Rajeev Sachdev Bajaj, 501220 Franklin Ranch Rd, Goleta, CA 93117

6436302, Aug 20, 2002

Jan 27, 2000

09/492267

Fred C. Redeker - Fremont CA
Rajeev Bajaj - Fremont CA
Yutao Ma - Sunnyvale CA

Applied Materials, Inc. - Santa Clara CA

H01L 21463

216 38, 216 52, 216 53, 134 3, 134 7, 252 791, 438693, 510175

Cu metallization is treated to reduce defects and effect passivation, and to reduce leakage between lines, by removing surface defects subsequent to CMP and barrier layer removal. Embodiments include the sequential steps of: CMP and barrier layer removal; buffing with a solution comprising citric acid, ammonium hydroxide and deionized water to remove copper oxide; rinsing with deionized water or an inhibitor solution, e. g. , benzotriazole or 5-methyl triazole in deionized water; buffing with an abrasive slurry; and rinsing with deionized water or an inhibitor solution.

6436832, Aug 20, 2002

May 23, 2000

09/578157

Yutao Ma - Sunnyvale CA
Juilung Li - San Jose CA
Fred C. Redeker - Fremont CA
Rajeev Bajaj - Fremont CA

Applied Materials, Inc - Santa Clara CA

H01L 2100

438692, 134 2, 134 26, 216 38, 216 88, 216100, 438745, 438754

High through-put CMP is achieved by the application of a cleaning composition on to an exposed surface of a metal layer prior to polishing the bulk metal layer. Embodiments of the present invention include applying an aqueous composition containing citric acid and ammonium hydroxide in deionized water to remove a native oxide film that forms on a copper containing layer and then polishing the copper containing layer to substantially planarize the metal layer.

6506097, Jan 14, 2003

Jan 16, 2001

09/764733

Bret W. Adams - Sunnyvale CA
Boguslaw A. Swedek - San Jose CA
Rajeev Bajaj - Fremont CA
Savitha Nanjangud - San Jose CA
Andreas Norbert Wiswesser - Mountain View CA
Stan D. Tsai - Fremont CA
David A. Chan - Sunnyvale CA
Fred C. Redeker - Fremont CA
Manoocher Birang - Los Gatos CA

Applied Materials, Inc. - Santa Clara CA

B24B 100

451 5, 451 6, 451 9, 451 36, 451 57, 438692

An optical monitoring system for a two-step polishing process which generates a reflectance trace for each of plurality of radial zones. The CMP apparatus may switch from a high-selectivity slurry to a low-selectivity slurry when any of the reflectance traces indicate initial clearance of the metal layer, and polishing may halt when all of the reflectance traces indicate that oxide layer has been completely exposed.

6537144, Mar 25, 2003

Feb 17, 2000

09/505899

Stan D. Tsai - Fremont CA
Yuchun Wang - Cupertino CA
Kapila Wijekoon - Santa Clara CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Applied Materials, Inc. - Santa Clara CA

B24D 1100

451526, 451533, 451538, 451539

Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

6561873, May 13, 2003

Mar 8, 2002

10/093897

Stan D. Tsai - Fremont CA
Yuchun Wang - Cupertino CA
Kapila Wijekoon - Santa Clara CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA

Applied Materials, Inc. - Santa Clara CA

B24B 100

451 36, 451 41, 451533

Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

6602724, Aug 5, 2003

Jul 27, 2001

09/918591

Fred C. Redeker - Fremont CA
Rajeev Bajaj - Fremont CA

Applied Materials, Inc. - Santa Clara CA

H01L 2100

438 5, 438 7, 438 8, 438 10

A method of chemical mechanical polishing a metal layer on a substrate in which the substrate is polished at a first polishing rate. Polishing is monitored with an eddy current monitoring system, and the polishing rate is reduced to a second polishing rate when the eddy current monitoring system indicates that a predetermined thickness of the metal layer remains on the substrate. Then polishing is monitored with an optical monitoring system, and polishing is halted when the optical monitoring system indicates that an underlying layer is at least partially exposed.

6620027, Sep 16, 2003

Jan 9, 2002

10/044379

Ajoy Zutshi - Fremont CA
Rajeev Bajaj - Fremont CA
Fred C. Redeker - Fremont CA
Yutao Ma - Fremont CA
Kapila Wijekoon - Palto Alto CA

Applied Materials Inc. - Santa Clara CA

B24B 5100

451 5, 451 57, 451 37

Methods and apparatus for planarizing a substrate surface having copper containing materials thereon is provided. In one aspect, the invention provides a system for processing substrates comprising a first platen adapted for polishing a substrate with a hard polishing pad disposed on the first platen, a second platen adapted for polishing a substrate with a hard polishing pad disposed on the second platen, and a third platen adapted for polishing a substrate with a hard polishing pad disposed on the third platen. In another aspect, the invention provides a method for planarizing a substrate surface by the system described above including substantially removing bulk copper containing materials on the first platen, removing residual copper containing materials on the second platen, and then removing a barrier layer on the third platen. A computer readable program may also be provided for performing the methods described herein.

6629881, Oct 7, 2003

Feb 17, 2000

09/505902

Fred C. Redeker - Fremont CA
Rajeev Bajaj - Fremont CA
Frank A. Bose - Capetown, ZA
A. Jason Whitby - San Jose CA

Applied Materials, Inc. - Santa Clara CA

B24B 5700

451 60, 451 5, 451446

A fluid delivery apparatus and method for use in a chemical mechanical polishing system is provided. The delivery rate of a fluid onto a pad is controlled to reduce the consumption of the fluid. In general, the fluid flow may be varied between a relatively lower flow rate and a relatively higher flow rate or, alternatively, the flow may be periodically terminated. Fluid flow may be controlled by any combination of pumps, controllers, valves, or other regulator/fluid flow control member.