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Qi Xiao Tan Li, 52722 Muirfield Cir, Bowling Green, KY 42104

Known as:
Qi I Li Oi Li Li Oi
Related to:
Chang Lee Yinghua

Qi Li Phones & Addresses

722 Muirfield Cir, Bowling Green, KY 42104   

Newark, DE   

Wheeling, IL   

95 Fort Hill Ter, Rochester, NY 14620    585-2714069   

San Jose, CA   

Work

Company: The University of Chicago Medical Center Address: 5841 South Maryland Avenue, Chicago, IL 60637

Education

School / High School: Columbia

Languages

English

Ranks

Licence: New York - Currently registered Date: 2002
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Mentions for Qi Xiao Tan Li

Career records & work history

Lawyers & Attorneys

Qi Li Photo 1

Qi Adam Li - Lawyer

Address:
Jun He Law Offices
212-2086298 (Office)
Licenses:
New York - Currently registered 2002
Education:
Columbia

Medicine Doctors

Qi Li Photo 2

Dr. Qi Li, Chicago IL - MD (Doctor of Medicine)

Specialties:
Transplant Surgery
Address:
5841 S Maryland Ave Suite J-141, Chicago, IL 60637
773-8341279 (Phone)
Languages:
English
Hospitals:
5841 S Maryland Ave Suite J-141, Chicago, IL 60637
The University of Chicago Medical Center
5841 South Maryland Avenue, Chicago, IL 60637
Qi Li Photo 3

Qi Li

Specialties:
Transplant Surgery
Qi Li Photo 4

Qi Li, Chicago IL

Specialties:
Transplant Specialist
Address:
5841 S Maryland Ave, Chicago, IL 60637

Publications & IP owners

Us Patents

Music Feature Extraction Using Wavelet Coefficient Histograms

US Patent:
7091409, Aug 15, 2006
Filed:
Feb 13, 2004
Appl. No.:
10/777222
Inventors:
Tao Li - Rochester NY, US
Qi Li - Newark DE, US
Mitsunori Ogihara - Pittsford NY, US
Assignee:
University of Rochester - Rochester NY
International Classification:
G10H 7/00
US Classification:
84634, 84615
Abstract:
A music classification technique computes histograms of Daubechies wavelet coefficients at various frequency subbands with various resolutions. The coefficients are then used as an input to a machine learning technique to identify the genre and emotional content of music.

Method Of Making A Perovskite Layer At High Speed

US Patent:
2022023, Jul 28, 2022
Filed:
May 28, 2020
Appl. No.:
17/615142
Inventors:
- Rochester NY, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
International Classification:
H01L 51/00
C07F 7/24
Abstract:
A method of making a perovskite layer includes providing a flexible substrate; providing a perovskite solution comprising an initial amount of solvent and perovskite precursor materials and a total solids concentration between 30 percent and 70 percent by weight of its saturation concentration; depositing the perovskite solution on the substrate; removing a first portion of the solvent from the deposited perovskite solution and increasing the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration with a first drying step; and removing a second portion of the solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the first drying step dwell time is at least 5 times longer than the second drying step dwell time. A continuous inline method for production of photovoltaic devices at high speed, and a perovskite solution for use in making a uniform Perovskite layer at high speed to enable low cost production of high efficiency Perovskite devices are also described.

Inline Production Of Perovskite Devices

US Patent:
2020038, Dec 3, 2020
Filed:
May 30, 2019
Appl. No.:
16/426341
Inventors:
- Rochester NY, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
International Classification:
H01G 9/20
H01G 9/00
H01L 51/00
H01L 51/42
H01L 51/44
Abstract:
A continuous inline method for production of photovoltaic devices at high speed includes: providing a substrate; depositing a first carrier transport solution layer with a first carrier transport deposition device to form a first carrier transport layer on the substrate; depositing a Perovskite solution comprising solvent and perovskite precursor materials with a Perovskite solution deposition device on the first carrier transport layer; drying the deposited Perovskite solution to form a Perovskite absorber layer; and depositing a second carrier transport solution with a second carrier transport deposition device to form a second carrier transport layer on the Perovskite absorber layer, wherein the deposited Perovskite solution is dried at least partially with a fast drying device which causes a conversion reaction and the Perovskite solution to change in optical density by at least a factor of 2 in less than 0.5 seconds after the fast drying device first acts on the Perovskite solution.

Method Of Making A Perovskite Layer At High Speed

US Patent:
2020038, Dec 3, 2020
Filed:
May 30, 2019
Appl. No.:
16/426191
Inventors:
- Rochester NY, US
Qi Li - Rochester NY, US
Thomas Nathaniel Tombs - Rochester NY, US
Stephan J. DeLuca - Meadville PA, US
International Classification:
H01L 51/42
H01L 51/44
Abstract:
A method of making a perovskite layer includes providing a flexible substrate; providing a perovskite solution comprising an initial amount of solvent and perovskite precursor materials and a total solids concentration between 30 percent and 70 percent by weight of its saturation concentration; depositing the perovskite solution on the flexible substrate; removing a first portion of the solvent from the deposited perovskite solution and increasing the total solids concentration of the perovskite solution to at least 75 percent of its saturation concentration with a first drying step; and removing a second portion of the solvent from the deposited perovskite solution with a second drying step having a higher rate of solvent evaporation that causes saturation and a conversion reaction in the deposited perovskite solution resulting in perovskite crystal formation or formation of a perovskite intermediate phase, wherein the first drying step dwell time is at least 5 times longer than the second drying step dwell time.

Possible Relatives

Cynthia M Li  David Li  Dawei Li  Dayu W Li  De Li  Dean Li  Qi Lee  Qi D Lin  Qi Liu 

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