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Peter S Winokur, 7814019 Loblolly Ter, Rockville, MD 20850

Peter Winokur Phones & Addresses

14019 Loblolly Ter, Rockville, MD 20850    301-5450371   

501 Falcon Park Ln, Rockville, MD 20850    301-2081327   

9922 Tanoan Dr NE, Albuquerque, NM 87111    505-8216866   

Silver Spring, MD   

Mentions for Peter S Winokur

Peter Winokur resumes & CV records

Resumes

Peter Winokur Photo 10

President And Founder

Location:
Rockville, MD
Industry:
Environmental Services
Work:
Defense Nuclear Facilities Safety Board Oct 2006 - Jan 2015
Chairman
Integrated Safety Solutions Oct 2006 - Jan 2015
President and Founder
National Nuclear Security Administration (Nnsa) Sep 2004 - Oct 2006
Senior Policy Analyst, Congressional Afairs
Office of Senator Harry Reid Jan 2001 - Sep 2004
Ieee Congressional Fellow
Sandia National Laboratories Dec 1983 - Jan 2001
Manager, Radiation Technology and Materials Division
Education:
University of Maryland 1971 - 1974
Doctorates, Doctor of Philosophy, Physics, Philosophy
University of Maryland 1968 - 1971
Masters, Physics
The Cooper Union For the Advancement of Science and Art 1964 - 1968
Bachelors, Bachelor of Science, Physics
Skills:
Energy, Analysis, Engineering, Proposal Writing, Program Management, Policy, Government, Strategic Planning, Project Management, Research, Nuclear, Project Planning, Renewable Energy, Energy Policy, Defense, Security Clearance, Leadership, Management, Systems Engineering, Policy Analysis, Analytical Skills
Peter Winokur Photo 11

Peter Winokur

Publications & IP owners

Us Patents

Screening Method For Selecting Semiconductor Substrates Having Defects Below A Predetermined Level In An Oxide Layer

US Patent:
5786231, Jul 28, 1998
Filed:
Dec 5, 1995
Appl. No.:
8/567679
Inventors:
William L. Warren - Albuquerque NM
Karel J. R. Vanheusden - Albuquerque NM
James R. Schwank - Albuquerque NM
Daniel M. Fleetwood - Albuquerque NM
Marty R. Shaneyfelt - Albuquerque NM
Peter S. Winokur - Albuquerque NM
Roderick A. B. Devine - St. Martin le Vinoux, FR
Assignee:
Sandia Corporation - Albuquerque NM
International Classification:
H01L 2166
G01R 3126
US Classification:
438 17
Abstract:
A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e. g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.

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