the substrate via a spin-on coating, spray coating, dip coating, or slit coating technique to fill the gaps in the substrate forming the silicon and carbon containing gap filling, wherein a concentration of the gap filling polycarbosilazane polymer or oligomer in the solution ranges from 1 to 60 wt %.

Si-Containing Film Forming Precursors And Methods Of Using The Same

US Patent:
2021039, Dec 23, 2021
Filed:
Aug 23, 2021
Appl. No.:
17/409229
Inventors:
- Paris, FR
Peng ZHANG - Montvale NJ, US
Antonio SANCHEZ - Tsukuba, JP
Manish KHANDELWAL - Somerset NJ, US
Gennadiy ITOV - Flemington NJ, US
Reno PESARESI - , US
Grigory NIKIFOROV - Easton PA, US
David ORBAN - Hampton NJ, US
International Classification:
C23C 16/455
H01L 21/02
C01B 21/088
C23C 16/515
C23C 16/40
C23C 16/34
C23C 16/30
C01B 21/087
C07F 7/02
Abstract:
Methods for producing halosilazane comprise halogenating a hydrosilazane with a halogenating agent to produce the halosilazane, the halosilazane having a formulawherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′]; further wherein each R′ of the [SiR′] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [—NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, provided that when c=0, d≠0; or d=0, c≠0.

Si-Containing Film Forming Precursors And Methods Of Using The Same

US Patent:
2021022, Jul 22, 2021
Filed:
Mar 10, 2021
Appl. No.:
17/197895
Inventors:
- Paris, FR
Peng ZHANG - Montvale NJ, US
Antonio SANCHEZ - Tsukuba, JP
Manish KHANDELWAL - Somerset NJ, US
Gennadiy ITOV - Flemington NJ, US
Reno PESARESI - Easton NJ, US
International Classification:
H01L 21/02
C07F 7/02
C01B 21/087
C01B 21/088
C23C 16/30
C23C 16/34
C23C 16/40
C23C 16/455
C23C 16/515
Abstract:
Methods are disclosed for forming a Silicon Metal Oxide film using a mono-substituted TSA precursor. The precursors have the formula: (SiH3)2N—SiH2-X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group.

Si-Containing Film Forming Precursors And Methods Of Using The Same

US Patent:
2019036, Nov 28, 2019
Filed:
Jul 16, 2019
Appl. No.:
16/513307
Inventors:
- Paris, FR
Peng ZHANG - Montvale NJ, US
Antonio SANCHEZ - Tsukuba, JP
Manish KHANDELWAL - Somerset NJ, US
Gennadiu ITOV - Flemington NJ, US
Reno PESARESI - Easton NJ, US
International Classification:
H01L 21/02
C01B 21/088
C23C 16/455
C23C 16/515
C07F 7/02
C23C 16/40
C23C 16/34
C23C 16/30
C01B 21/087
Abstract:
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH)N—SiH—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C-Csaturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.

Si-Containing Film Forming Precursors And Methods Of Using The Same

US Patent:
2019031, Oct 10, 2019
Filed:
Jun 21, 2019
Appl. No.:
16/449070
Inventors:
- Paris, FR
Peng Zhang - Montvale NJ, US
Antonio Sanchez - Tsukuba, JP
Manish Khandelwal - Somerset NJ, US
Gennadiy Itov - Flemington NJ, US
Reno Pesaresi - Easton PA, US
Grigory Nikiforov - Bridgewater NJ, US
David Orban - Hampton NJ, US
International Classification:
H01L 21/02
C01B 21/088
C23C 16/455
C23C 16/515
C07F 7/02
C23C 16/40
C23C 16/34
C23C 16/30
C01B 21/087
Abstract:
Methods for halogenation of a hydrosilazane include contacting the hydrosilazane with a halogenating agent in a liquid phase to produce the halosilazane having a formulawherein each a, b, c is independently 0 to 3; a+b+c=3; d is 0 to 2 and n≥1; wherein X is selected from a halogen atom selected from F, Cl, Br or I; each R is selected from H, a C-Clinear or branched, saturated or unsaturated hydrocarbyl group, or a silyl group [SiR′]; further wherein each R′ of the [SiR′] is independently selected from H, a halogen atom selected from F, Cl, Br or I, a C-Csaturated or unsaturated hydrocarbyl group, a C-Csaturated or unsaturated alkoxy group, or an amino group [—NRR] with each Rand Rbeing further selected from H or a C-Clinear or branched, saturated or unsaturated hydrocarbyl group.

Si-Containing Film Forming Compositions And Methods Of Making And Using The Same

US Patent:
2019004, Feb 7, 2019
Filed:
Mar 23, 2017
Appl. No.:
16/087464
Inventors:
- Fremont CA, US
- Paris, FR
Jean-Marc GIRARD - Versailles, FR
Antonio SANCHEZ - Tsukuba, JP
Peng ZHANG - Montvale NJ, US
Yang WANG - Garnet Valley PA, US
International Classification:
C09D 183/16
C08G 77/62
C07F 7/10
Abstract:
Si-containing film forming compositions are disclosed comprising a precursor having the formula [—NR—RRSi—(CH)—SiRR—]wherein n=2 to 400; R, R, R, R, and Rare independently H, a hydrocarbon group, or an alkylamino group, and provided that at least one of R, R, R, and Ris H; and R is independently H, a hydrocarbon group, or a silyl group. Exemplary precursors include, but are not limited to, [—NH—SiH—CH—SiH—], and [—N(SiH—CH—SiH)—SiH—CH—SiH—].

Post Chemical Mechanical Polishing Formulations And Method Of Use

US Patent:
2018025, Sep 6, 2018
Filed:
May 4, 2018
Appl. No.:
15/971535
Inventors:
- Billerica MA, US
Peng Zhang - Montvale NJ, US
Jun Liu - Brookfield CT, US
Steven Medd - Danbury CT, US
Jeffrey A. Bames - Danielsville PA, US
Shrane Ning Jenq - Hsinchu County, TW
International Classification:
C11D 11/00
H01L 21/02
C11D 3/30
C11D 1/62
C23G 1/20
C11D 7/32
C11D 3/00
Abstract:
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Possible Relatives

David Zhang  Dawei Zhang  Dazhi Zhang  De K Zhang  Da Q Zhang  Dachuan Zhang  Daijun Zhang  Peng Lee  Peng Lin  Peng Liu 

NOTICE: You may not use BackgroundCheck or the information it provides to make decisions about employment, credit, housing or any other purpose that would require Fair Credit Reporting Act (FCRA) compliance. BackgroundCheck is not a Consumer Reporting Agency (CRA) as defined by the FCRA and does not provide consumer reports.